Skip to main content Accessibility help

We use cookies to distinguish you from other users and to provide you with a better experience on our websites. Close this message to accept cookies or find out how to manage your cookie settings.

Close cookie message
×
  1. Home
  2. Search

Refine search

Refine search

Access:
Content type:
Publication date:
Apply   From and To filters
Subject: Show more
Journals Show more
Publishers: Show more
Societies Show more
Series: Show more
Collections: Show more

Actions for selected content:

Select all | Deselect all
  • View selected items
  • Export citations
  • Download PDF (zip)
  • Save to Kindle
  • Save to Dropbox
  • Save to Google Drive

Save Search

You can save your searches here and later view and run them again in "My saved searches".

Please provide a title, maximum of 40 characters.
Cancel
×

1 results

  • Preparation of Sapphire for High Quality III-Nitride Growth

  • J. Cui, A. Sun, M. Reshichkov, F. Yun, A. Baski, H. Morkoç
  • Journal:
    Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 5 / Issue 1 / 2000
    Published online by Cambridge University Press:
    13 June 2014, e7
    Print publication:
    2000
    • Article
      • You have access
    • PDF
    • HTML
    • Export citation

  • We developed a unique preparation technique to eliminate surface damage on the c-plane of sapphire and render it atomically flat. AFM images of c-plane sapphire annealed at 1380 °C for 1hour show terrace-like features with about 0.2 μm long terraces. The GaN layers grown by MBE on annealed sapphire have [0 0 2] symmetric and [1 0 4] asymmetric full width at half maximum (FWHM) of about 60 and 132 arcsec, respectively. This compares with 408 and 600 arcsec, respectively, for GaN grown on sapphire having gone through conventional chemical cleaning.