The authors summarize the results of selective-area growth of vertical MnAs/InAs heterojunction nanowire (NW) arrays and present a preliminary characterization of the transport properties of a single MnAs/InAs heterojunction NW and a single InAs host NW for MnAs inclusions. During the endotaxy of MnAs after the selective-area growth of host InAs nanowires (NWs) on partially SiO2-masked GaAs(111)B substrates, hexagonal NiAs-type MnAs nanoclusters (NCs), which exhibit spontaneous magnetization at room temperature, are formed with the 〈0001〉 direction oriented parallel to the 〈111〉B direction of the zinc-blende-type InAs host NWs. For InAs host NWs, a large positive ordinary magnetoresistance (MR) effect up to 165% is observed at temperatures between 7 and 280 K. In addition, magnetotransport measurements reveal universal conductance fluctuations and a weak Anderson localization at temperatures up to 20 K due to a charge-accumulation layer formed at the surface. Single MnAs/InAs heterojunction NWs, however, exhibit only a negative MR effect, which is independent of temperature T < 10 K and linearly decreases up to −10% at 10 T with increasing magnetic field. These results reveal the tremendous influence of ferromagnetic NCs on the transport behavior inside the InAs host NWs.

Theoretical calculations and experimental observations show MoTe2 is a type II Weyl semimetal, along with many members of transition metal dichalcogenides family. We have grown highly crystalline large-area MoTe2 thin films on Si/SiO2 substrates by chemical vapor deposition. Very uniform, continuous, and smooth films were obtained as confirmed by scanning electron microscopy and atomic force microscopy analyses. Measurements of the temperature dependence of longitudinal resistivity and current–voltage characteristics at different temperature are discussed. Unsaturated, positive quadratic magnetoresistance of the as-grown thin films has been observed from 10 to 200 K. Hall resistivity measurements confirm the majority charge carriers are hole.

We examined the influence of the microwave power on the diagonal resistance in the GaAs/AlGaAs two dimensional electron system (2DES), in order to extract the electron temperature and determine microwave induced heating as a function of the microwave power. The study shows that microwaves produce a small discernable increase in the electron temperature both at null magnetic field and at finite magnetic fields in the GaAs/AlGaAs 2DES. The heating effect at null field appears greater in comparison to the examined finite field interval, although the increase in the electron temperature in the zero-field limit appears smaller than theoretical predictions.

Nonvolatile memories (NVMs) are key devices in computers to save a user’s information. Besides flash memory, several types of NVMs that use magnetoresistance, resistance change of metal oxides, and phase change of chalcogenide alloys have been studied. Among these, phase-change random-access memory (PC-RAM) is competitive from the viewpoint of switching speed, high durability, and scalability. In 2017, Intel and Micron Technology shipped commercial devices named Optane that use a phase-change material as storage class memories. Condensed-matter physicists have recently been attracted to phase-change materials because of their functionality as topological insulators. If the topological phase state is controllable and applied to PC-RAM, electron spin transfer and storage effects will be further available in addition to electrical resistance switching.

Ca3Co4O9 (CCO) is a promising material for thermoelectric applications; however, this layered oxide shows a large number of physical features that complicate understanding and systematically improving its properties. A significant component of CCO’s behavior is its magnetotransport properties, particularly in the low temperature region where an incommensurate spin density wave affects its band structure. In order to improve understanding in this area, we perform low temperature magnetoresistance (MR) measurements on a bulk CCO sample. Field-less resistivity measurements confirm the conventional behavior of our sample, with a metal-to-insulator transition at approximately 70 K, and a shoulder indicating ferrimagnetism at 14 K. Resistivity vs. temperature under applied magnetic field show significant MR below around 35 K.

The oxide interface SrTiO3/LaAlO3 supports a 2D electron liquid displaying superconductivity and magnetism, while allowing for a continuous control of the electron density using a gate. Our recent measurements have shown a similar surprising nonmonotonic behavior as function of the gate voltage (carrier density) of three quantities: the superconducting critical temperature and field, the inverse Hall coefficient, and the frequency of quantum oscillations. While the total density has to be monotonic as function of gate, the last result indicates that one of the involved bands has a nonmontonic occupancy as function of the chemical potential. We show how electronic interactions can lead to such an effect, by creating a competition between the involved bands and making their sturcture non-rigid, and thus account for all these effects. Adding Fock terms to our previous Hartree treatment makes this scenario even more generic.

