Materials for advanced semiconductor memories. The need for emerging and new memory technologies with non-volatility and low power-consumption performance continues to rapidly increase, while improvements in current dynamic random-access memory and NAND flash are simultaneously being pursued. In both new and current memories, material innovation is of central importance. In this issue of MRS Bulletin, recent advances in both of these critical areas are reviewed, with a focus on emerging and novel materials for disruptive memory concepts. The cover shows automated electrical testing of spintronics devices used as memory fabricated at SPINTEC, Grenoble, France. See the technical theme that appears on page 330.
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Society News
In memoriam: Walter Lyons Brown
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- 10 May 2018, p. 387
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Features
Beyond the Lab
Food for thought—edible soft robotic candy actuators
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- 10 May 2018, pp. 328-329
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Historical Note
Indigenous Amazonian potteries as early reinforced ceramics
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- 10 May 2018, p. 388
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Book Reviews
Introduction to Magnetic Random-Access Memory by Bernard Dieny, Ronald B. Goldfarb, and Kyung-Jin Lee
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- 10 May 2018, p. 389
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Electron Nano-Imaging: Basics of Imaging and Diffraction for TEM and STEM Nobuo Tanaka
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- 10 May 2018, pp. 389-390
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2D Nanoelectronics: Physics and Devices of Atomically Thin Materials Mircea Dragoman and Daniela Dragoman
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- 10 May 2018, p. 390
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Posterminaries
The potential of robots for humankind
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- 10 May 2018, pp. 391-392
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Front Cover (OFC, IFC) and matter
MRS volume 43 issue 5 Cover and Front matter
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- 10 May 2018, pp. f1-f7
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Back Cover (OBC, IBC) and matter
MRS volume 43 issue 5 Cover and Back matter
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- 10 May 2018, pp. b1-b2
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