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Wideband quasi-reflectionless bandstop filters using open/shorted coupled lines

Published online by Cambridge University Press:  06 June 2023

Yijun Weng
Affiliation:
Guangdong Provincial Key Laboratory of Millimeter-Wave and Terahertz, South China University of Technology, Guangzhou, China
Wenjie Feng*
Affiliation:
Guangdong Provincial Key Laboratory of Millimeter-Wave and Terahertz, South China University of Technology, Guangzhou, China
Sha Xu*
Affiliation:
School of Integrated Circuits, Guangdong University of Technology, Guangzhou, China
Gaungxu Shen
Affiliation:
College of Electronic and Optical Engineering, Nanjing University of Posts and Telecommunications, Nanjing, China
Yongrong Shi
Affiliation:
Key Laboratory of Dynamic Cognitive System of Electromagnetic Spectrum Space, Ministry of Industry and Information Technology, Nanjing University of Aeronautics and Astronautics, Nanjing, China
Wenquan Che
Affiliation:
Guangdong Provincial Key Laboratory of Millimeter-Wave and Terahertz, South China University of Technology, Guangzhou, China
*
Corresponding author: Wenjie Feng; Email: fengwenjie1985@163.com; Sha Xu; sally.xu@gdut.edu.cn
Corresponding author: Wenjie Feng; Email: fengwenjie1985@163.com; Sha Xu; sally.xu@gdut.edu.cn
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Abstract

Two wideband bandstop filters (BSFs) for single and dual-band are proposed and then extended to reflectionless BSFs based on the analysis from input impedance/admittance perspective. Also, topologies of higher-number-stopband input-reflectionless BSF are provided to broaden the design scope. Open/shorted coupled lines are adopted to obtain multi transmission zeros and desired stopband bandwidth by adjusting the even-/odd-mode impedance of coupled lines. Resistor-loaded coupled lines are connected with Port 1 to absorb unwanted signals and obtain input-reflectionless behavior. For validation of the proposed theory analysis, BSFs with corresponding absorptive prototypes are constructed and measured.

Type
Filters
Copyright
© The Author(s), 2023. Published by Cambridge University Press in association with the European Microwave Association

Introduction

With the development of modern communication systems, there is an urgent need for bandstop filters (BSFs) to provide effective suppression of undesired frequency band signals in radio frequency/microwave front end. On the one hand, BSFs are responsible for rejecting unwanted powers in a certain frequency range, and a lot of research has been devoted to exploring novel practical structures of BSFs to meet the market’s demands [Reference Vanukuru and Velidi1Reference Lee, Lee, Lee and Lee12]. On the other hand, reflectionless/absorptive filters also play an important role in wireless systems compared to conventional filters, which may cause serious consequences to previous stages due to the inevitable reflection. It is gradually becoming a hot trend since reflectionless filter can provide superior performance without degrading the function of adjacent circuit components. Thus, scholars in recent years have paid much attention to investigating absorptive BSF (ABSF) using various methodologies. A miniaturized multiband ABSF is realized in literature [Reference Chang and Lin7] by replacing quarter-wavelength transmission lines with bridged T-coils and consequently reducing the circuit size. In [Reference Luo, Wong, Lin, Yang, Li, Yu, Feng, Tu and Zhu8], a single-port reflectionless bandpass filter composed of a bandpass filter shunted by BSF section is proposed first. Then after cascading N numbers of one-cell reflectionless bandpass filter, a high-order filtering response is realized such that higher stopband rejection (SR) levels will be realized as N increase. Narrow- and wideband reflectionless bandpass filters are reported in [Reference Feng, Ma, Shi, Shi and Che9], whose absorptive auxiliary channels are composed of a resistively terminated bypath transversal filtering architecture, and both attain input-reflectionless behavior as well as high-frequency signal preselection. In [Reference Lin, Huang and Jiang10], the authors demonstrate that the stepped-impedance short-circuited stub can be used for equalizing the passband insertion loss response, which is especially advantageous for cascaded ABSF design to realize higher SR or more stopbands. A balanced quasi-reflectionless bandpass filter is reported in [Reference Gómez-García, Muñoz-Ferreras, Feng and Psychogiou11], which makes use of complementary transfer function of Kth order BSF branches. In differential-mode operation, energy is absorbed by a loading resistor, while in common-mode operation, it maintains reflective-type nature. In addition, differential-mode selectivity and in-band common-mode suppression can be improved by increasing the order of branch. The work in [Reference Lee, Lee, Lee and Lee12] presents a new filtering power divider topology with all-port reflectionless response, which is realized by exploiting an admittance inverter into the sub-circuit. There are other works that are devoted to all-port reflectionless behavior with symmetric structure property as in [Reference Xu, Lu, Guo and Chen13, Reference Zhang, Wu, Yu and Wang14], by adding absorptive branches at both input and output ports to achieve bilateral quasi-reflectionless response or straightforwardly transform the BSF section into absorptive one, as in [Reference Gómez-García, Yang, Muñoz-Ferreras and Feng15].

