Nanowire-based nanocomposite materials are being developed as transparent and flexible electrodes or as stretchable conductors and dielectrics for biosensing. Here, we theoretically investigate the use of scanning dielectric microscopy (SDM) to characterize these materials in a nondestructive way, with a special focus on the achievable spatial resolution and the possibility of detection of the capacitive coupling between nearby nanowires. Numerical calculations with models involving single and multiple buried nanowires have been performed. We demonstrate that the capacitance gradient spread function of a single buried nanowire consists of a modified Lorenzianan with a cubic decay. We show that the achievable spatial resolution can be determined with good accuracy with the help of this spread function. It is shown that, in general, the spatial resolution worsens when any system parameter decreases the maximum of the nanowire spread function or increases its width, or both. Finally, we show that SDM measurements are also sensitive to the capacitive coupling between nearby nanowires. This latter result is of utmost relevance since the macroscopic electric properties of nanowire nanocomposites largely depend on the electric interaction between nearby nanowires. The present results show that SDM can be a valuable nondestructive subsurface characterization technique for nanowire nanocomposite materials.

Silver nanowire (AgNW) diameters are typically characterized by manual measurement from high magnification electron microscope images. Measurement is monotonous and has potential ergonomic hazards. Because of this, statistics regarding wire diameter distribution can be poor, costly, and low-throughput. In addition, manual measurements are of unknown uncertainty and operator bias. In this paper we report an improved microscopy method for diameter and yield measurement of nanowires in terms of speed/automation and reduction of analyst variability. Each step in the process to generate these measurements was analyzed and optimized: microscope imaging conditions, sample preparation for imaging, image acquisition, image analysis, and data processing. With the resulting method, average diameter differences between samples of just a few nanometers can be confidently and statistically distinguished, allowing the identification of subtle incremental improvements in reactor processing conditions, and insight into nucleation and growth kinetics of AgNWs.

The ability to characterize recombination and carrier trapping processes in group-III nitride-based nanowires is vital to further improvements in their overall efficiencies. While advances in scanning transmission electron microscope (STEM)-based cathodoluminescence (CL) have offered some insight into nanowire behavior, inconsistencies in nanowire emission along with CL detector limitations have resulted in the incomplete understanding in nanowire emission processes. Here, two nanowire heterostructures were explored with STEM-CL: a polarization-graded AlGaN nanowire light-emitting diode (LED) with a GaN quantum disk and a polarization-graded AlGaN nanowire with three different InGaN quantum disks. Most nanowires explored in this study did not emit. For the wires that did emit in both structures, they exhibited asymmetrical emission consistent with the polarization-induced electric fields in the barrier regions of the nano-LEDs. In the AlGaN/InGaN sample, two of the quantum disks exhibited no emission potentially due to the three-dimensional landscape of the sample or due to limitations in the CL detection.

Using in situ transmission electron microscopy, we report the observation of the melting behavior of one-dimensional nanostructures of Sn with different length/width aspect ratios. The melting of small aspect-ratio nanowires (nanorods) results in the expansion of liquid Sn along both axial and radial directions with the tendency to form an isometric or spherical particle, thereby minimizing the total surface area. For nanowires with the length/width aspect ratio of ∼10.5, perturbation along the liquid stream causes an unstable necking phenomenon and the whole wire tends to shrink into a spherical particle. In contrast, Rayleigh instability sets in for the melting of the nanowires with the length/width aspect ratio as large as ∼21, which gives rise to necking and fragmentation of the wire into particles. The amorphous native surface oxide (SnO x ) layer serves as a confinement tube and plays an important role in the melting induced morphological evolution of Sn nanowires. A thin SnO x layer is flexible with the ability to shrink or expand upon the flow of molten Sn. The increased rigidity for a thick SnO x surface layer kinetically suppresses bulging and necking formation in molten Sn nanowires.

Copper–silver core–shell nanowires were synthesized using a combination of two methods: electrodeposition in a polycarbonate membrane as a template for the synthesis of a copper core and a galvanic replacement reaction for the elaboration of a silver shell. A comparative study between aqueous and ionic liquid media was performed for the silver shell elaboration. The kinetics of the reaction in both media was monitored by using energy dispersive x-ray spectroscopy. The shape and size of the nanowires were observed by both scanning electron microscopy and transmission electron microscopy. The core–shell structure was determined by electron energy loss spectroscopy analyses for the Cu90Ag10 composition. A homogenous silver shell was formed in aqueous media. Whereas in ionic solvent, well defined silver crystals were obtained at the surface of the nanowires but without a total formation of a silver shell structure.

