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Low-temperature crystallization induced by excimer laser irradiation of SrBi2Ta2O9 films

Published online by Cambridge University Press:  31 January 2011

Kwang Soo Seol ,
Hironao Hiramatsu ,
Yoshimichi Ohki ,
In-Hoon Choi  and
Yong-Tea Kim
Kwang Soo Seol
Affiliation:
RIKEN (Institute of Physical and Chemical Research), 2-1 Hirosawa, Wako-shi, Saitama 351-0198, Japan
Hironao Hiramatsu
Affiliation:
Department of Electrical, Electronics, and Computer Engineering, Waseda University, Shinjuku-ku, Tokyo 169-8555, Japan
Yoshimichi Ohki
Affiliation:
Department of Electrical, Electronics, and Computer Engineering, Waseda University, Shinjuku-ku, Tokyo 169-8555, Japan
In-Hoon Choi
Affiliation:
Division of Materials Science and Engineering, Korea University, 5-1 Anam-dong, Sungbuku-ku, Seoul 136-701, Korea
Yong-Tea Kim
Affiliation:
KIST, P.O. Box 131, Cheongryang, Seoul 130–650, Korea
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Abstract

Transition of a SrBi2Ta2O9 precursor film from amorphous to crystalline was inducedby excimer laser irradiation. Both fluorite and perovskite crystalline structures in suchfilms were obtained by excimer laser irradiation at substrate temperatures between 200and 500 °C. Either an addition of excess bismuth in the precursor film or an increasein the substrate temperature enhanced the formation of the perovskite structure in theexcimer laser-induced annealing process, resulting in the perovskite crystalline phase ata relatively lower temperature of 500 °C. Such a low temperature is preferred whenSrBi2Ta2O9 is used in ferroelectric devices. The mechanism involved in thislaser-induced crystallization is also discussed.

Type
Rapid Communications
Information
Journal of Materials Research , Volume 16 , Issue 7 , July 2001 , pp. 1883 - 1886
Copyright
Copyright © Materials Research Society 2001

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