In this work we produce atomically thin carbon nanostructures which have a disk-like shape when deposited on a substrate. These nanostructures have intermediate characteristics between a graphene island and a molecular compound and have the potentiality to be used either as they are, or to become building blocks for functional materials or to be manipulated and engineered into composite layered structures.

The carbon nanostructures are produced in a premixed ethylene/air flame with a slight excess of fuel with respect to the stoichiometric value. The size distribution of the produced compounds in aerosol phase has been measured on line by means of a differential mobility analyzer (DMA) and topographic images of the structures deposited on mica disks were obtained by Atomic Force Microscopy. Raman spectroscopy and XPS have been used to characterize their structure and the electronic and optical properties were obtained combining on-line photoionization measurements with Cyclic Voltammetry, light absorption and photoluminescence.

When deposited on the mica substrate the carbon compounds assume the shape of an atomically thin disk with in plane diameter of about 20 nm. Carbon nano-disks consist of a network of small aromatic island with in plane length, La, of about 1 nm. Raman spectra evidence a significant amount of disorder which is in a large part due to the quantum confinement in the aromatic islands. Nano-disks contain small percentage of sp3 and the O/C ratio is lower than 6%. They furthermore present interesting UV and visible photoluminescence properties.

In this report, we describe a process for achieving atomically smooth, few-layer thick, hexagonal boron nitride (h-BN) films on sapphire substrates by MOCVD, using Triethylboron (TEB) and NH3 as precursors. Two different growth modes have been observed depending on the V/III ratio. Three-dimensional (3D) island growth is dominant in the low V/III range; in this range growth rate decreases with increasing deposition temperature. This island growth mode transitions to a self-terminating growth mode when V/III > 2000, over the entire deposition temperature range studied (i.e. 1000-1080oC). Raman spectroscopy verifies the h-BN phase of these films, and atomic force microscopy measurements confirm that the surfaces are smooth and continuous, even over atomic steps on the surface of the substrate. Using X-ray reflectance measurements, the thickness of each film grown under a range of conditions and times was determined to consistently terminate at 1.6nm, with a variation of less than 0.2 nm. Thus we have identified a self-terminating growth mode that enables robust synthesis of h-BN with highly uniform and reliable thickness on non-metal catalyzed substrates. Furthermore, this self-terminating growth behavior has shown signs of transitioning to continuous growth as deposition temperature increases.

Nanoscrolls consist of sheets rolled up into a papyrus-like form. Their open ends produce great radial flexibility, which can be exploited for a large variety of applications, from actuators to hydrogen storage. They have been successfully synthesized from different materials, including carbon and boron nitride. In this work we have investigated, through fully atomistic molecular dynamics simulations, the dynamics of scroll formation for a series of graphene-like carbon nitride (CN) two-dimensional systems: g-CN, triazine-based (g-C3N4), and heptazine-based (g-C3N4). Carbon nitride (CN) structures have been attracting great attention since their prediction as super hard materials. Recently, graphene-like carbon nitride (g-CN) structures have been synthesized with distinct stoichiometry and morphologies. By combining these unique CN characteristics with the structural properties inherent to nanoscrolls new nanostructures with very attractive mechanical and electronic properties could be formed. Our results show that stable nanoscrolls can be formed for all of CN structures we have investigated here. As the CN sheets have been already synthesized, these new scrolled structures are perfectly feasible and within our present-day technology.

The electronic band structures of monolayer molybdenum dichalcogenides, MoS2, MoSe2, and MoTe2 under either uniaxial or biaxial strain are calculated using first-principles calculation with the GW method. The imposed uniaxial strain is in the zigzag direction in the honeycomb lattice whereas the imposed biaxial strain is in the zigzag and armchair directions. It is found that the band gaps of these dichalcogenides almost linearly increase with the decrease of the magnitude of compressive strain, reach their maxima at some compressive strain, and then decrease almost linearly with the increase of tensile strain. It is also found their maximum band gaps are direct bandgaps.

