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Initial growth mechanism of Yba2Cu3Oycrystal on MgO substrate by liquid-phase epitaxy

Published online by Cambridge University Press:  31 January 2011

Katsumi Nomura
Affiliation:
Superconductivity Research Laboratory, International Superconductivity Technology Center, 1–10–13 Shinonome, Koto-ku, Tokyo 135–0062, Japan
Saburo Hoshi
Affiliation:
Superconductivity Research Laboratory, International Superconductivity Technology Center, 1–10–13 Shinonome, Koto-ku, Tokyo 135–0062, Japan
Yuichi Nakamura
Affiliation:
Superconductivity Research Laboratory, International Superconductivity Technology Center, 1–10–13 Shinonome, Koto-ku, Tokyo 135–0062, Japan
Teruo Izumi
Affiliation:
Superconductivity Research Laboratory, International Superconductivity Technology Center, 1–10–13 Shinonome, Koto-ku, Tokyo 135–0062, Japan
Yuh Shiohara
Affiliation:
Superconductivity Research Laboratory, International Superconductivity Technology Center, 1–10–13 Shinonome, Koto-ku, Tokyo 135–0062, Japan
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Abstract

Initial growth features of Yba2Cu3Oy (YBCO) crystal on an MgO substrate by a liquid-phase epitaxy (LPE) process were investigated and compared with homoepitaxial growth on a YBCO substrate. The partial dissolution of the seed grains in the initial stage of the LPE growth was influenced by the crystallinity of in-plane alignment of the seed grains, which could be explained by the preferential dissolution and growth mechanism. Concurrently, the slope angle of the growth grain varied with growth time. The opposite tendency of the slope angle change between the hetero- and the homoepitaxial growth was observed and could be explained by considering the difference in the step-advancing rates on each interface. It could be understood that the formation of entrapped liquid inclusions was the combination phenomena of both the small step-advancing rate of YBCO crystal on the MgO surface and the roughening of the MgO surface due to the partial dissolution of MgO to the solution.

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Articles
Copyright
Copyright © Materials Research Society 2001

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