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Power amplifier optimization using base band and multiharmonic source/load-pull characterization with digital predistortion

Published online by Cambridge University Press:  19 June 2009

Ghalid Idir Abib ,
Eric Bergeault ,
Souheil Bensmida  and
Reda Mohellebi
Ghalid Idir Abib
Affiliation:
UPMC – L2E – Site Raphael – 3, rue Galilée – 94200 Ivry-Sur-Seine, France.
Eric Bergeault*
Affiliation:
Telecom ParisTech, Laboratoire Radiofréquences et Micro-ondes, Département COMELEC, 46, rue Barrault, 75634 Paris Cedex 13, France. Phone: 00-33-1-45-81-77-01; Fax: 00-33-1-45-80-40-36.
Souheil Bensmida
Affiliation:
Centre for Communications Research, University of Bristol, Merchant Venturers Building, Woodland Road, Bristol BS8 1U, UK.
Reda Mohellebi
Affiliation:
Telecom ParisTech, Laboratoire Radiofréquences et Micro-ondes, Département COMELEC, 46, rue Barrault, 75634 Paris Cedex 13, France. Phone: 00-33-1-45-81-77-01; Fax: 00-33-1-45-80-40-36.
*
Corresponding author: E. Bergeault E-mail: 1eric.bergeault@telecom-paristech.fr
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Abstract

In this paper, different techniques are combined in a unique characterization system dedicated to power transistor linearity improvement. Successive optimizations are performed using source-pull/load-pull techniques at fundamental, harmonic, and base-band frequencies associated with an instantaneous memoryless base-band predistortion procedure. Measurement results performed at 1.575 GHz on a metal semiconductor field effect transistor (MESFET) power device biased in class-AB under a quadrature phase shift keying (QPSK)-modulated signal excitation show that fundamental frequency load-pull increases the output power and power-added efficiency (PAE) by 2 dB and 16 percentage points, respectively. The fundamental frequency source-pull measurements lead to an adjacent channel power ratio (ACPR) variation equal to 3 dB. For harmonic load-pull (at 2f0), it has been found that some impedances greatly improve linearity but output power and PAE decrease. Source-pull characterization at the second harmonic frequency allows one to find a trade-off between output power, efficiency, and linearity. Moreover, the influence of base-band impedance on ACPR and error vector magnitude (EVM) is found to be 15 dB and 5.5 percentage points, respectively. Finally, instantaneous memoryless base-band predistortion improves ACPR and EVM values by 5 dB and 1 point, respectively.

Keywords

Power transistorLinearityFundamental and harmonic source/load-pullLow-frequency impedancesInstanteneous memoryless base-band predistortion
Type
Original Article
Information
International Journal of Microwave and Wireless Technologies , Volume 1 , Special Issue 4: European Microwave Week 2008 , August 2009 , pp. 255 - 260
Copyright
Copyright © Cambridge University Press and the European Microwave Association 2009

