In our contribution we present and analyze implementation of the resistive switching structures for logic application based on Zadeh fuzzy logic. Resistive switching structures based on HfOx and TaOx were connected in an anti-serial configuration (complementary resistive switch). The complementary resistive switches integrated into logic circuit for Min-Max function implementation were analyzed using quasi-static voltage sweeps. We have shown that the accuracy of the Min/Max function determination depends on the ratio of the high and low resistivity states of the single switches. Determination of the Min/Max values is relevant only above the threshold voltage of the resistive structures. Reproducibility of the Min/Max function constructed from the resistive switching structures is demonstrated.

In this paper, the variation in device parameters is investigated with respect to temperature by considering the combination of HfO2-SiO2 on 4H-SiC n-IGBT. Two-dimensional numerical simulations using Setaurus TCAD have been performed to analyze the changes in static and dynamic characteristics. The switching waveforms have been analyzed using a clamped inductive circuit with and without HfO2. It seems that the presence of HfO2 in the dielectric stack has a considerable impact on the device turn off time.

We present some recently acquired results corresponding to the nature of the electron transport that occurs within bulk alloys of zinc-magnesium-oxide. These results are obtained using three-valley ensemble semi-classical Monte Carlo electron transport simulations. The impact that the magnesium content plays in shaping the form of the electron transport related characteristics associated with this alloy system is explored. Both steady-state and transient electron transport results are examined. The device implications of these results are then commented upon.

Organic light-emitting diodes (OLEDs) have progressively attracted generous attention because of their versatile applications in solid state lighting and full color displays. High-efficiency is crucial for OLED devices being energy saving and to have a longer lifespan. Numerous approaches have been attempted to attain high-efficiency OLEDs via newly synthesized organic materials, light-extraction structure design and energy-efficient device architectures. The organic materials used in optoelectronic devices have inherently low dielectric constant. In this work, we demonstrate a comprehensive model to quantitatively investigate the role of dielectric constant of the electron transporting material on the electric field distribution, charge drift and exciton recombination probability across the emissive layer (EML) and electron transport layer (ETL) in organic light-emitting diode via commercialized electrical simulation package SETFOS.

We report single-shot transient absorption (SSTA) measurements of an organic film of 3,3’-Diethyloxatricarbocyanine iodide (DOTCI). In SSTA, the pump-probe time delay is spatially encoded by using a tilted pump pulse. Translation of the sample during SSTA measurements averages over any spatial heterogeneity in the film. We demonstrate that exciton dynamics measured with the single-shot technique agrees with traditional transient absorption measurements of the same film. A signal-to-noise ratio of ∼40 is achieved in 10 s. The ability to measure exciton dynamics in organic films will enable future SSTA measurements of exciton dynamics during the molecular aggregation events that result in film formation.

We present on the optical and electronic properties of a fungi-derived pigment xylindein for potential use in (opto)electronic applications. Optical absorption spectra in solutions of various concentrations and in film are compared and are consistent with aggregate formation in concentrated solutions and films. In order to improve film morphology obtained by solution deposition techniques, an amorphous polymer PMMA was introduced to xylindein to form xylindein:PMMA blends. Current-voltage characteristics and hole mobilities extracted from space-charge limited currents were found to be comparable between pristine xylindein and xylindein:PMMA films. Side by side comparison of the photoresponse of pristine xylindein and xylindein:PMMA films at 633 nm revealed an increase in the photosensitivity in xylindein:PMMA films due to the improved morphology favouring enhanced charge generation.

Polarization-dependent absorption spectra of two functionalized derivatives of fluorinated anthradithiophene, diF TES-ADT and diF TDMS-ADT, were studied in the crystal phase using a Holstein-like Hamiltonian. For both molecules, the primary contribution to the lowest energy absorption was found to be the S0-S1 excitonic transition perturbed by an intermolecular coupling of 15 meV for both TES and TDMS. A secondary contribution, consistent with that from charge-transfer states, was also found. Additionally, absorption spectra were analysed when crystals were placed inside of optical microcavities formed by two metal mirrors. Cavities exhibited a primary absorption peak determined to be an enhanced absorption from the lowest-energy S0-S1 transition.

Typical electron transport (2,2′,2″-(1,3,5-benzinetriyl)-tris(1-phenyl-1-H-benzimidazole) (TPBi)) and injection (Cs2CO3) materials are successfully replaced by zirconium tetrakis(8-hydroxyquinolinolate) (Zrq4) and lithium 2-((o-tolylimino)methyl)-phenolate (EI-111) in simplified OLED (organic light-emitting diodes) processed by organic vapor phase deposition (OVPD). The performance of combining Zrq4 and EI-111 is analyzed in unipolar devices and compared to devices with configurations of Zrq4/Cs2CO3, TPBi/EI-111 and TPBi/Cs2CO3. Current density-voltage (J-V) measurements are performed and correlated to different carrier injection and transport properties. The investigated material combinations are implemented in the simplified OLED structures and compared to each other. To account for the high HOMO level of Zrq4, 5 nm of TPBi are added to confine holes and excitons in the emissive layer (EML) and to improve device performance. After tailoring the organic stack for OLED with Zrq4, a remarkable boost in device efficiency is observed. The luminous efficacy increased from 3.0 to 21.9 lm/W and the EQE from 2.1 to 11.0 % for a device with Zrq4/EI-111. Furthermore, OLED having Zrq4/Cs2CO3 show an even greater enhancement to 26.3 lm/W and 11.7 %.

The ground state structure, optical properties and charge carrier dynamics of silicon nanowire (SiNW) grown in <211> crystallographic direction is studied as a function of wavevector using density functional theory. This nanowire can be used as fundamental unit of nanoelectronic devices. The optical properties are computed under assumption of momentum conservation$\Delta \vec{k} = 0$. The on-the-fly non-adiabatic couplings for electronic degrees of freedom are obtained along the ab initio molecular dynamics nuclear trajectories, which are used as parameters for Redfield density matrix equation of motion. By investigating the photo-induced process on this nanowire, it is shown that high-energy photoexcitation relaxes to the band gap edge within 75 ps. The results of these calculations help to understand the mechanism of electron transfer process on the Si nanowire.