We investigate the influence of refractive index contrast on the light scattering properties of nanotextured interfaces, which serve as front contact for p-i-n thin-film silicon solar cells. We here focus on ZnO surfaces with randomly oriented pyramidal features, known for their excellent light trapping performance. Transparent replicas, with a different refractive index, but practically identical morphology compared to their ZnO masters, were fabricated via nanoimprinting. Within the theoretical framework we recently proposed, we show how the angular and spectral dependence of light scattered by nanostructures with identical morphology but different refractive index may be related to each other allowing direct comparison of their light trapping potential within the device.

Most of micromachined and/or integrated fluorescence detectors suffer from high limit of detection (LOD) compared to conventional optical system that consists of discrete optical components, which is mainly due to higher laser light scattering of integrated optics rather than detector sensitivity. In this work, we have reduced background (BG) photocurrent of an integrated hydrogenated amorphous Si (a-Si:H) fluorescence detector due to laser light scattering by nearly one order magnitude, significantly improving a LOD. The detection platform comprises a microlens and the annular fluorescence detector where a thick SiO2/Ta2O5 multilayer optical interference filter (>6 μm) is monolithically integrated on an a-Si:H pin photodiode. With a microfluidic capillary electrophoresis (CE) device mounted on the platform, the system is demonstrated to separate DNA restriction fragment digests (LOD: 58 pg/μL) as well as 2 nM of fluorescein-labeled oligomer (LOD: 240 pM) with high speed, high sensitivity and high separation efficiency. The integrated a-Si:H fluorescence detector exhibits high sensitivity for practical fluorescent labeling dyes as well as feasibility of monolithic integration with a laser diode, making it ideal for application to point-of-care microfluidic biochemical analysis.

The hydrogenated amorphous silicon (a-Si:H) thin film transistors (TFTs) having a very high field-effect mobility of 1.76 cm2/V-s and a low threshold voltage of 2.43 V have been fabricated successfully using the hot wire chemical vapor deposition (HWCVD).

We have developed a thermodynamic model that predicts the heat distribution in a stack of PECVD SiO2 and a-Si:H on crystalline Si after laser irradiation. The model is based on solving the total enthalpy heat equation with a finite difference scheme. The laser used in the model is a frequency doubled Nd:YVO4 green laser with pulse duration in the nanosecond range. The modeling was done with the aim of getting a better understanding of our newly developed laser ablation process for making local contacts on back-junction silicon solar cells. Lasers with pulse duration within the nanosecond range are usually believed to induce too much thermal damage into the underlying silicon to make them suitable for high efficiency solar cells. In our case, insertion of a thin layer of a-Si:H between the SiO2 and the Si absorbs much of the laser irradiation both optically and thermally. This makes it possible to form local contacts to Si in a damage-free way. In addition, the residual a-Si:H serves as an excellent surface passivation layer for the Si substrate. We have also developed a simple static model to determine the onset of SiO2 ablation on a-Si:H layers of varying thickness. The models, both the static and the dynamic, are in good agreement with experimental data.

We present results of extremely short carrier lifetime measurements on a series of hydrogenated nanocrystalline silicon (nc-Si:H) thin films by a novel, non-destructive, non-contact method. Transmission modulated photoconductive decay (TMPCD) is a newly developed technique which appears to have high enough sensitivity and time resolution to measure the extremely short carrier lifetimes on the order of a nanosecond. As a proof of this, we measure various nc-Si:H samples of varying crystalline volume fraction as well as a fully amorphous sample. To ascribe an effective lifetime to the materials, we use a simple model which assumes a single exponential decay. By using this model, effective lifetimes can be deconvoluted from our pump beam giving nanosecond lifetimes. Lifetimes of between 1.9 and 0.9 nanoseconds are reported and trend to decreasing lifetimes as crystalline volume fraction is increased.