2D materials play a special role in the race to make smaller and smaller devices. Their unique and strong in-plane bonding makes them impervious to diffusion into other layers and provides excellent thickness control. Their van der Waal's bonding with other monolayers or substrates allows for heterostructures unattainable by any other technique. This is reflected by the abundant popularity of research into graphene and other 2D materials. In this review article, we will describe the out-of-plane properties of graphene and functionalized graphene. We will use three specific examples to illustrate how these out-of-plane properties can be used in spintronic devices, in section “Graphene as a Tunnel Barrier” we will describe a magnetic tunnel junction (MTJ) based on graphene. Section “Graphene Based MTJs” will describe the spin injecting properties of a graphene tunnel barrier on silicon. Section “Graphene in Semiconductor Spintronic Devices” describes how you can use functionalized graphene to make a homoepitaxial graphene device. The second part of this article reviews monolayer transition-metal dichalcogenides (TMDs). First, we will show how TMDs are grown and specifically how we can grow large-area TMDs by chemical vapor deposition. Secondly, we will describe the optical properties of several TMDs and compare the results from several authors. Finally, we choose a chemical sensor as a specific example to show how TMDs can be used in a device.

We have investigated the transport properties of topological insulator based on single-crystal Bi0.83Sb0.17 nanowires. The single-crystal nanowire samples in the diameter range 200 nm – 1.1 μm were prepared by the high frequency liquid phase casting in a glass capillary using an improved Ulitovsky technique; they were cylindrical single-crystals with (1011) orientation along the wire axis. In this orientation, the wire axis makes an angle of 19.5o with the bisector axis C1 in the bisector-trigonal plane. Bi0.83Sb0.17 is a narrow gap semiconductor with energy gap at L point of Brillouin zone ΔE= 21 meV. In accordance with the measurements of the temperature dependence of the resistivity of the samples resistance increases with decreasing temperature, but at low temperatures decrease in the resistance is observed. This effect, decrease in the resistance, is a clear manifestation of the interesting properties of topological insulators - the presence on its surface of a highly conducting zone. The Arrhenius plot of resistance R in samples with diameter d=1.1 µm and d=200 nm indicates a thermal activation behavior with an activation gap ΔE= 21 and 35 meV, respectively, which proves the presence of the quantum size effect in these samples. We found that in the range of diameter 1100 nm - 200 nm when the diameter decreases the energy gap is growing as 1/d. We have investigated magnetoresistance of Bi0.83Sb0.17 nanowires at various magnetic field orientations. From the temperature dependences of Shubnikov de Haas oscillation amplitude for different orientation of magnetic field we have calculated the cyclotron mass mc and Dingle temperature TD for longitudinal and transverse (B||C3 and B||C2) directions of magnetic fields, which equal 1.96*10-2m0, 9.8 K, 8.5*10-3m0 , 9.4 K and 1.5*10-1m0 , 2.8 K respectively. The observed effects are discussed.

A number of studies have suggested that molecular materials could offer similar performance as, or even potentially supersede, those of inorganic materials in spintronics devices. Radically new spintronics functionalities, unavailable with conventional inorganic materials, could stem from the interface between ferromagnetic (FM) and molecular materials, giving rise to the so-called “spinterface” field. In this article, we review the fundamental concepts, recent experiments, and perspectives in this fast rising field, where the functionality is brought from the bulk to the ultimate downscaled device: the interface. The article shows how spin-dependent hybridization at the FM metal/molecule interface can lead to induced spin polarization in the molecular orbitals thanks to spin-dependent broadening and energy shifting of the molecular levels. Interfacial spin polarization can then be tailored thanks to chemical interactions. Examples of enhancement and reversal are given, and we highlight how this spin-dependent hybridization opens a new door for the spintronics crafting of multifunctionality through chemical designing and tuning on the molecular scale.