In this paper, two BSFs including wideband and dual-band types have been introduced initially. Then, the corresponding ABSFs are provided with resistor-loaded coupled lines connected to Port 1 to absorb unwanted signals and achieve input quasi-reflectionless response. Also, topologies of higher-number-stopband-ABSF are given to broaden the design scope. The four structures are all made of simple configurations and are easy for practical implementation. Simulation and measurement results are verified for their abilities to reject undesired signals by four design prototypes centered at 2.2 GHz. Specifically, the proposed wideband and dual-band ABSFs perform high SR and wideband reflectionless bandwidth.

Analysis of the proposed BSFs

Proposed wideband BSF

The topology of the proposed wideband BSF illustrated in Fig. 1(a) is upgraded from traditional third-ordered BSF similar to the circuit model in [Reference Feng, Hong, Che and Xue3] by replacing two open stubs at ports with single-ended ground-coupled lines. Thus, wider bandwidth can be efficiently achieved without higher order.

Figure 1. The structure of the proposed BSFs: (a) wideband BSF and (b) dual-band BSF.

Based on the relationship between voltage and current of the coupled lines, Z parameters can be derived as in [Reference Jones16], and the expression of Z in versus Ze 1, Zo 1 and θ can be illustrated as

(1)\begin{equation}{Z_{{\textrm{in}}}} = j\,\left[ {{{{{\left( {{Z_e} - {Z_o}} \right)}^2}} \over {\left( {{Z_e} + {Z_o}} \right)}}\csc 2\theta - {{\left( {{Z_e} + {Z_o}} \right)} \over 2}\cot \theta } \right].\end{equation}

By imposing Z in = 0, the three transmission zeros (TZs) are derived as follows:

(2)\begin{equation}\theta \left( {{f_0}} \right)\, = \,{\pi \over 2},\quad {\theta _1}\left( {{f_1}} \right)\, = \,{\textrm{arc}}\cos {{{Z_e} - {Z_o}} \over {{Z_e} + {Z_o}}},\quad {\theta _2}\left( {{f_2}} \right) = \pi - {\theta _1}\left( {{f_1}} \right),\end{equation}

where f 0 represents the center frequency.

Obviously, the locations of TZs can be controlled by adjusting Ze and Zo of the coupled line and can further affect bandwidth as illustrated in Fig. 2(a). Trade-off exists that higher SR is attained when $k\,\left( {k = \left( {{Z_e} - {Z_o}} \right)/\left( {{Z_e} + {Z_o}} \right)} \right)$ gets lower at the expense of bandwidth. So, SR continuously rises as long as k declines, allowing flexible design for BSF of arbitrary bandwidth with wanted SR. Numerically, for the proposed wideband ABSF, 10-dB rejection level is accompanied by 0.67 of maximum fractional stopband bandwidth when k of coupled lines on two sides is 0.48.

Figure 2. Simulated results of BSFs: (a) wideband BSF and (b) dual-band BSF.

Proposed dual-band BSF

Built upon the structure of the proposed wideband BSF, the central open-circuited stub is substituted for single-ended ground-coupled lines as showed in Fig. 1(b). Through allocating different k for the central and two sides coupled lines, four TZs are realized and result in two stopbands. Similar to wideband BSF, their locations can be obtained by using (2) and controlled by adjusting Ze 1, Zo 1, Ze 2, and Zo 2. As shown in Fig. 2(b), the bandwidth gets wider as k 1 increases and differs from k 2, whereas SR decreases in this manner. Simulation results show that the 15-dB rejection level with 0.22/0.16 of maximum fractional bandwidth and the 10-dB rejection level with 0.23/0.17 of fractional bandwidth can be achieved when k 1 = 0.05 if k 2 is fixed at 0.30. In addition, 0.28 GHz of maximum frequency spacing between stopbands is obtained when the normalized center frequencies of two stopbands are 0.86 and 1.14 GHz, respectively.