In this work, we examined the Ge incorporation and the accompanied defect formation during PECVD deposition of hydrogenated amorphous silicon-germanium alloys (a-Si1-xGex:H). In particular, we studied the effect of hydrogen on film growth, defect formation, Ge and Si incorporation efficiencies, and the H-bonding configuration. Our results indicate that hydrogen has a strong effect on improving the a-Si1-xGex:H film quality and the Ge incorporation in a-Si1-xGex:H. With adequate hydrogen dilution, the a-Si1-xGex:H thin-film quality significantly improved. However, excessive hydrogen dilution degraded the film properties. A number of analytical tools were employed, including FTIR, XPS, UV-Visible spectroscopy, photoconductivity, etc. The a-Si1-xGex:H material having 24% Ge content and a bangap of 1.61ev produced the solar cell with a conversion efficiency of 7.07%.

Multi-junction thin-film devices have emerged as very promising PV materials due to reduced cost, manufacturing ease, efficiency and long term performance. The consequent growing interest of the PV community has lead to the development of new methods for the correction of indoor measurements to standard test conditions (STC), as presented in this paper. The experimental setup for spectral response measurement of multi-junction large-area thin-film modules is presented. A method for reliable corrections of indoor current-voltage characterization to STC is presented: results are compared with outdoor measurements where irradiance conditions are close to standard ones, highlighting ongoing challenges in standard characterization of such devices.

Amorphous silicon single-junction p-i-n and Micromorph tandem solar cells are deposited in KAI-M reactors on in-house developed LPCVD ZnO front TCO's. An a-Si:H p-i-n cell with a stabilized efficiency of 10.09 % on 1 cm2 has been independently confirmed by NREL. An alternative ZnO/a-Si:H cell process with an intrinsic absorber of only 180 nm has reached 10.06 % NREL confirmed stabilized efficiencies as well. Up-scaling of such thin cells to 10x10 cm2 mini-modules has led to an aperture module efficiency of stabilized 9.20 ± 0.19 % as well independently confirmed by ESTI of JRC Ispra.

Micromorph tandem cells with stabilized efficiencies of 11.0% have been achieved on as-grown LPCVD ZnO front TCO at bottom cell thickness of just 1.3 μm in combination with the in-house developed AR concept. Applying an advanced LPCVD ZnO front TCO stabilized tandem cells of 10.6 % have been realized at a bottom cell thickness of only 0.8 μm. Implementing in-situ intermediate reflectors in Micromorph tandems on LPCVD ZnO reached in a stabilized cell efficiency of 11.3% with a bottom cell thickness of 1.6 μm.

In this paper a light-activated multiplexer/demultiplexer silicon-carbon device is analysed. An electrical model for the device operation is presented and used to compare output signals with experimental data. An algorithm that takes into accounts the voltage and the optical bias controlled sensitivities is developed. The device is a double pi'n/pin a-SiC:H heterostructure with two optical gate connections for light triggering in different spectral regions. Multiple monochromatic pulsed communication channels were transmitted together, each one with a specific bit sequence. The combined optical signal was analyzed by reading out, under different applied voltages and optical bias, the generated photocurrent across the device. Experimental and simulated results show that the output multiplexed signal has a strong nonlinear dependence on the light absorption profile, i.e. on the incident light wavelength, bit rate and intensity under unbalanced light generation of carriers. By switching between positive and negative voltages the input channels can be recovered or removed from the output signal.

We have investigated the solid nucleation mechanism in laser-quenched Si films on SiO2. Previously neglected experimental steps, consisting of BHF-etching and irradiation in vacuum, were implemented to reduce potential extrinsic influences. The resulting experimental findings and computational analysis lead us to conclude that solid nucleation consistently takes place heterogeneously at, and only at, the bottom liquid Si-SiO2 interface.

An equivalent-circuit electrical model is used to simulate the photovoltaic properties of mixed-phase thin-film silicon solar cells. Microcrystalline and amorphous phases are represented as separate parallel-connected photodiode equivalent circuits, scaled by assuming that the photodiode area is directly proportional to the volume fraction of each phase. A reasonable correspondence between experiment and simulation is obtained for short-circuit current and open-circuit voltage vs. volume fraction. However the large dip in fill-factor and reduced PV efficiency measured for cells prepared in the low-crystalline region is inadequately reproduced. It is concluded that poor PV performance in this region is not due solely to shunting by more highly-crystalline filaments, which supports the view that the low-crystalline material has transport properties inferior to either microcrystalline or amorphous silicon.