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References

REFERENCES

[1]Liu, J.; Dunleavy, L.P.; Arslan, H.: Exploration of power amplifier performance using a digital demodulation loadpull measurement procedure, in 65th Automatic RF Techniques Group Conf. Digest, 2005. DOI: 10.1109/ARFTGS.2005.1500567.CrossRefGoogle Scholar
[2]Ahn, K.-H.; Jeong, Y.-H.: Effects of source and load impedance on the intermodulation products of GaAs FETs. IEEE Int. Microwave Symp. Dig., 1 (2000), 469–472. DOI: 10.1109/MWSYM.2000.861074.Google Scholar
[3]Arthaber, H.; Mayer, M.; Magerl, G.: An active load-pull setup for broadband signals using digital baseband processing for the active loop. Int. J. RF Microwave Comput Aided Eng., 18 (2008), 574–581.CrossRefGoogle Scholar
[4]Marchetti, M.; Pelk, M.J.; Buisman, K.; Neo, W.C.E.; Spirito, M.; de Vreede, L.C.N.: Active harmonic load-pull with realistic wideband communication signals. IEEE Trans. Microwave Theory Tech., 56 (2008), 2979–2988. DOI: 10.1109/TMTT.2008.2007330.CrossRefGoogle Scholar
[5]Spirito, M.; Pelk, M.J.; Van Rijs, F.; Theeuwen, S.J.C.H.; Hartskeerl, D.; de Vreede, L.C.N.: Active harmonic load–pull for on-wafer out-of-band device linearity optimization. IEEE Trans. Microwave Theory Tech., 54(Part 1) (2006), 4225–4236. DOI: 10.1109/TMTT.2006.885568.CrossRefGoogle Scholar
[6]Colantonio, P.; Giannini, F.; Limiti, E.; Teappati, V.: An approach to harmonic load and source-pull measurements for high efficiency PA design. IEEE Trans. Microwave Theory Tech., 52(Part 1) (2004), 191–198. DOI: 10.1109/TMTT.2003.821276.CrossRefGoogle Scholar
[7]Williams, D.J.; Leckey, J.; Tasker, P.J.: Envelope domain analysis of measured time domain voltage and current waveforms provide for improved understanding of factors effecting linearity. IEEE Int. Microwave Symp. Dig., 2 (2003), 1411–1414.Google Scholar
[8]Sevic, J.F.; Burger, K.L.; Steer, M.B.: A novel envelope-termination load-pull method for ACPR optimization of RF/microwave power amplifiers. IEEE Int. Microwave Symp. Dig., 2 (1998), 723–726. DOI: 10.1109/MWSYM.1998.705093.Google Scholar
[9]Pelk, M.J.; de Vreede, L.C.N.; Spirito, M.; Jos, J.H.: Base-band impedance control and calibration for on-wafer linearity measurements, in 63rd Automatic RF Techniques Group Conf. Digest, 2004, 35–40.CrossRefGoogle Scholar
[10]Bensmida, S.; Bergeault, E.; Abib, G.I.; Huyart, B.: Power amplifier characterisation: an active load-pull system based on six-port reflectometer using complex modulated carrier. IEEE Trans. Microwave Theory Tech., 54(Part 2) (2006), 2707–2712. DOI: 10.1109/TMTT.2006.874870.CrossRefGoogle Scholar
[11]Muhonen, K.J.; Kavehrad, M.; Krishnamoorthy, R.: Adaptive baseband predistortion techniques for amplifier linearization, In 33rd Asilomar Conf. Signals, Systems and Computers, vol 2, 1999, 888–892. DOI: 10.1109/ACSSC.1999.831837.Google Scholar
[12]Abib, G.I.; Bensmida, S.; Bergeault, E.; Huyart, B.: A source-pull/load-pull measurement system including power amplifier linearization system using simple instantaneous memoryless polynomial base-band predistortion, in 36th European Microwave Conf., 2006, 252–254. DOI: 10.1109/EUMC.2006.281285.CrossRefGoogle Scholar
[13]Abib, G.I.; Bergeault, E.; Bensmida, S.; Huyart, B.: Experimental characterization of power transistors for linearity optimization, in 38th EUropean Microwave Conf., 2008, 242–245. DOI: 10.1109/EUMC.2008.4751433.CrossRefGoogle Scholar
[14]Deshours, F.; Bergeault, E.; Jallet, L.; Huyart, B.: An active load-pull measurement system using two six-port reflectometers. Microwave Opt. Technol. Lett., 7 (1994), 679–684.CrossRefGoogle Scholar
[15]Tsironis, C.: A novel design method for wideband power amplifiers. Microwave J., 35 (1992), 303–304.Google Scholar
[16]Ghannouchi, F.M.; Larose, R.; Bosisio, R.: A new multiharmonic loading method for large-signal microwave and millimeter-wave transistor characterization. IEEE Trans. on Microwave Theory Techn., 39 (1991), 986–992. DOI: 10.1109/22.81668.CrossRefGoogle Scholar
[17]Ferrero, A.; Pisani, U.: A generalized harmonic load-pull system, in 3rd Asia-pacific Microwave Conf. Proc., 1990, 449–452.Google Scholar
[18]Bergeault, E.; Gibrat, O.; Bensmida, S.; Huyart, B.: Multiharmonic source-pull/load-pull active setup based on six-port reflectometers: influence of the second harmonic source impedance on RF performances of power transistors. IEEE Trans. Microwave Theory Tech., 52 (2004), 1118–1124. DOI: 10.1109/TMTT.2004.825713.CrossRefGoogle Scholar
[19]Abou Chakra, S.; Huyart, B.: High speed millimeter wave five-port receiver, in 34th European Conf. Wireless Technology, 2004, 109–111.Google Scholar
[20]Bergeault, E.; Huyart, B.; Geneves, G.; Jallet, L.: Characterization of diode detectors used in six-port reflectometers. IEEE Trans. Instrum. Measure., 40 (1991), 1041–1043. DOI: 10.1109/19.119790.CrossRefGoogle Scholar