Two dimensional (2D) nanomaterials such as graphene and transition-metal dichalcogenides (TMDCs) have attracted tremendous attention over recent years due to their unique properties and potential for numerous applications. Given the wide range of compositions of 2D-layered materials that have emerged in recent years, it is not surprising that they offer a rich spectrum of properties, ranging from metallic, insulating, superconducting to semiconducting. Here we report on the solution-based production of 2D layered material flakes, in particular graphene and MoS2 where the materials are chemically exfoliated in organic solvents which can then be ink jet printed using a commercially available material printer, for printed electronics applications.

We studied MOCVD processing for direct growth of BN on 2” sapphire substrates as a template for heterostructures with two dimensional (2D) and three dimensional (3D) materials. The combined experimental evidence points to three growth modes for BN: self-terminating, 3D random, and layer-by-layer, all of which are dependent on V/III ratio, temperature, pressure, and substrate surface modification via nitridation. At moderate temperature (950-1050°C), BN growth using high V/III ratio is self-terminating, resulting in c-oriented films aligned in-plane with respect to the orientation of the sapphire substrate. BN films grown under low V/III ratios are 3D, randomly oriented, and nano-crystalline. At higher temperature (1100°C), self-terminating growth transitions to a continuous layer-by-layer growth mode. When BN growth is self-terminating, films exhibit atomically smooth surface morphology and highly uniform thickness over a 2” sapphire wafer. Using these BN/sapphire templates we studied the growth of 2D and 2D/3D heterostructures. To study direct growth of 2D on 2D layered material we deposited graphene on BN in a continued process within the same MOCVD system. Furthermore, we explore the growth and nucleation of 3D materials (GaN and AlN) on BN. AlGaN/GaN based high electron mobility transistor (HEMT) structures grown on BN/sapphire exhibited two-dimensional electron gas characteristics at the AlGaN/GaN heterointerface, with room-temperature electron mobility and sheet electron density about 1900cm2/Vs and 1x1013cm-2, respectively.

Black phosphorus (black-P) research has been the most absent for 100 years since its date of first synthesis in 1914 among all the polymorphs of phosphorus. However, recently it has been re-examined due to its specific puckered single layer geometry. Few or single atomic layer forms of black-P can be isolated using techniques such as micromechanical or liquid exfoliation. However, the exfoliation techniques limit the use of black-P, hence a method of black-P layer deposition onto a substrate is needed. Few or atomic layer deposition of black-P leads to substrate-material interactions and a possible appearance of a band gap opening at the K point. Hence, a series of experiments were conducted in order to grow black-P on different substrates. With the incorporation of doping elements, there was substantial modification in the vibrational and electrical properties. It was observed that sulfur and boron doped films exhibit improved electrical and electronic properties as compared to pristine black-P. Density functional theory predicts significant changes in the band structure and density of states as a consequence of doping. The effects of doping was also reflected in Raman A1g mode. The shift in peak position was also found to be consistent with molar mass of dopants.

Since the isolation of graphene, a monolayer of sp2-bonded carbon atoms arranged in a hexagonal lattice, two-dimensional (2D) layered materials have attracted a great deal of attention due to their outstanding mechanical, optical and electronic properties. The research areas of interest for these new materials include exploring their novel properties, developing scalable approaches to synthesize these materials, and integrating them into a new generation of nanodevices. The utilization of 2D materials in devices has many advantages, which includes scaled materials to the limit of atomic-scale membranes, and the potential to form device structures on flexible and transparent substrates, among others. Transition metal dichalcogenides (TMDs) monolayers in particular, have received increasing attention in recent years, especially molybdenum disulfide (MoS2), which is one of the most well explored semiconducting materials in the 2D materials system. In this work we present the synthesis of MoS2 using chemical vapor deposition (CVD), where we have varied the synthesis parameters and compared the structure and quality of the CVD synthesized MoS2. At the same time, we have compared the characteristics with those obtained for mechanically exfoliated flakes from the bulk MoS2 crystal. The MoS2 quality has been analyzed using Raman spectroscopy.

We have used reverse nonequlibrium molecular dynamics modeling to study the impact of uniaxial stretching on the thermal conductivity of monolayer molybdenum disulfide (MoS2) and hexagonal boron nitride (h-BN). Our results predict an anomalous response of the thermal conductivity of these materials to normal strain. Thermal conductivity of h-BN increases under a tensile strain whereas thermal conductivity of MoS2 remains fairly constant. These are in striking contrast to the impact of tensile strain on the thermal conductivity of three dimensional materials whose thermal conductivity decreases under tensile strain. We investigate the mechanism responsible for this unexpected behavior by studying the impact of tensile strain on the phonon dispersion curves and group velocities of these materials.

In this work, we have explored the prospects of MoS2 and WS2, both of which are semiconducting 2D materials, for potential composite applications. In order to form 2D materials composites we have to first disperse them chemically in solution. MoS2 and WS2 powders were oversaturated in N-Methyl-2-pyrrolidone (NMP) solution at 37.5 mg/mL and sonicated at room temperature (RT) for sonication times ranging from 30 minutes to close to 24 hours. After solution processing, the samples with the 2D flakes were transferred to an Isopropyl Alcohol (IPA) bath for particle size distribution analysis. We have observed significant changes in particle size distribution spanning two orders of magnitude as a function of the sonication conditions. Specifically, the observed changes in particle size distribution for MoS2 and WS2 powders ranged from 44 microns down to 0.409 microns, and 148 microns down to 0.409, respectively, as compared to the untreated materials. Structural analysis was conducted using the SEM and X-Ray diffraction. The structural analysis using the SEM revealed morphological signatures between the two materials, where the MoS2 flakes had a randomly oriented distribution with occasional triangular flakes. In the case of the WS2, regardless of the sonication conditions, the WS2 flakes seemed to have a characteristic 120° angular distribution at the vertices, representing a rhombus with concave edges. The XRD analysis showed a minute shift in the characteristic peaks that maybe due to strain-induced effects as a result of the solution processing. Optical characterization of the materials was also conducted using Raman Spectroscopy to validate the average layer number resulting from the solution dispersions and the spatial and compositional uniformity of the two material samples.