This paper reviews our research progresses of hydrogenated amorphous silicon (a-Si:H) and microcrystalline (μc-Si:H) based thin film solar cells. It coves the three areas of high efficiency, low cost process, and large-area proto-type multi-chamber system design and solar module deposition. With an innovative VHF power profiling technique, we have effectively controlled the crystalline evolution and made uniform μc-Si:H materials along the growth direction, which was used as the intrinsic layers of pin solar cells. We attained a 9.36% efficiency with a μc-Si:H single-junction cell structure. We have successfully resolved the cross-contamination issue in a single-chamber system and demonstrated the feasibility of using single-chamber process for manufacturing. We designed and built a large-area multi-chamber VHF system, which is used for depositing a-Si:H/μc-Si:H micromorph tandem modules on 0.79-m2 glass substrates. Preliminary module efficiency has exceeded 8%.

Photo-induced structural changes and defect creation are common phenomena in a large variety of polymeric and non-crystalline semiconductors. The photo-induced degradation of a-Si:H and its alloys, discovered by Staebler and Wronski in 1977, belongs to a special category with quite unique features, which so far has resisted an explanation. Part of the problem is that the near 4-fold coordinated network does not naturally form an amorphous material. It is over-constrained and forms a stress relief void structure. While reviewing the experimental evidence it will be argued that some of our commonly held views regarding the underlying mechanisms of the Staebler-Wronski effect (SWE) may have to be abandoned. First, the internal void surfaces seem to be the principal locations of the photo-structural changes. Second, non-radiative bimolecular recombinations of photo carriers do not seem to be the driving force of defect creation at helium temperatures. Alternative pathways for the photo-induced processes will be suggested.

We have examined a series of a Si,Ge:H alloy devices deposited using both RF and VHF glow discharge in two configurations: SS/n+/i (a-SiGe:H)/p+/ITO nip devices and SS/n+/i (a-SiGe:H)/Pd Schottky contact devices, over a range of deposition rates. We employed drive-level capacitance profiling (DLCP), modulated photocurrent (MPC), and transient junction photo-current (TPI) measurement methods to characterize the electronic properties in these materials. The DLCP profiles indicated quite low defect densities (mid 1015 cm-3. to low 1016 cm-3 depending on the Ge alloy fraction) for the low rate RF (∼1Å/s) deposited a-SiGe:H materials. In contrast to the RF process, the VHF deposited a-SiGe:H materials did not exhibit nearly as rapid an increase of defect density with the deposition rate, remaining well below 1017 cm-3. up to rates as high as 10Å/s. Simple examination of the TPI spectra on theses devices allowed us to determine valence band-tail widths.. Modulated photocurrent (MPC) obtained for several of these a-SiGe:H devices allowed us to deduce the conduction band-tail widths. In general, the a-Si,Ge:H materials exhibiting narrower valence band-tail widths and lower defect densities correlated with the best device performance.

Inventux Technologies AG is a high volume producer of Micromorph (a-Si:H/μc-Si:H) tandem modules. The light-induced degradation of hydrogenated amorphous silicon (a-Si:H), called Staebler-Wronski effect (SWE), limits the stabilized efficiency of a-Si:H-based solar cells. Several laboratories have reported on the development of a-Si:H with increased resistance against light-soaking. This so-called ‘protocrystalline' silicon can be grown with plasma-enhanced chemical vapor deposition (PECVD) by diluting the silane source gas with hydrogen.

The aim of the work presented in this paper was to scale-up the laboratory results on protocrystalline silicon to a size of 1.43 m2 (Gen. 5) using a process that is suitable for high volume production. We demonstrate that the strict boundary conditions regarding uniformity and growth rate, which are necessary for a production process, can be met. The reduced light-induced degradation of protocrystalline solar cells fabricated with the newly developed process is confirmed by a light-soaking experiment. As an outlook towards future work, we discuss issues related to the implementation of a protocrystalline top cell in the Micromorph tandem configuration. The challenge of choosing the right top-cell thickness is illustrated by experimental results on two tandem cells. The top cells of these tandems contain protocrystalline i-layers of different thicknesses.

