In this work a de-embedding technique oriented to the evaluation of the load line at the intrinsic resistive core of microwave FET devices is presented. The approach combines vector high-frequency nonlinear load-pull measurements with an accurate description of the reactive nonlinearities, thus allowing one to determine the actual load line of the drain–source current generator under realistic conditions. Thanks to the proposed approach, the dispersive behavior of the resistive core and the compatibility of the voltage and current waveforms with reliability requirements can be directly monitored. Different experiments carried out on a gallium nitride HEMT sample are reported.
