Electronic measurement systems in the THz frequency range are often bulky and expensive devices. While some compact single-chip systems operating in the high millimeter-wave frequency range have recently been published, compact measurement systems in the low THz frequency range are still rare. The emergence of new silicon-germanium (SiGe) semiconductor technologies allow the integration of system components, like oscillators, frequency multipliers, frequency dividers, and antennas, operating in the low THz frequency range, into a compact monolithic microwave integrated circuits (MMIC), which contains most components to implement a low-cost and compact frequency-modulated continuous-wave-radar transceiver. This article presents a single transceiver solution containing all necessary components. It introduces a $0.48\,\mathrm{THz}$ radar transceiver MMIC with a tuning range of $43\,\mathrm{GHz}$ and an output power of up to $-9.4\,\mathrm{dBm}$ in the SG13G3 $130\,\mathrm{nm}$ SiGe technology by IHP. The MMIC is complemented by a dielectric lens antenna design consisting of polytetrafluoroethylene, providing up to $39.3\,\mathrm d\mathrm B\mathrm i$ of directivity and half-power beam widths of 0.95∘ in transmit and receive direction. The suppression of clutter from unwanted targets deviating from antenna boresight more than 6∘ is higher than $24.6\,\mathrm d \mathrm B$ in E- and H-Plane.

Microwave holography technique reconstructs a target image using recorded amplitudes and phases of the signals reflected from the target with Fast Fourier Transform (FFT)-based algorithms. The reconstruction algorithms have two or more steps of two- and three-dimensional Fourier transforms, which have a high computational load. In this paper, by neglecting the impact of target depth on image reconstruction, an efficient Fresnel-based algorithm is proposed, involving only one-step FFT for both single- and multi-frequency microwave imaging. Numerous tests have been performed to show the effectiveness of the proposed algorithm including planar and non-planar targets, using the raw data gathered by means of a scanner operating in X-band. Finally, a low-cost and high-speed hardware architecture based on fixed-point arithmetic is introduced which reconstructs the planar targets. This pipeline architecture was tested on field programmable gate arrays operating at 200 MHz clock frequency, which illustrates more than 30 times improvement in computation time compared with a computer.

The scattering of the H-polarized plane electromagnetic wave by a finite multilayer graphene strip grating is considered. The properties of the whole structure are obtained from the set of integral equations, which are written in the operator form. The scattering operators of a single layer are used and supposed to be known. Scattering and absorption characteristics as well as diffraction patterns are presented.

This paper presents an ultra-wideband coplanar waveguide (CPW)-to-asymmetric coplanar stripline (ACPS) transition based on aluminum nitride (AlN) substrate. The concepts of designing CPW, ACPS, and CPW-to-ACPS transition are explained. In order to suppress parasitic modes, vias going through AlN substrate are added along the ground traces. The signal trace is tapered out and chamfered to reduce the reflection caused by the termination of ground trace. The CPW-to-ACPS transition is designed, fabricated, and measured in a back-to-back configuration. The fabricated CPW-to-ACPS transition can provide a bandwidth of 165 GHz with an associated insertion loss of 3 dB.

This paper presents a fully-integrated direct-conversion fundamentally-operated mixer-first quadrature receiver module with a tunable LO in the 219–266 GHz band. It has been implemented in a 0.13-μm SiGe heterojunction bipolar transistor technology. It includes an on-chip LO path driven externally from the printed circuit board (PCB) connector level at 13.6–16.7 GHz. A hybrid coupler generates the quadrature LO signal, which drives a pair of double-balanced fundamentally-operated down-conversion mixers, whose RF ports are connected to a wideband lens-integrated on-chip ring antenna. The chip-on-lens assembly is placed in the recess of a high-speed PCB and wire-bonded. To compensate the inductive behavior of the wire-bond interconnection between the chip and the PCB at the high-speed IF outputs, an on-board 8-section step-impedance low-pass filter has been implemented. The module shows a 47 GHz 3-dB radio frequency/local oscillator operation bandwidth (BW), a peak conversion gain of 7.8 dB, a single-side-band noise figure of 11.3 dB, and a 3-dB IF BW of 13 GHz. The in-phase and quadrature amplitude imbalance stays below 1.58 dB for the 210–280 GHz band. The down-conversion and the baseband stages consume together 75.5 mW, while the LO path 378 mW. The maximum data-rate achieved with this receiver in combination with the transmitter presented in [1–3] is 60 Gbps for quadrature phase shift keying modulation.

Based on vector network analyzer Measurements, a model for the specular reflection behavior of printed circuit boards in the Terahertz range has been derived. It has been calibrated to suit the behavior of the measurements using a simulated annealing algorithm. The model has been tailored for integration to ray-tracing-based propagation modeling.

The benefit of cryogenic cooling on the performance of millimeter-wave GaAs Schottky-barrier varactor-based frequency multipliers has been studied. For this purpose, a dedicated compact model of a GaAs Schottky-barrier varactor using a triple-anode diode stack has been developed for use with a commercial RF and microwave CAD tool. The model implements critical physical phenomena such as thermionic-field emission current transport at cryogenic temperatures, temperature dependent mobility, reverse breakdown, self-heating, and high-field velocity saturation effects. A parallel conduction model is employed in order to include the effect of barrier inhomogeneities which is known to cause deviation from the expected I--V characteristics at cryogenic temperatures. The developed model is shown to accurately fit the I--V --T dataset from 25 to 295 K measured on the varactor diode stack. Harmonic balance simulations using the model are used to predict the efficiency of a millimeter-wave balanced doubler from room to cryogenic temperatures. The estimation is verified experimentally using a 188 GHz balanced doubler cooled down to 77 K. The model has been further verified down to 14 K using a 78 GHz balanced doubler.