Hydrogenated nanocrystalline silicon (nc-Si:H), a mixture of nanometer sized crystallites and amorphous silicon tissue, demonstrates a photoluminescence band centered at ∼ 0.7 eV, which emerges in response to annealing at an onset temperature of ∼ 200–300 °C. This temperature range correlates well with hydrogen effusion spectroscopy studies, and evidence suggests thermal liberation of hydrogen from grain boundary regions allows oxidation of crystallite surfaces during annealing. We tentatively attribute the 0.7 eV PL in nc-Si:H to deep donor defect states related to oxygen precipitates, and argue for the possible involvement of dislocations inside of crystallites to accompany these precipitates.

A new Float Foil Growth (FFG) technique has been demonstrated for growing thin Si foils from molten metal solvent, such as molten indium (In) or tin (Sn), at temperatures below 1,000°C. Si source is first dissolved to saturation (or close to saturation) in a molten metallic bath (or solvent) at a temperature T2 (T2 ≤ 1,000°C), and the molten bath is then cooled to T1, where T2 » T1. Due to lower solubility of Si at T1 than at T2, Si separates (or is driven) out of solution and, due to its much lower density than that of the molten metallic bath, it floats to the top of the melt to form a floating thin Si-foil. The thickness of the Si foil is determined primarily by T2, the dissolution temperature (i.e., Si solubility at T2), and the depth of the molten bath. This paper reports preliminary results demonstrating the utility of the FFG technique for growing Si-foils. Si foils with thickness range of 50-200μm were obtained from molten In baths. The Si foils were multicrystalline with crystalline (or grain) size of several millimeters, having a strong <111> preferred orientation. The Si-foils were very pure; with In (solvent) content as low as 14ppb. Other metallic impurities were below 0.1ppm, oxygen content was as low as 1.8ppm, and carbon content was below the detection level (50ppb). It is expected that large FFG thin Si-foils, when produced on large scale, will offer significant Si material cost and energy savings (> 80%), compared with conventional sliced Si wafers, with similar photovoltaic conversion efficiency.

In the recent years more and more theoretical and experimental evidence have been found that the hydrogen bonded to silicon in dense hydrogenated amorphous silicon (a-Si:H) predominantly resides in hydrogenated divacancies. In this contribution we will philosophize about the option that the small fraction of divacancies, missing at least one of its bonded hydrogen, may correspond to some of the native and metastable defect states of a-Si:H. We will discuss that such defect entities are an interesting basis for new and alternative views on the origin of the SWE.

Our work is aimed at enhancing the external quantum efficiency (EQE) of n-i-p photodiodes by reducing the absorption losses in the p-layer and the recombination losses in the p-i interface. We have applied boron-doped and undoped hydrogenated amorphous silicon carbon alloy (a-SiC:H) grown in hydrogen-diluted, silane-methane plasma to both the p-layer and undoped buffer layer, thus tailoring the p-i interface. The current-voltage, capacitance-voltage, and spectral-response characteristics of fabricated photodiodes are correlated with the doping level, optical band gap, and deposition conditions for a-SiC:H layers. The optimized device exhibits a leakage current of about 110 pA/cm2 at the reverse bias of 5 V, and a peak value of 89% EQE at a wavelength of 530 nm. At shorter wavelengths, the EQE decreases down to 56% at a 400 nm wavelength. Calculations of transmission/reflection losses at the front of the photodiode show that observed short-wavelength sensitivity enhancement can be attributed to improved separation of electron-hole pairs in the p-layer depletion region.

The last decade has witnessed tremendous progress in the science and technology of thin film silicon (amorphous and nanocrystalline) photovoltaic. The shipment of solar panels using this technology was about 200 MW in 2009; based on announcement of new or expanded production capacity, the shipment is projected to grow ten-times in the next 3-5 years. The key factor that will determine the wide-scale acceptance of the products will be the cost of solar electricity achieved using this technology. Efficiency of solar modules and throughput of production equipment will play a key role. In this paper, we discuss our roadmap to improve the product efficiency and machine throughput.