Light trapping is one of the key challenges for next generation thin film solar cells. In this work, we have identified the distinct light trapping effects for short and long wavelength solar spectrum range, by investigating lighting trapping structures on both sides of Si thin film solar cells. The sub-wavelength photonic front surface by wet etching and multi-layer photonic crystal reflector on the bottom surface are studied in detail for its solar energy absorption characteristics. Our study reveals the drastic difference of the light trapping effects within the solar spectrum wavelength. This work may provide guidance for the efficiency enhancementfor next generation thin film photovoltaic cells.

The impact of the Al and Ge ratio in the Al-Ge pastes are investigated for fabricating the single crystalline Si1-xGex thick layers on large area Si substrates by screen-printing metallization process. From X-ray reciprocal space maps, Ge fraction in the fabricated Si1-xGex thick layers are found to increase up to 40% with increasing the Ge ratio in the Al-Ge pastes. On the other hand, the interface of the Si and Si1-xGex layers are getting winding with increasing the Ge ratio in the Al-Ge pastes. The Al-Si-Ge phase diagram indicated that uniform SiGe layer can be fabricated by adjusting the Al-Ge ratio in the pastes within the liquid phase region.

Large lattice and thermal expansion coefficients mismatches between III-Nitride (III N) epitaxial layers and their substrates inevitably generate defects on the interfaces. Such defects as dislocations affect the reliability, life time, and performance of photovoltaic (PV) devices. High dislocation densities in epitaxial layer generate higher v-shaped pits densities on the layer top surface that also directly affect the device performance. Therefore, using an approach such as the embedded void approach (EVA) for defects reduction in the epitaxial layers is essential. EVA relies on the generation of high densities of embedded microvoids (∼108/cm2), with ellipsoidal shapes. These tremendous number of microvoids are etched near the interface between the III N thin-film and its substrate where the dislocation densities present with higher values.

This article used a 3-D constitutive model that accounts the crystal plasticity formulas and specialized finite element (FE) formulas to model the EVA in multi-junction PV and therefore to study the effect of the embedded void approach on the defects reduction. Mesh convergence and 2-D analytical solution validation is conducted with accounting thermal stresses. Several aspect and volume ratios of the embedded microvoids are used to optimize the microvoid dimensions.

The wafering of thin silicon substrates is done by wire sawing technology. In this work a numerical model for the investigation of microstructural mechanisms like cracking and damage evolution during the sawing process is presented. A three-dimensional finite element model representing the phase transformation properties of silicon is validated by loading curves from nano-indentation experiments. By using cohesive zone finite elements, the crack lengths as well as crack initiation depths can be quantified and compared with the experimental results in terms of the maximum depth of subsurface damage.

We have investigated the chemical and electrical properties of a thin SiO2/TiO2 stacking layer deposited on n-Si and heavily phosphorus-doped n++ Si substrates to elucidate effects of phosphorus doping of Si absorbers on the band alignment and electrical performance of a SiO2/TiO2 stack-based electron-selective contact deposited on the differently doped Si substrates. From our XPS study, we show a shift of the TiO2 energy levels up to ∼0.13 eV with respect to those of Si as the doping level of Si substrates changes. We also show that the conduction band offset of the SiO2/TiO2 stacking layer at the interface with the n++ Si substrate seems to smaller than that of the SiO2/TiO2 stacking layer at the interface with n-Si substrate. Finally, from our electrical transport measurements, we could conclude that the thinner tunneling barrier, the increased electron density in front of the SiO2 layer in the n++ Si surface, and/or the reduced barrier height by heavy doping, seem to enhance the majority electron transport property of the SiO2/TiO2/n++ Si samples compared to that of the SiO2/TiO2/n-Si samples.

Graphene oxide (GO)/MnO2 nanocomposites were synthesized by adding KMnO4 in a solution of water and ethanol (3:1), containing 10 mg of GO. Brown precipitates were obtained after a continuous stirring for 1 hr. The precipitates were then washed with deionized water (DI) water and dried to obtain the MnO2-GO nanocomposites. Pure MnO2 was also synthesized using the same method without GO for the comparison. X-ray diffraction pattern confirm δ-MnO2 type of MnO2 with birnessite type MnO2 structure. The TEM images show the average diameter of MnO2 nanorods as 15 nm. Electrochemical characterizations were carried out in an aqueous solution of 3M KOH. Charge-discharge studies were carried out between 1A/g to 20 A/g current range. The MnO2-GO nanocomposites showed improved electrochemical performances. The capacitance of MnO2 and MnO2-GO electrodes was found to be as 300 F/g, and 350 F/g, respectively at a current of 0.5 A/g.

Molecular dynamics simulations were utilized to determine the oxygen anion diffusivity in pure ceria (CeO2) and doped ceria MxCe1-xO2-0.5x (M=Gd, Sm and Pr) with varying level of dopant concentration from 5-30% (x = 0.05-0.3). Doping with Gd showed an improvement in oxygen anion diffusivity value by two order of magnitude (D = 4.67x10-8 cm2/s at 1173 K) as compared to the undoped ceria (D = 1.33x10-10 cm2/s at 1173 K). 10% of doping level was estimated as the optimum concentration of all the dopants at which all of the doped ceria materials showed maximum diffusivity of oxygen anion. Among the three dopants studied, Pr was observed to show maximum diffusivity of oxygen anion in the temperature range of 773-1173 K of simulations.