Organic materials provide a unique platform for exploiting the spin of the electron—a field dubbed organic spintronics. Originally, this was mostly motivated by the notion that because of weak spin-orbit coupling, due to the small mass elements in organics and small hyperfine field coupling, organic matter typically displays a very long electron spin coherence time. More recently, however, it was found that organics provide a special class of spintronic materials for many other reasons—several of which are discussed throughout this issue. Over the past decade, there has been a growing interest in utilizing the molecular spin state as a quantum of information, aiming to develop multifunctional molecular spintronics for memory, sensing, and logic applications. The aim of this issue is to stimulate the interest of researchers by bringing to their attention the vast possibilities not only for unexpected science but also for the enormous potential for developing new functionalities and applications. The six articles in this issue deal with some of the breakthrough work that has been ongoing in this field in recent years.

Organic molecules adsorbed on magnetic surfaces offer the possibility to merge the concepts of molecular electronics with spintronics to build future nanoscale data storage, sensing, and computing multifunctional devices. In order to engineer the functionalities of such hybrid spintronic devices, an understanding of the electronic and magnetic properties of the interface between carbon-based aromatic materials and magnetic surfaces is essential. In this article, we discuss recent progress in the study of spin-dependent chemistry and physics associated with the above molecule-ferromagnet interface by combining state-of-the-art experiments and theoretical calculations. The magnetic properties such as molecular magnetic moment, electronic interface spin-polarization, magnetic anisotropy, and magnetic exchange coupling can be specifically tuned by an appropriate choice of the organic material and the magnetic substrate. These reports suggest a gradual shift in research toward an emerging subfield of interface-assisted molecular spintronics.

The effects of a magnetic field on the current in sandwich devices of a nonmagnetic material in-between two ferromagnetic electrodes are well known. However, magnetic-field effects also occur in the responses of devices of organic semiconductors sandwiched in-between non-ferromagnetic electrodes, providing an entirely new route toward organic spintronics. The precise origins of these “intrinsic” magnetic field effects are still unclear. They appear to be related to spin-selective reactions between paramagnetic entities such as electrons, holes, and triplet excitons. We present an overview of these effects and discuss three recent developments that shed new light on them: (1) tuning of the effects in molecularly engineered systems, (2) the discovery of ultrahigh magnetoresistance in molecular wires, and (3) the discovery of “fringe-field” magnetoresistance.

We review the first 10 years of research on organic spin-valve devices in the field of organic spintronics. The device figure of merit, magnetoresistance, is governed by the hyperfine interaction of the organic interlayer and the ability of the ferromagnetic electrodes to inject spin-polarized carriers. By choosing a deuterated π-conjugated polymer with a relatively long spin diffusion length as the organic interlayer and using a thin LiF buffer layer to raise the Fermi level of the cathode, a bipolar spin-valve device could be obtained in which the electroluminescence emission intensity is controlled by an external magnetic field. We show that the underlying physics of this spin-organic light-emitting diode is very different from that of a unipolar organic spin valve because of the magnetic properties of the spin-polarized bipolar space charge limited current in the device.

In this paper we present an innovative on-chip platform suitable for the simultaneous manipulation and detection of the transit of a single magnetic bead. This system is based on the controlled displacement of constrained magnetic domain walls (DWs) that are used to move and sense particles in suspension over the chip. To this scope, the high stray field from the transverse DWs created at the corners of ferromagnetic zig-zag structures is used for particles manipulation, while electrical contacts flanking a single corner are employed to simultaneously monitor the DW passage through that corner, via anisotropic magneto resistance (AMR) measurements. A single DW carrying a magnetic particle is nucleated and manipulated within the zig-zag shaped magnetic conduit, trough the action of external magnetic fields. At the same time, the variation of the voltage drop across a corner flanked by a pair of electrical leads is measured, allowing to detect the transit of the DW thanks to the change of the relative orientation of current and spins at the corner related to the peculiar micromagnetic configuration of the DW (AMR). Work is in progress in order to selectively distinguish the transit of a naked DW from that of a DW bound to a magnetic particle. This work paves the way to the development of a closed-loop microlfuidic platform for on-chip bead manipulation, where single bead can be finely moved and their motion continuously checked, via AMR electrical detection and without need of optical monitoring, in a fully integrated closed-loop system.

