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Stresses in Anisotropic Thin Films Bonded to Stiff Substrates

Published online by Cambridge University Press:  21 February 2011

John C. Lambropculos  and
Shih-Ming Wan
John C. Lambropculos
Affiliation:
Department of Mechanical Engineering, University of Rochester, Rochester, NY 14627
Shih-Ming Wan
Affiliation:
Department of Mechanical Engineering, University of Rochester, Rochester, NY 14627
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Abstract

Numerical techniques are used to calculate the stress concentrations arising near the interface of a single-crystalline film which is bonded to a stiff substrate. The film has cubic elastic symmetry, and it is characterized by the anisotropic constants A and H which show the deviation of the material frcm elastic isotropy. The normal to the film-substrate interface is taken to be along the 100, 111 or 110 directions. The inhomogeneous stresses near the free edge and the uniform stresses far from the free edge are calculated, and the effects of cubic elastic anisotropy and of film growth direction are established for material parameters typical of metallic and semiconducting films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 108 , 1987 , 399
Copyright
Copyright © Materials Research Society 1988

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References

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