Analysis of proposed ABSFs

To transform into absorptive filters, a lumped resistor is loaded at the end of the coupled lines at Port 1 of each BSFs to exhaust all the energy from input. Then, two ABSF topologies acquired are presented in Fig. 3 and can be analyzed from input impedance/admittance perspective.

Figure 3. Topologies of ABSFs: (a) wideband ABSF and (b) dual-band ABSF.

Proposed wideband ABSF

Except different absorptive branches from the ABSF in [Reference Xu, Lu, Guo and Chen13] and [Reference Zhu, Cai and Chen17], single-ended ground-coupled lines at Port 2 for the proposed wideband ABSF in Fig. 3(a) ensure overall three zero responses. Detailed theory analysis are as follows.

First, the input impedance Z T1 of T-section I can be extracted from ABCD matrix as

(3)\begin{equation}{\left[ \begin{matrix} A & B \\ C & D \end{matrix} \right]_{{\textrm{T}}1}} = \left[ \begin{matrix} {\cos \,2\theta - {{\sin }^2}\theta } & {j{Z_0}\left( {\sin 2\theta - \tan \theta {{\sin }^2}\theta } \right)} \\ {j1.5{Y_0}\,\sin 2\theta } & {\cos 2\theta - {{\sin }^2}\theta } \end{matrix} \right].\end{equation}
(4)\begin{equation}{Z_{{\textrm{T}}1}} = {Z_0}{{\cos 2\theta - {{\sin }^2}\theta + j\left( {\sin 2\theta - \tan \theta {{\sin }^2}\theta } \right)} \over {\cos 2\theta - {{\sin }^2}\theta + j1.5\,\sin \,2\theta }}\end{equation}

Based on (1), the input impedance Z in looking into the coupled lines shunted on Port 2 equals infinite at f 0 and assumes open-circuited. Then Z T1 of the Z 0-loaded T-section I equals infinite is required. Meanwhile, by extracting from Z matrix, the input admittance Y in1 can be depicted as

(5)\begin{equation}{Y_{{\textrm{in}}1}} = {{0.5R\left( {{Z_{e1}} + {Z_{o1}}} \right){{\csc }^2}\theta + j\left[ {{R^2} - {{\left( {{Z_{e1}} + {Z_{o1}}} \right)}^2}} \right]\cot \theta } \over {{{\left( {{Z_{e1}} + {Z_{o1}}} \right)}^3} + \left( {{Z_{e1}} + {Z_{o1}}} \right){R^2}{{\cot }^2}\theta }}.\end{equation}

To theoretically match Port 1 and dissipate unwanted signals, Y in1 should be equal to Y 0 and expression of R can be derived as

(6)\begin{equation}R = {Y_0}{\left( {{Z_{e1}} + {Z_{o1}}} \right)^2}{\sin ^2}\theta .\end{equation}

In contrast, input signals are all directly shorted to the ground at two resonant frequencies, and in-band reflection suppression is actualized so far.

For the wideband ABSF, design example with other parameters are provided in Table 1, comparison in Fig. 4(a) illustrates that return loss for different coupling coefficient kR of resistive terminated coupled lines vary especially within stopband. Under the same circumstances, reflection in-band reaches minimum when kR is around 0.25. As depicted in Fig. 4(b), curves of S 11 and S 21 indicate the value of R significantly affects in-band reflection of wideband ABSF. Note that a transmission pole is generated when R equals 288 Ω, which means perfect match for achieving reflectionless.

Figure 4. Simulated results of various values of (a) kR and (b) R for wideband ABSF.

Table 1. Circuit and layout parameter for each prototype

Extended from the proposed wideband ABSF, odd-number-stopband ABSF topology is illustrated in Fig. 5(a). It can obtain notch-filter response at center frequency, whereas every two coupled lines of similar coupling coefficients would attain two stopbands in symmetric distribution with regard to f 0.

Figure 5. Topologies of (a) (2N + 1)-band ABSF and (b) (2N)-band ABSF.