This paper reports low temperature, digital control, fast synthesis of high-quality boron nitride nanosheets (BNNSs) and their electronic device application. Raman scattering spectroscopy, X-ray diffraction (XRD), Transmission electron microscopy (TEM) are used to characterize the BNNSs. With the synthesized various BNNSs, two prototypic types of deep UV photodetectors have been fabricated, and sensitivity, response and recovery times, as well as repeatability have been characterized. Effects of period and thickness of BNNSs on the properties of prototypic photodetectors are also discussed.

Graphyne is a generic name for a carbon allotrope family of 2D structures, where acetylenic groups connect benzenoid rings, with the coexistence of sp and sp2 hybridized carbon atoms. In this work we have investigated, through fully atomistic reactive molecular dynamics simulations, the dynamics and structural changes of the hydrogenation of α, β, and γ graphyne forms. Our results showed that the existence of different sites for hydrogen bonding, related to single and triple bonds, makes the process of incorporating hydrogen atoms into graphyne membranes much more complex than the graphene ones. Our results also show that hydrogenation reactions are strongly site dependent and that the sp-hybridized carbon atoms are the preferential sites to chemical attacks. In our cases, the effectiveness of the hydrogenation (estimated from the number of hydrogen atoms covalently bonded to carbon atoms) follows the α, β, γ-graphyne structure ordering.

Resonant Raman scattering in molybdenum disulfide (MoS2) is studied as a function of the sample thickness. Optical emission from 1ML, 2ML, 3ML and bulk MoS2 is investigated both at room and at liquid helium temperature. The experimental results are analysed in terms of the recently proposed attribution of the Raman peaks to multiphonon replica involving transverse acoustic phonons from the vicinity of the high-symmetry M point of the MoS2 Brillouin zone. It is shown that the corresponding processes are quenched in a few monolayer samples much stronger than the modes involving longitudinal acoustic phonons. It is also shown that along with the disappearance of multiphonon replica, the Raman modes, which are in-active in bulk become active in a few-monolayer flakes.

Chalcogenide materials have regained attention after the recent recognition of the compatibility of transition metal dichalcogenides with graphene. Additionally, there has been a recent appreciation for the rich variety of properties they support due to the anomalies in the materials’ intrinsic band structure. These materials generally have layered structures and weak interlayer connection through the chalcogen layer and its van der Waals type bonding. We have synthesized orthorhombic copper telluride and measured its electrical transport properties. The results of these measurements reveal that the conduction is metallic in both the in-plane and out-of-plane directions. The range of stability of this structure is examined along with the lattice constants. The independence of the resistivity in samples to changes in excess copper indicates that the transport is essentially within the conducting planes. This result shows that the material hosts two-dimensional character likely due to its covalent interlayer bonding.

Ultrathin colloidal PbS nanosheets are synthesized using organometallic precursors with chloroalkane cosolvents, resulting in tunable thicknesses ranging from 1.2 nm to 4.6 nm. We report the first thickness-dependent photoluminescence spectra from lead-salt nanosheets. The one-dimensional confinement energy of these quasi-two-dimensional nanosheets is found to be proportional to 1/L instead of 1/L2 (L is the thickness of the nanosheet), which is consistent with results calculated using density functional theory as well as tight-binding theory.

Boron nitride is of great interest as a 2 dimensional (2D) insulator for use as an atomically flat substrate, gate dielectric and tunneling barrier. At this point the most promising and widely used approach for growth of mono-to-few layer BN is metal catalyzed chemical vapor deposition (CVD). Bulk Cu foil has been the most popular metal substrate for growth of h-BN and graphene, as such there are well developed processes for substrate preparation and growth. As an alternative thin Cu films deposited on an insulating substrate have some advantages over foil, including more uniform thermal contact with substrate heater, better mechanical stability, transfer free processing, and selective area growth. However, Cu films deposited on SiO2 present their own unique problems like Cu SiO2 stability and small Cu grain size. Here we present results on the growth on few-layer BN by metal organic chemical vapor deposition (MOCVD) on Cu thin films on SiO2/Si. We explore the effects of substrate preparation and annealing conditions on the Cu morphology in order to understand the impact on the BN. To minimize the effects of Cu SiO2 interdiffusion, we investigate the use of a Ni buffer layers. BN films were studied after transfer to SiO2/Si films using Raman and AFM to determine the impact of Cu film microstructure on the morphology of few layer BN films.