We demonstrate a suspended graphene-(poly(methyl methacrylate) (PMMA) polymer angular displacement actuator enabled by variable elastic modulus of the perforated stacked structure. Azimuthal flexures support a central disc-shaped membrane, and compression of the membrane can be used to control the rotation of the entire structure. Irradiating the PMMA on graphene stack with 5 kV electrons in a convention scanning electron microscope reduces the elastic modulus of the PMMA and allows graphene’s built in strain to dominate and compress the flexures, thus rotating the actuator.

Developing functional, cleavable two-dimensional materials for use in next generation devices has recently become a topic of considerable interest due to their unique properties. Of particular interest, transition metal halides CrI3 and CrCl3 have shown to be good contenders for tunable and cleavable magnetic materials due to their unique magnetic properties in the monolayer. Here, electron spin resonance spectroscopy is used to pinpoint the atomic origins and underlying mechanisms of magnetic interactions as a function of temperature (5-500 K) and microwave frequency (9.43, 120 GHz) on CrI3 and CrCl3 bulk single crystals. ESR signals from CrI3 due to Cr3+ were observed to decay at 460 K, while ESR signals from CrCl3 remain up to 500 K. In the case of CrCl3, the temperature dependences of signal behavior, line width and g-value show characteristic signatures of ferromagnetic fluctuations at around 40 K, near to the antiferromagnetic phase transition at 17 K.

The bulk van der Waals crystal Mn3Si2Te6 (MST) has been irradiated with a proton beam of 2 MeV at a fluence of 1×1018 H+ cm-2. The temperature dependent magnetization measurements show a drastic decrease in the magnetization of 49.2% in the H//c direction observed in ferrimagnetic state. This decrease in magnetization is also reflected in the isothermal magnetization curves. No significant change in the ferrimagnetic transition temperature (75 K) was reflected after irradiation. Electron paramagnetic resonance (EPR) spectroscopy shows no magnetically active defects present after irradiation. Here, experimental findings gathered from MST bulk crystals via magnetic measurements, magnetocaloric effect, and heat capacity are discussed.

van der Waals (vdW) magnetic materials show promise in being the foundation for future spintronic technology. The magnetic behavior of Fe2.7GeTe2 (FGT), a vdW itinerant ferromagnet, was investigated before and after proton irradiation. Proton irradiation of the sample was carried out at a fluence of 1×1018 cm-2. The magnetization measurements revealed a small increase of saturation magnetization (Ms) of about 4% upon proton irradiation of the sample, in which, the magnetic field was applied parallel to the c-axis. X-ray photoelectron spectroscopy for pristine and irradiated FGT revealed a general decrease in intensity after irradiation for Ge and Te and an increase in peak intensity of unavoidable surface iron oxide. Furthermore, no noticeable change in the Curie temperature (TC =152 K) is observed in temperature dependent magnetization variation. This work signifies the importance of employing protons in tuning the magnetic properties of vdW materials.

The heat transfer properties of the organic molecular crystal α-RDX were studied using three phonon scattering based thermal conductivity models. It was found that the widely used Peierls-Boltzmann model for thermal transport in crystalline materials breaks down for α-RDX. We show this breakdown is due to a large degree of anharmonicity that leads to a dominance of diffusive-like carriers. Despite being developed for disordered systems, the Allen-Feldman theory for thermal conductivity actually gives the best description of thermal transport. This is likely because diffusive carriers contribute to over 95% of the thermal conductivity in α-RDX. The dominance of diffusive carriers is larger than previously observed in other fully ordered crystalline systems. These results indicate that van der Waals bonded organic crystalline solids conduct heat in a manner more akin to amorphous materials than simple atomic crystals.

Quantum computers are close to become a practical technology. Solid-state implementations based, for example, on superconducting devices strongly rely on the quality of the constituent materials. In this work, we fabricate and characterize superconducting planar resonators in the microwave range, made from aluminum films on silicon substrates. We study two samples, one of which is unprocessed and the other cleaned with a hydrofluoric acid bath and by heating at 880 °C in high vacuum. We verify the efficacy of the cleaning treatment by means of scanning transmission electron microscope imaging of samples’ cross sections. From 3 h-long resonator measurements at ≈ 10 mK and with ≈ 10 photonic excitations, we estimate the frequency flicker noise level using the Allan deviation and find an approximately tenfold noise reduction between the two samples; the cleaned sample shows a flicker noise power coefficient for the fractional frequency of ≈ 0.23 × 10−15. Our preliminary results follow the generalized tunneling model for two-level state defects in amorphous dielectric materials and show that suitable cleaning treatments can help the operation of superconducting quantum computers.

Many novel materials are being actively considered for quantum information science and for realizing high-performance qubit operation at room temperature. It is known that deep defects in wide-band gap semiconductors can have spin states and long coherence times suitable for qubit operation. We theoretically investigate from ab-initio density functional theory (DFT) that the defect states in the hexagonal silicon carbide (4H-SiC) are potential qubit materials. The DFT supercell calculations were performed with the local-orbital and pseudopotential methods including hybrid exchange-correlation functionals. Di-vacancies in SiC supercells yielded defect levels in the gap consisting of closely spaced doublet just above the valence band edge, and higher levels in the band gap. The divacancy with a spin state of 1 is charge neutral. The divacancy is characterized by C-dangling bonds and a Si-dangling bonds. Jahn-teller distortions and formation energies as a function of the Fermi level and single photon interactions with these defect levels will be discussed. In contrast, the anti-site defects where C, Si are interchanged have high formation energies of 5.4 eV and have just a single shallow defect level close to the valence band edge, with no spin. We will compare results including the defect levels from both the electronic structure approaches.