Proposed dual-band ABSF

For the dual-band ABSF in Fig. 3(b), by extracting from Z matrix, the input admittance Y in2 can be described as

(7a)\begin{equation}{Y_{{\textrm{in}}2}} = {{\left( {a + R} \right)\,\left[ {a\left( {a + R} \right) - {b^2}} \right]} \over {\left[ {a\left( {a + R} \right) - {d^2}} \right]\left[ {a\left( {a + R} \right) - {b^2}} \right] - {{\left[ {c\left( {a + R} \right) - bd} \right]}^2}}},\end{equation}

where

(7b)\begin{align}a & = - j0.5\left( {{Z_{e3}} + {Z_{o3}}} \right)\cot \theta , b = - j0.5\left( {{Z_{e3}} - {Z_{o3}}} \right)\cot \theta ,\nonumber \\ & c = - j0.5\left( {{Z_{e3}} - {Z_{o3}}} \right)\csc \theta ,\,d = - j0.5\left( {{Z_{e3}} + {Z_{o3}}} \right)\csc \theta .\end{align}

At f 0, the input admittance Y in2 equals zero and the input impedance Z in of coupled lines shunted on Port 2 equals infinite by using equation (6) and (1), respectively. So, both assumed to be open-circuited. Next, the input impedance Z T2 of Z 0-loaded T-section II can be extracted from ABCD matrix as below:

(8)\begin{equation}{\left[ \begin{matrix} A & B \\ C & D \end{matrix} \right]_{{\textrm{T}}2}} = \left[ \begin{matrix} {\cos \,2\theta + j{{{Z_0}} \over {2{Z_{{\textrm{in}}}}}}\sin 2\theta } & { - {{Z_0^2} \over {{Z_{{\textrm{in}}}}}}\left( {{{\sin }^2}\theta + j{Z_0}\,\sin 2\theta } \right)} \\ {{{{{\cos }^2}\theta } \over {{Z_{{\textrm{in}}}}}} + j{Y_0}\,\sin 2\theta } & {\cos 2\theta + j{{{Z_0}} \over {2{Z_{{\textrm{in}}}}}}\sin 2\theta } \end{matrix} \right],\end{equation}
(9)\begin{equation}{Z_{{\textrm{T}}2}} = {Z_0}{{\cos \,2\theta - {{{Z_0}} \over {{Z_{{\textrm{in}}}}}}{{\sin }^2}\theta + j\left( {\sin \,2\theta + {{{Z_0}} \over {2{Z_{{\textrm{in}}}}}}\sin 2\theta } \right)} \over {\cos \,2\theta + {{{Z_0}} \over {{Z_{{\textrm{in}}}}}}{{\cos }^2}\theta + j\left( {\sin \,2\theta + {{{Z_0}} \over {2{Z_{{\textrm{in}}}}}}\sin 2\theta } \right)}},\end{equation}
where Z in is denoted in (1).

To ensure all the powers are transmitted to output at f 0, Z T2 = Z 0 should be satisfied. Otherwise, input signals are all directly shorted to the ground at four resonant frequencies and ultimately annihilate reflection. For the dual-band ABSF design example, Fig. 6(a) shows the out-band response with different coupling coefficient kR and resistive terminated coupled lines. Considering in-band reflection suppression and maintaining symmetry of waveform, it is desired to set kR around 0.25. Results in Fig. 6(b) reveal that reflection is suppressed drastically in two stopbands with subtle change of SR. When R nears 260, two quasi-poles appear and perform high match level.

Figure 6. Simulated results of various values of (a) kR and (b) R for dual-band ABSF.

Even-number-stopband ABSF topology as in Fig. 5(b), which is developed from the proposed dual-band ABSF, also exploits every two coupled lines of similar coupling coefficients to attain two stopbands in symmetric distribution around f 0. What’s more, as described in Fig. 6, kR and R both have an influence on insertion loss within the passband range between stopbands. The phenomenon can be attributed to the absorptive branch, which is merely quasi-complementary to the BSF section over the entire passband, thus, affects power matching.

