Symposium A – Materials Synthesis and Processing Using Ion Beams
Research Article
Ion Beam-Assisted Deposition of Biaxially Aligned CeO2 and ZrO2 Thin Films on Amorphous Substrates
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- 22 February 2011, 953
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Nucleation and Growth of Cubic Boron Nitride Films Produced by Ion-Assisted Pulsed Laser Deposition
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- 22 February 2011, 959
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Damage-Free Ion Beam Doping of Carbon During Molecular Beam Epitaxy of GaAs
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- 22 February 2011, 965
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An Overview of Dry Etching Damage
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- 22 February 2011, 977
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Surface Microstructure of High Temperature Beryllium Implanted with Deuterium
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- 22 February 2011, 987
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Intra-Cascade Surface Recombination of Point Defects During Ion Bombardment of Ge (001)
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- 22 February 2011, 993
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Molecular Dynamics Simulation of the Effects of Energetic Cluster Ion Impact on Solid Surface
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- 22 February 2011, 999
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Irradiation Effects of Ar-Cluster Ion Beams on Si Surfaces
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- 22 February 2011, 1005
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Effects of Hyperthermal Carbon Subimplantation Doping on the Raman Spectra of Gaas
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- 22 February 2011, 1011
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Structural Analysis of Silicon Doped by Plasma Source Ion Implantation
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- 22 February 2011, 1017
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Molecular Dynamics Simulations of Diamond and Carbon Clusters
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- 22 February 2011, 1023
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Low temperature photoluminescence from GaAs impinged by mass-separated low-energy C+ ion beams during molecular beam epitaxy
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- 22 February 2011, 1029
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Formation of Double-Height Si(001) Steps by Sputtering with Xe Ions - A Computer Simulation
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- 22 February 2011, 1035
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Reactive Ion Etching Processes for Amorphous Germanium Alloys
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- 22 February 2011, 1041
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Investigation of Damage Induced by Low Energy Focused Ion Beam Irradiation in GaAs
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- 22 February 2011, 1047
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Ultrathin Low Energy Simox for Low Cost, High Density Applications
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- 22 February 2011, 1053
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Application of Ion-Plasma-Electron Technological Source T A M E K for Modification of Materials
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- 22 February 2011, 1059
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Light Impurity Depth Profiling in the Nuclear Reaction AnalysiS
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- 22 February 2011, 1065
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