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Microstructural characterization of sputter-deposited Pt thin film electrode

Published online by Cambridge University Press:  03 March 2011

Ji-Eun Lim ,
Jae Kyeong Jeong ,
Kun Ho Ahn ,
Hyeong Joon Kim ,
Cheol Seong Hwang ,
Dong-Yeon Park  and
Dong-Su Lee
Ji-Eun Lim
Affiliation:
School of Materials Science and Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul 151-742, Korea
Jae Kyeong Jeong
Affiliation:
School of Materials Science and Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul 151-742, Korea
Kun Ho Ahn
Affiliation:
School of Materials Science and Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul 151-742, Korea
Hyeong Joon Kim
Affiliation:
School of Materials Science and Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul 151-742, Korea
Cheol Seong Hwang*
Affiliation:
School of Materials Science and Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul 151-742, Korea
Dong-Yeon Park
Affiliation:
Inostek Incorporated, 356-1 Gasan-dong, Keumchun-gu, Seoul 153-023, Korea
Dong-Su Lee
Affiliation:
Inostek Incorporated, 356-1 Gasan-dong, Keumchun-gu, Seoul 153-023, Korea
*
a)Address all correspondence to this author. e-mail: cheolsh@plaza.snu.ac.kr
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Abstract

Pt thin films of various thicknesses (30 nm ∼ 200 nm) were deposited on Si wafers with SiO2, Ti, TiO2, or IrO2 buffer layers at various temperatures (room temperature ∼200 °C) by a direct current magnetron sputtering process. The Pt films showed a strong (111)-preferred texture irrespective of the thickness, under-layer, and growth temperature. The authors previously reported [J-E. Lim, D-Y. Park, J.K. Jeong, G. Darlinski, H.J. Kim, and C.S. Hwang, Appl. Phys. Lett. 81, 3224 (2002)] that the films were composed of three kinds of grains with slightly different (111) lattice parameters (bulklike, 1.0% and 2.1% larger). This study details the microstructural variations of the Pt films according to the variations of experimental parameters. The different deposition conditions produced slightly different crystalline structures, but the three different (111) lattice parameters were always found. Epitaxial (200) Pt films on a (200) MgO substrate and a highly (111) textured Au thin film on a SiO2/Si did not show the same splitting in the lattice parameter. The grains with 1.0% and 2.1% larger (111) lattice parameter almost disappeared after postannealing at 1000 °C. However, surface chemical binding of the Pt film before and after annealing was unchanged. Therefore, it is believed that the lattice parameter splitting in the (111) textured Pt film originated from the interfacial grains with the distorted crystal structure due probably to growth stress.

Keywords

Metal filmX-ray diffraction (XRD)Microstructure
Type
Articles
Information
Journal of Materials Research , Volume 19 , Issue 2 , February 2004 , pp. 460 - 468
Copyright
Copyright © Materials Research Society 2004

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References

REFERENCES

1Lee, D-S., Park, D-Y., Kim, M.H., Chun, D-I., Ha, J. and Yoon, E. in Thin Films-Structure and Morphology, edited by Moss, S.C., Ila, D., Commarata, R.C., Chason, E.H., Einstein, T.L., and E.D. Williams. (Mater. Res. Soc. Symp. Proc. 441 Pittsburgh, PA, 1997), p. 341.Google Scholar
2Lairson, B.M., Visokay, M.R., Sinclair, R., Hagstrom, S. and Clemens, B.M.: Appl. Phys. Lett. 61 1390 (1992).Google Scholar
3Tokura, H., Window, B., Neely, D. and Swain, M.: Thin Solid Films 253 344 (1994).Google Scholar
4McIntyre, P.C., Maggiore, C.J. and Nastasi, M.: J. Appl. Phys. 77 6201 (1995).CrossRefGoogle Scholar
5McIntyre, P.C., Maggiore, C.J. and Nastasi, M.: Acta Mater. 46 879 (1997).Google Scholar
6Lee, J.M., Hwang, C.S., Cho, H.J. and Kim, H.J.: J. Electrochem. Soc. 145 1066 (1998).CrossRefGoogle Scholar
7Rand, M.J.: J. Electrochem. Soc. 120 66 (1973).Google Scholar
8Horii, H., Lee, B.T., Lim, H.J., Joo, S.H., Kang, C.S., Yoo, C.Y., Park, H.B., Kim, W.D., Lee, S.I. and Lee, M.Y.Technical Digest Symp. on VLSI Tech. (1999), p. 103.Google Scholar
9McIntyre, P.C., Maggiore, C.J. and Nastasi, M.: Technical Digest of Symposium VLSI Technology, Acta Mater. 46 869 (1997).Google Scholar
10Lim, J-E., Park, D-Y., Jeong, J.K., Darlinski, G., Kim, H.J. and Hwang, C.S.: Appl. Phys. Lett. 81 3224 (2002).CrossRefGoogle Scholar
11Windischmann, H.: J. Appl. Phys. 62 1800 (1987).CrossRefGoogle Scholar
12Ahn, K.H., Kim, S.S. and Baik, S.: J. Mater. Res. 17 2334 (2002).Google Scholar
13Cullity, B.D.Elements of X-Ray Diffraction (Addison-Wesley, London, U.K., 1978), p. 102.Google Scholar
14Barrett, C.R., Nix, W.D. and Tetelman, A.S.The Principles of Engineering Materials (Prentice-Hall, Englewood Cliffs, NJ, 1973), p. 541.Google Scholar
15Gallego, S., Ocal, C. and Soria, F.: Surf. Sci. 377–379 18 (1997).CrossRefGoogle Scholar
16Phillips, M.A., Ramaswamy, V., Clemens, B.M. and Nix, W.D.: J. Mater. Res. 15 2540 (2000).Google Scholar
17d’Heurle, F.M.Metall. Trans. 1 725 (1970).CrossRefGoogle Scholar
18Han, S.W. (private communication).Google Scholar