To further reduce reflection within passband, extension to higher order is a helpful way as employed in [Reference Gómez-García, Muñoz-Ferreras, Feng and Psychogiou11] that arbitrary order can be realized by increasing number of poles. For the proposed wideband ABSF, higher-order topology can be achieved through increasing open-circuited lines with different impedance as depicted in Fig. 7(a). Theoretical examples of the proposed higher-order wideband ABSF and corresponding responses are given as in Fig. 7(b). It reveals deeper suppression level and better selectivity since steeper slopes and sharper stopband skirts are obtained by extending to higher order. Besides, note that the number of poles in passbands grows and reflection near stopbands becomes lower as order increases, exhibiting different power matching level.

Figure 7. (a) Topology of the Nth-order wideband ABSF and (b) theoretical power transmission and reflection responses of first-, second-, and third-order design examples for the proposed Nth-order wideband ABSF (N = 1: Z 1 = Z 0; N = 2: Z 1 = Z 0, Z 2 = 1.4Z 0; N = 3: Z 1 = Z 0, Z 2 = 1.4Z 0, Z 3 = 1.8Z 0).

Based on the above analysis, the procedure of designing proposed input-reflectionless ABSFs can be concluded as follow:

  1. 1. select center frequency f 0 and decide demand bandwidth;

  2. 2. choose proper even-/odd-mode impedance of each coupled lines and impedance of the rest lines to form BSFs;

  3. 3. further extend to corresponding ABSFs based on the theory derivation in above section;

  4. 4. obtain relevant dimensions and realize physically using microstrip lines; and

  5. 5. conduct simulations and then carry out optimizations for final layouts.

Simulation and experimental results

To demonstrate the analysis method mentioned in the sections “Analysis of proposed BSFs” and “Analysis of proposed ABSFs”, two pairs of BSFs operating at 2.2 GHz are fabricated on the substrate with dielectric constant ε r = 2.65, loss tangent tanδ = 0.003, substrate thickness h = 0.508 mm, as shown in Fig. 8. The reference impedance Z o of Port 1 and Port 2 are set to 50 Ω.

Figure 8. Layout of the proposed bandstop filters: (a) wideband BSF, (b) dual-band BSF, (c) wideband ABSF, and (d) dual-band ABSF.

For the proposed wideband BSF, within the frequency band from 1.89 to 2.58 GHz and 31% for the fractional bandwidth, the measured insertion loss is larger than 21 dB, as shown in Fig. 9(a). The maximum group delay within passband is 0.99 ns. For the proposed dual-bandbandstop filter, Fig. 9(b) shows higher SR that 35-dB insertion loss ranged from 1.82 to 1.94 GHz, and 2.57–2.69 GHz is achieved with 58.1% for the fractional bandwidth. Enhanced return loss is accompanied by other deteriorated properties that higher insertion loss over passband and lower reflection suppression on two sides may weaken its frequency selectivity. The maximum out-band group delay is 0.94 ns.

Figure 9. Photographs, simulated, and measured results of the BSFs: (a) wideband BSF and (b) dual-band BSF.

Measured results in Fig. 10(a) indicate that S 11 of the proposed wideband ABSF below −10 dB is from 1.02 to 2.71 GHz; 10-dB inferred input-reflectionless bandwidth is 1.69 GHz, whereas SR is over 22 dB. Three TZs fall on 1.98, 2.22, and 2.56 GHz, respectively. The maximum group delay is 0.99 ns. In Fig. 10(b), measured S 11 of the proposed dual-band ABSF below −10 dB is from 1.64 to 2.67 GHz and results in 1.03 GHz of 10-dB inferred input-reflectionless bandwidth, whereas reflection remains lower than −10 dB at upper passband. The measured SR is better than 31 dB from 1.77 to 1.94 GHz for the first stopband, and it is from 2.56 to 2.7 GHz for the second stopband. The minimum in-band insertion loss is as low as 31 dB with four TZs located at 1.8, 1.92, 2.58, and 2.68 GHz, respectively. What’s more, the maximum group delay is 0.93 ns.

Figure 10. Photographs, simulated, and measured results of the ABSFs: (a) wideband ABSF and (b) dual-band ABSF.

To further show the advantages of the two types of ABSFs, Tables 2 and 3 shows the measurement result comparisons between different works. Compared with other wideband and dual-band ABSFs, the proposed ABFSs have advantages of wider absorptive bandwidth, more TZs, and simpler circuit structure.

