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1 results

  • Bulk Crystal Growth, Epitaxy, and Defect Reduction in Silicon Carbide Materials for Microwave and Power Devices

  • J. J. Sumakeris, J. R. Jenny, A. R. Powell
  • Journal:
    MRS Bulletin / Volume 30 / Issue 4 / April 2005
    Published online by Cambridge University Press:
    31 January 2011, pp. 280-286
    Print publication:
    April 2005

  • We discuss continuing materials technology improvements that have transformed silicon carbide from an intriguing laboratory material into a premier manufacturable semiconductor technology. This advancement is demonstrated by reduced micropipe densities as low as 0.22 cm−2 on 3-in.-diameter conductive wafers and 16 cm−2 on 100-mm-diameter conductive wafers. For high-purity semi-insulating materials, we confirm that the carbon vacancy is the dominant deep-level trapping state, and we report very consistent cross-wafer activation energies derived from temperature-dependent resistivity.Warm-wall and hot-wall SiC epitaxy platforms are discussed in terms of capability and applications. Specific procedures that essentially eliminate forward-voltage drift in bipolar SiC devices are presented in detail.