The microwave-induced magnetoresistance oscillations are exhibited by the GaAs/AlGaAs two dimensional electron system (2DES) under microwave and terahertz photo-excitation at liquid helium temperatures. Such oscillations are presently understood in terms of various theories. In order to identify the relative physical contributions, we have concurrently examined magnetotransport and microwave reflection from the 2DES. For the reflection measurements, a sensitive microwave detector was assimilated into the standard experimental setup. Here, we correlate changes in reflection with the concurrent transport response of the photo-excited 2DES.

Nano-structured graphene has recently attracted extraordinary attention due to its potential use as an electronic or spintronic material. We investigated the electrical conductivities of antidot and Ar-sputtered graphene samples under a magnetic field in terms of the carrier density. Antidot samples exhibit conductivity that is well explained by charged impurity scattering, which is associated with intravalley scattering. This suggestion is supported by the low intensity of the Raman D band, which is related to intervalley scattering induced by structural defects. In contrast, Ar-sputtered samples show a strong D band and conductivity that is affected by defect scattering. The difference in the main scattering mechanism between the two types of samples appears as Shubnikov-de Haas oscillations at high magnetic fields, which are observed in antidot samples but not in Ar-sputtered samples. Furthermore, an analysis of weak localization effects in both samples at low fields reveals that intra- and intervalley scatterings play significant roles in antidot and Ar-sputtered samples, respectively.

We studied the transport properties of the Fe/MgO/Fe and Fe/Ag/MgO/Ag/Fe magnetic tunnel junctions (MTJs) with 13-layer MgO barrier under bias voltage based on first-principles calculations. Our results showed that two features determine the TMR value decreases with bias of Fe/MgO/Fe MTJ: (1) interfacial states lying at 1.06 eV in spin down channel (2) the energy level of the spin down Δ1 band of the Fe electrode. Our results showed that an inserted Ag mono-layer at Fe/MgO interface can remarkably improve the TMR effect at a high bias voltage.

We performed magnetoresistance (MR) measurements on bulk carbon nanotube sheets that had been partially aligned by post-fabrication stretching. The magnetic field was applied under different orientations with respect to the direction of the stretch, while the electric current was either parallel or perpendicular to the direction of the stretch. We found that the fielddependence of the MR is composed of two terms, one positive and one negative. The magnitudes of both terms are largest when the field is parallel with the direction of the stretch. If the sheets are treated with nitric acid, the positive term is removed and the MR is smallest when the field is aligned with the magnetic field. We attribute these anisotropic features to magnetoelastic effects induced by the coupling between the magnetic catalyst nanoparticles, the magnetic field, and the network of nanotubes.

CoxC1-x granular films were deposited on Si substrates by a co-sputtering method. A large negative MR of 30.3% was obtained at 2 K for the sample prepared with the sputtering power of 50 W (C) and 4 W (Co). We have studied structural properties of Co-C granular films by Raman spectroscopy. Two peaks (D and G modes) from carbon bonds were clearly observed, and the intensity ratio of two peaks changed with the sputtering power, suggesting that the graphitization was promoted with the sputtering power. It was also revealed that the transport mechanism changed from tunneling to Mott’s variable range hopping and MR decreased with the sputtering power.

We proposed and computationally analyzed a nonvolatile power-gating field programmable gate array (NVPG-FPGA) based on pseudo-spin-transistor architecture with spin-transfer-torque magnetic tunnel junctions (STT-MTJs). The circuit employs nonvolatile static random memory (NV-SRAM) cells and nonvolatile flip-flops (NV-FFs) as the storage circuits. The circuit configuration and microarchitecture are compatible with SRAM-based FPGAs, and the additional nonvolatile memory functionality makes it possible to execute efficient power-gating (PG). Break-even time (BET) for the nonvolatile configuration logic block (NV-CLB) of the NVPG-FPGA was also analyzed, and reduction techniques of the BET were proposed, which allows highly efficient PG operations with a fine granularity.