Table 2. Comparisons of recent studies on the wideband ABSFs

Estimated from graph.

Table 3. Comparisons of recent studies on the dual-band ABSFs

Estimated from graph.

Conclusion

In this paper, two structures of BSFs have been introduced and then extended to input-reflectionless ABSFs by rigorous analysis. To explain how to achieve no reflection, this paper intends to elaborate on theoretical derivation and results analysis. By flexibly exploiting the input impedance/admittance of each unit at a certain frequency, ideal response can be realized. Complete design procedure of ABSF is given in the section “Analysis of proposed ABSFs”. The proposed structures all possess simple configurations and are easy for practical implementation. Two examples of the proposed BSFs and corresponding absorptive prototypes operating at 2.2 GHz are constructed and measured.

Funding Statement

This work is supported by the National Natural Science Foundation of China (62231014, 61931009, and 61971387), Natural Science Foundation of Jiangsu Province for Youth (grant BK20200742), Guangdong Innovative and Entrepreneurial Research Team Program (no. 2017ZT07X032), Industry-university-research Cooperation Fund of the Shanghai Academy of Spaceflight Technology (SAST2021-009), the Fundamental Research Funds for the Central Universities and TCL science and technology innovation fund.

Competing interests

The authors report no conflict of interest.

Yijun Weng was born in Shangrao, Jiangxi, China, in 1999. She received the B.Sc. degree from Changan University, Xian, China, in 2021. She is currently pursuing M.S. degree and Ph.D. degree in microwave technique at the South China University of Technology, Guangzhou. Her current research interests include wideband circuits and technologies, microwave and millimeter-wave circuits and components.

Wenjie Feng was born in Shangqiu, Henan, China, in 1985. He received the B.Sc. degree from the First Aeronautic College of the Airforce, Xinyang, China, in 2008 and the M.Sc. and Ph.D. degrees from the Nanjing University of Science and Technology (NUST), Nanjing, China, in 2010 and 2013, respectively. From July 2017 to September 2017, he was a Research Fellow with the City University of Hong Kong. From October 2010 to March 2011, he was an Exchange Student with the Institute of High Frequency Engineering, Technische Universität München, Munich, Germany. He is currently a Professor with South China University of Technology, Guangzhou, China. He has authored or coauthored over 100 IEEE journal articles (including 70 IEEE TRANSACTIONS papers) and 80 conference papers. His research interests include wideband circuits and technologies, microwave and millimeter-wave circuits and components, circuits interconnection, and packaging. Dr. Feng was a recipient of the National Science Fund for Excellent Young Scholars in 2018, the Young Scientist Award of ACES-China 2018, and a reviewer for over 20 internationally refereed journals and conferences. He currently serves as an Associate Editor for IET Microwaves, Antennas & Propagation, IET Electronics Letters, and International Journal of Electronics.

Sha Xu is with School of Integrated Circuits, Guangdong University of Technology, China. She received her undergraduate degree from Huazhong University of Science and Technology in 2010 and Ph.D. degree from City University of Hong Kong in 2014, then worked as an engineer in Hong Kong Applied Science and Technology Research Institute, and joined Guangdong University of Technology in September 2018. Her research interests include Antenna in Package (AiP), advanced packaging, high-density substrate technology, reliability and failure analysis, etc. She has published more than 20 papers in international journals and conferences.

Guangxu Shen received the B.S., M.S., and Ph.D. degrees from Nanjing University of Science and Technology (NUST), Nanjing, China, in 2014, 2016, and 2019, respectively. From February 2014 to May 2014, he was an Exchange Student with the Institute of Nano-Electronics, Technische Universität München (TUM), Munich, Germany. From May 2017 to May 2018, he was a Research Assistant with the City University of Hong Kong (CityU). He is currently a Lecturer with Nanjing University of Posts and Telecommunications (NJUPT). He has authored or co-authored over 40 internationally refereed journal and conference papers, including over 15 Transaction papers. His research interests include microwave/millimeter-wave integrated passive circuits, millimeter-wave switches, and front-end modules. Dr. Shen was a recipient of the First Runner Up of 2017 Student Paper Competition in IEEE HK AP/MTT Postgraduate Conference, October 2017. He serves as a Reviewer for several IEEE Transactions and Letter. He served as a TPC member or session chair for various conferences.

