Thin films of Co-doped In2O3 diluted magnetic semiconductor have been grown on c-plane sapphire single crystals using pulsed laser deposition technique. Different characterizations such as x-ray diffraction, atomic force microscopy, and magneto-transport have been carried out to study the effect of growth temperature on structural, electrical, and magneto-transport properties of these films. Crystalinity of the films increases with the growth temperature. The films grown at high temperature have preferred orientation along (222) direction, while films grown at low temperature behave more like to nanocrystaline. It is observed that electrical properties of the films strongly depend on growth temperature. The resistivity and magnetoresistance of the films decreases with increase in growth temperature. On the other hand, mobility of the films increases with increase in growth temperature. This could be due to improvement in crystalinity of the films.

Angle-resolved photoemission was used to study the surface electronic band structure of ferromagnetic CoS2(below 120K) in high-quality single crystal samples. Strongly dispersing Co t2g bands are identified along the <100> k// direction. Fermi level crossings are identified along this Γ - X line (of the surface Brillouin zone) in higher resolution photoemission spectra, suggesting that the overall polarization may be controlled by the details of the band structure, particularly the surface band structure, rather than by exchange splitting on the Co atoms.

The synthesis, structure, and magnetic and transport properties of solid solutions Sr2FeRe1-xFexO6 (0≤x≤0.5) are reported. A structural evolution in the solid solutions from a double perovskite to perovskite is observed with increasing Fe/Re disorder. Except for the metallic parent compound all members of the series are semiconducting. For the Fe-doped samples a change from ferrimagnetic interactions in the parent compound to a complex superposition of ferrimagnetic and antiferromagnetic interactions was observed. The magnetic moment decreases with x, whereas the Curie temperature TC remains unaffected. The magnetic and Mössbauer data suggest Fe to act as a redox-buffer.

We report the experimental study of the structural and magnetotransport properties of chromium-doped indium oxide (In2O3:Cr) thin films using x-ray diffractometer, and by measuring the resistivity and Hall effect as a function of temperature in various magnetic fields. The In2O3:Cr diluted magnetic semiconductor thin films were grown under different partial oxygen pressures (Po2) on sapphire substrates using pulsed laser deposition (PLD) technique. Observed expansions in lattice parameter and crystal size in these films with increase in oxygen growth pressure are traceable to the reduction in oxygen vacancies. A redshift of the absorption edges of the samples with increase in oxygen growth pressure is attributed to the significant improvement in crystallinity. The exchange interaction between the electron spins in the conduction band and the spins of the Cr 3d electrons was evident in the anomalous Hall effect (AHE), which persisted up to 300 K. An analysis of the dc electrical transport in the films was carried out using hopping conduction and ionized impurity scattering models.