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Thermal stress characteristics of two-level Al(Cu) interconnect structure

Published online by Cambridge University Press:  06 January 2012

Seung-Hyun Rhee  and
Paul S. Ho
Seung-Hyun Rhee
Affiliation:
Laboratory for Interconnect and Packaging, Microelectronics Research Center, PRC/MER, R8650, The University of Texas at Austin, Austin, Texas 78712
Paul S. Ho
Affiliation:
Laboratory for Interconnect and Packaging, Microelectronics Research Center, PRC/MER, R8650, The University of Texas at Austin, Austin, Texas 78712
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Abstract

Thermal stress characteristics of single-level and two-level Al(Cu) interconnects passivated with tetraethyl orthosilicate oxide were measured using x-ray diffraction. Thermal stresses of the second-level metal lines were deduced from the experimental data based on an analysis of the x-ray absorption in a two-level interconnect structure. The confinement effect from the substrate on the stress characteristics of metal lines at different interconnect levels was investigated. Thermal stress behavior of the second-level lines indicated that the confinement effect from the Si substrate is reduced compared to the single-level lines, resulting in reduced levels of hydrostatic and shear stresses.

Type
Articles
Information
Journal of Materials Research , Volume 18 , Issue 4 , April 2003 , pp. 848 - 854
Copyright
Copyright © Materials Research Society 2003

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References

REFERENCES

Gardner, D.S. and Flinn, P.A., J. Appl. Phys. 67, 1831 (1990).Google Scholar
Yeo, I-S., Ho, P.S., and Anderson, S.G.H., J. Appl. Phys. 78, 945 (1995).CrossRefGoogle Scholar
Yeo, I-S., Anderson, S.G.H., Ho, P.S., and Hu, C.K., J. Appl. Phys. 78, 953 (1995).CrossRefGoogle Scholar
Tezaki, A., Mineta, T., Egawa, H., and Noguchi, T., IEEE IRPS Proc. 221 (1990).Google Scholar
Besser, P.R., Joo, Y-C., Winter, D., M. Van Ngo, and R. Ortega, Materials Reliability in Microelectronics IX, edited by Volkert, C.A., Verbruggen, A.H., and Brown, D.D. (Mater. Res. Soc. Symp. Proc. 563, Warrendale, PA, 1999), pp. 189–200.Google Scholar
Kuschke, W-M. and Arzt, E., Appl. Phys. Lett. 64, 1097 (1994).CrossRefGoogle Scholar
Besser, P.R., Brennan, S., and Bravman, J.C., J. Mater. Res. 9, 13 (1994).Google Scholar
Shute, C.J. and Cohen, J.B., J. Mater. Res. 6, 950 (1991).Google Scholar
Kasthurirangan, J., Ph.D. Dissertation, The University of Texas at Austin, Austin, TX (1998).Google Scholar
Gouldstone, A., Shen, Y-L., Suresh, S., and Thompson, C.V., J. Mater. Res. 13, 1956 (1998).Google Scholar
Shen, Y-L., J. Appl. Phys. 82, 1578 (1997).Google Scholar
Wikstrom, A., Gudmundson, P., and Suresh, S., J. Appl. Phys. 86, 6088 (1999).Google Scholar
Hsueh, C-H., J. Appl. Phys., 92, 144 (2002).Google Scholar
Sharma, P., Ardebili, H., and Loman, J., Appl. Phys. Lett. 79, 1706 (2001).Google Scholar
Niwa, H., Yagi, H., Tsuchikawa, H., and Kato, M., J. Appl. Phys. 68, 328 (1990).Google Scholar
Shen, Y-L., J. Mater. Res. 12, 2219 (1997).CrossRefGoogle Scholar
Kilijanski, M.S. and Shen, Y.L., Microelectronics Reliability 42, 259 (2002).Google Scholar
Clemems, B.M. and Bain, J.A., MRS Bull. 17, 46 (1992).Google Scholar
Flinn, P.A. and Chiang, C., J. Appl. Phys. 67, 2927 (1990).Google Scholar
Noyan, I.C. and Cohen, J.B., Residual Stress—Measurement by Diffraction and Interpretation (Springer-Verlag, New York, 1987).Google Scholar
Segmuller, A. and Murakami, M., Analytical Techniques for Thin Films, Treatise on Materials Science and Technology, (Academic Press, Boston, MA, 1988), Vol. 27, pp. 143–200.Google Scholar
Clarke, A.P., Ph.D. Thesis, Queen’s University at Kingston, Ontario, Canada (1993).Google Scholar
Rhee, S-H., Ph.D. Dissertation, The University of Texas at Austin, Austin, TX (2001).Google Scholar
Cullity, B.D., Elements of X-ray Diffraction, 2nd ed. (Addison-Wesley, Reading, MA, 1978).Google Scholar
The International Union of Crystallography, International Tables for X-ray Crystallography (D. Reidel Publishing, Dordrecht, Holland, 1983), Vol. III.Google Scholar
Sze, S.M., Physics of Semiconductor Devices, 2nd ed. (John Wiley & Sons, New York, 1981).Google Scholar
Murakami, M., Kuan, T-S. and Blech, I.A., Preparation and Properties of Thin Films, Treatise on Materials Science and Technology (Academic Press, New York, 1982), Vol. 24, pp. 163–210.Google Scholar
Nix, W.D., Metall. Trans. A 20A, 2217 (1989).Google Scholar
Doerner, M.F. and Nix, W.D., CRC Crit. Rev. Solid State Mater. Sci. 14, 225 (1988).Google Scholar
Dieter, G.E., Mech. Metall. 3rd ed. (McGraw-Hill, New York, 1986).Google Scholar