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Dielectric, ferroelectric, and piezoelectric properties of (001) BiScO3–PbTiO3 epitaxial films near the morphotropic phase boundary

Published online by Cambridge University Press:  03 March 2011

Juan C. Nino  and
Susan Trolier-McKinstry
Juan C. Nino
Affiliation:
Materials Research Institute, The Pennsylvania State University, University Park, Pennsylvania 16802
Susan Trolier-McKinstry
Affiliation:
Materials Research Institute, The Pennsylvania State University, University Park, Pennsylvania 16802
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Abstract

The dielectric, ferroelectric, and piezoelectric properties of (001) BiScO3–PbTiO3 epitaxial films near the morphotropic phase boundary were investigated. Epitaxial films, 1-μm thick, were grown on (100) SrRuO3/(100) LaAlO3 substrates by pulsed laser deposition from a BiScO3–PbTiO3 (40/60) ceramic target. The films had room temperature dielectric constant of 850, tanδ = 0.08, and maximum dielectric constant of 5530 at 455 °C. Well-saturated hysteresis loops with a remanent polarization of 42 μC/cm2 and a coercive field of 75 kV/cm were observed. The effective transverse piezoelectric coefficient e31,f was −12 C/m2. This result is quite encouraging for sensor and actuator device development because the observed piezoelectric properties are as good as (001) oriented Pb(Zr,Ti)O3 films (e31,f ∼ –12 C/m2) while the transition temperature is 100 °C higher.

Keywords

PiezoresponseThin filmEpitaxy
Type
Articles
Information
Journal of Materials Research , Volume 19 , Issue 2 , February 2004 , pp. 568 - 572
Copyright
Copyright © Materials Research Society 2004

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