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Growth mechanism of superconducting MgB2 films prepared by various methods

Published online by Cambridge University Press:  31 January 2011

H. Y. Zhai*
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, Tennessee 37931–6056
H. M. Christen
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, Tennessee 37931–6056
L. Zhang
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, Tennessee 37931–6056
M. Paranthaman
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, Tennessee 37931–6056
C. Cantoni
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, Tennessee 37931–6056
B. C. Sales
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, Tennessee 37931–6056
P. H. Fleming
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, Tennessee 37931–6056
D. K. Christen
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, Tennessee 37931–6056
D. H. Lowndes
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, Tennessee 37931–6056
*
a)Address all correspondence to this author.zhai@ornl.gov
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Abstract

The growth mechanisms of MgB2 films obtained by different methods on various substrates are comparably studied by transport measurements and scanning electron microscopy observations. The analyzed films include those prepared by ex situ postanneal with Tc0 ˜38.8 K and those from in situ anneal with Tc0 ˜24 K. It is clearly observed that the films obtained by the high-temperature reaction of e-beam evaporated B with Mg vapor are formed by the nucleation of independent MgB2 grains at the film surface, indicating that this approach may not be suitable to obtain epitaxial films. A significant oxygen contamination was also present in films obtained from pulsed-laser-deposition-grown precursors, which drag the Tc0 down to 24 K.

Type
Rapid Communications
Copyright
Copyright © Materials Research Society 2001

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