Yongrong Shi was born in Taizhou, Jiangsu Province, China. He received the B.S. degree and Ph.D. degree from Nanjing University of Science and Technology, Nanjing, China, in 2010 and 2015, respectively. He is currently a full professor with the Nanjing University of Aeronautics and Astronautics. From 2015 to 2019, he was a senior engineer with the Nanjing electronic devices institute, where he is a recipient of the best new employee award. He has authored or coauthored over 60 journal papers and conference papers (including 25 IEEE Transactions papers). His current research interests include gap waveguide and its application in the millimeter-wave front-end system on package by mixed substrate technology, W-band frequency-modulated continuous wave (FMCW) radar, and spectrum detection. Dr. Shi has served as the technical reviewer for the several IEEE Transactions, Letters, and Magazines.

Wenquan Che received the B.Sc. degree from the East China Institute of Science and Technology, Nanjing, China, in 1990, the M.Sc. degree from the Nanjing University of Science and Technology (NUST), Nanjing, China, in 1995, and the Ph.D. degree from the City University of Hong Kong (CITYU), Kowloon, Hong Kong, in 2003. In 1999, she was a Research Assistant with the City University of Hong Kong. From March 2002 to September 2002, she was a Visiting Scholar with the Polytechnique de Montréal, Montréal, QC, Canada. She is currently a Professor with the South China University of Technology, Guangzhou, China. From 2007 to 2008, she conducted academic research with the Institute of High Frequency Technology, Technische Universität München. During the summers of 2005–2006 and 2009–2012, she was with the City University of Hog Kong, as Research Fellow and Visiting Professor. She has authored or coauthored over 300 internationally referred journal papers and international conference papers. Her research interests include electromagnetic computation, planar/coplanar circuits and subsystems in RF/microwave frequency, microwave monolithic integrated circuits (MMICs), and medical application of microwave technology. Dr. Che is a member of the IEEE Microwave Theory and Techniques Society (IEEE MTT-S) Administrative Committee (AdCom) for 2018–2023, and she is a reviewer for the IEEE Transactions on Microwave Theory and Techniques, IEEE Transactions on Antennas and Propagation, IEEE Transactions on Industrial Electronics, and IEEE Microwave and Wireless Components Letters. She was the recipient of the 2007 Humboldt Research Fellowship presented by the Alexander von Humboldt Foundation of Germany, the 5th China Young Female Scientists Award in 2008, and the recipient of Distinguished Young Scientist awarded by the National Natural Science Foundation Committee (NSFC) of China in 2012.

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Figure 0

Figure 1. The structure of the proposed BSFs: (a) wideband BSF and (b) dual-band BSF.

Figure 1

Figure 2. Simulated results of BSFs: (a) wideband BSF and (b) dual-band BSF.

Figure 2

Figure 3. Topologies of ABSFs: (a) wideband ABSF and (b) dual-band ABSF.

Figure 3

Figure 4. Simulated results of various values of (a) kR and (b) R for wideband ABSF.

Figure 4

Table 1. Circuit and layout parameter for each prototype

Figure 5

Figure 5. Topologies of (a) (2N + 1)-band ABSF and (b) (2N)-band ABSF.

Figure 6

Figure 6. Simulated results of various values of (a) kR and (b) R for dual-band ABSF.

Figure 7

Figure 7. (a) Topology of the Nth-order wideband ABSF and (b) theoretical power transmission and reflection responses of first-, second-, and third-order design examples for the proposed Nth-order wideband ABSF (N = 1: Z1 = Z0; N = 2: Z1 = Z0, Z2 = 1.4Z0; N = 3: Z1 = Z0, Z2 = 1.4Z0, Z3 = 1.8Z0).

Figure 8

Figure 8. Layout of the proposed bandstop filters: (a) wideband BSF, (b) dual-band BSF, (c) wideband ABSF, and (d) dual-band ABSF.

Figure 9

Figure 9. Photographs, simulated, and measured results of the BSFs: (a) wideband BSF and (b) dual-band BSF.

Figure 10

Figure 10. Photographs, simulated, and measured results of the ABSFs: (a) wideband ABSF and (b) dual-band ABSF.

Figure 11

Table 2. Comparisons of recent studies on the wideband ABSFs

Figure 12

Table 3. Comparisons of recent studies on the dual-band ABSFs