Hostname: page-component-cd9895bd7-dk4vv Total loading time: 0 Render date: 2024-12-28T19:56:22.471Z Has data issue: false hasContentIssue false
  • English
  • Français

A Method for In-Situ Calibration of Semiconductor Detectors

Published online by Cambridge University Press:  06 March 2019

J. Wernisch ,
H.J. August  and
A. Lindner-Schbnthaler
J. Wernisch
Affiliation:
Institut fur Angewandte und Technische Physik Technische Universitat Wien Wiedner HauptstraBe 8-10, A 1040 Vienna, Austria
H.J. August
Affiliation:
Institut fur Angewandte und Technische Physik Technische Universitat Wien Wiedner HauptstraBe 8-10, A 1040 Vienna, Austria
A. Lindner-Schbnthaler
Affiliation:
Institut fur Angewandte und Technische Physik Technische Universitat Wien Wiedner HauptstraBe 8-10, A 1040 Vienna, Austria
Get access

Abstract

A method of semiconductor detector calibration by variation of the incidence angle of the x-radiation is discussed.

Type
XIII. XRS Techniques and Instrumentation
Information
Advances in X-Ray Analysis , Volume 35 , Issue B: First Pacific-International Congress on X-ray Analytical Methods (PICXAM). Fortieth Annual Conference on Applications of X-ray Analysis, August 7-16, 1991 , 1991 , pp. 1079 - 1081
Copyright
Copyright © International Centre for Diffraction Data 1991

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Baker, C. A., Batty, C. J. and Sakamoto, S., Nucl.Instr.Meth., A259, 501 (1987)10.1016/0168-9002(87)90832-1Google Scholar
2. Zaluzek, N. J., in: Introduction to Analytical Electron Microscopy, J.J.Hren, J.I.Goldstein and D.C.Joy, eds., Plenum Press, New York, 121 (1979)10.1007/978-1-4757-5581-7_4Google Scholar