Book contents
- Frontmatter
- Contents
- Foreword
- Preface
- List of symbols
- Introduction
- 1 Shallow impurities
- 2 Phenomenology of deep levels
- 3 Semiconductor statistics
- 4 Growth technologies
- 5 Doping with elemental sources
- 6 Gaseous doping sources
- 7 Impurity characteristics
- 8 Redistribution of impurities
- 9 Deep centers
- 10 Doping in heterostructures, quantum wells, and superlattices
- 11 Delta doping
- 12 Characterization techniques
- Appendix A Properties of III–V semiconductors
- Appendix B Constants and conversions
- References
- Index
Contents
Published online by Cambridge University Press: 05 October 2010
- Frontmatter
- Contents
- Foreword
- Preface
- List of symbols
- Introduction
- 1 Shallow impurities
- 2 Phenomenology of deep levels
- 3 Semiconductor statistics
- 4 Growth technologies
- 5 Doping with elemental sources
- 6 Gaseous doping sources
- 7 Impurity characteristics
- 8 Redistribution of impurities
- 9 Deep centers
- 10 Doping in heterostructures, quantum wells, and superlattices
- 11 Delta doping
- 12 Characterization techniques
- Appendix A Properties of III–V semiconductors
- Appendix B Constants and conversions
- References
- Index
Summary
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- Type
- Chapter
- Information
- Doping in III-V Semiconductors , pp. ix - xPublisher: Cambridge University PressPrint publication year: 1993