The kinetic and static friction forces between Al2O3 nanowires (NWs) and a Si substrate were simultaneously determined by the use of bending manipulation, which bent a NW into a “hook” shape, and then let it recover elastically. An analytical model was developed to estimate the kinetic friction force based on the hypothesis that part of the elastic energy stored in the bent NW was consumed by the work of the friction during recovering. The static friction force was also calculated using force equilibrium. Finite element analysis and experimental testing were performed to verify the analytical model. The kinetic and static friction forces per unit area obtained were in the ranges of 1.16–3.4 MPa and 0.68–2.7 MPa, respectively, which agree well with most of the values reported previously for NWs or nanoparticles on flat substrates. It was also found that the NW size had no apparent effect on the interfacial shear stress.

This work illustrates that a variety of nanowire microstructures can be obtained either by controlling the nanowire formation kinetics or by suitable thermal processing of as-deposited nanowires with nonequilibrium metastable microstructure. In the present work, 200-nm diameter Ag–Ni nanowires with similar compositions, but with significantly different microstructures, were electrodeposited. A 15 mA deposition current produced nanowires in which Ag-rich crystalline nanoparticles were embedded in a Ni-rich amorphous matrix. A 3 mA deposition current produced nanowires in which an Ag-rich crystalline phase formed a backbone-like configuration in the axial region of the nanowire, whereas the peripheral region contained Ni-rich nanocrystalline and amorphous phases. Isothermal annealing of the nanowires illustrated a phase evolution pathway that was extremely sensitive to the initial nanowire microstructure.

We discuss observations of InN nanowires (NWs) by plan-view high-resolution transmission electron microscopy (TEM). The main difficulties arise from suitable methods available for plan-view specimen preparation. We explore different approaches and find that the best results are obtained using a refined preparation method based on the conventional procedure for plan-view TEM of thin films, specifically modified for the NW morphology. The fundamental aspects of such a preparation are the initial mechanical stabilization of the NWs and the minimization of the ion-milling process after dimpling the samples until perforation. The combined analysis by plan-view and cross-sectional TEM of the NWs allows determination of the degree of strain relaxation and reveals the formation of an unintentional shell layer (2–3-nm thick) around the InN NWs. The shell layer is composed of bcc In2O3 nanocrystals with a preferred orientation with respect to the wurtzite InN: In2O3 [111] || InN [0001] and In2O3 <110> || InN< $$ 11\bar 20 $$ >.

In this study we combine scanning transmission electron microscopy, electron energy loss spectroscopy and electron magnetic circular dichroism to get new insights into the electronic and magnetic structure of LaSr-2×4 manganese oxide molecular sieve nanowires integrated on a silicon substrate. These nanowires exhibit ferromagnetism with strongly enhanced Curie temperature (Tc>500 K), and we show that the new crystallographic structure of these LaSr-2×4 nanowires involves spin orbital coupling and a mixed-valence Mn3+/Mn4+, which is a must for ferromagnetic ordering to appear, in line with the standard double exchange explanation.

Piezoresistance (PZR) is the change in the electrical resistivity of a solid induced by an applied mechanical stress. Its origin in bulk crystalline materials like silicon is principally a change in the electronic structure which leads to a modification of the effective mass of charge carriers. The past few years have seen a rising interest in the PZR properties of semiconductor nanostructures, motivated in part by claims of a giant PZR (GPZR) in silicon nanowires more than two orders of magnitude bigger than the known bulk effect. This review aims to present the controversy surrounding claims and counterclaims of GPZR in silicon nanostructures by summarizing the major works carried out over the past 10 years. The main conclusions to be drawn from the literature are that (i) reproducible evidence for a GPZR in ungated nanowires is limited; (ii) in gated nanowires, GPZR has been reproduced by several authors; (iii) the giant effect is fundamentally different from either the bulk silicon PZR or that resulting from quantum confinement, the evidence pointing to an electrostatic origin; (iv) released nanowires tend to have slightly larger PZR than unreleased nanowires; and (v) insufficient work has been performed on bottom-up grown nanowires to be able to rule out a fundamental difference in their properties when compared with top-down nanowires. On the basis of this, future possible research directions are suggested.

To determine whether plastic-hardening behavior occurs in metal nanowires, an atomistic simulation was performed to investigate the tension process in a bicrystal Cu nanowire. The results indicate that bicrystal Cu nanowires exhibit strain-hardening behavior, unlike their single-crystal counterparts. The strain-hardening behavior is related to the orientation of two crystal grains, and the number of atoms determines whether strain-hardening behavior occurs in the asymmetrically tilted bicrystal Cu nanowires. Strain hardening occurs in almost bicrystal Cu nanowires with different orientation angles. The initial yield stress is determined by the grain whose orientation angle is closer to 45° among the two crystal grains, resulting in a high value of the tilting tendency factor, and thus making it easier to generate slip.

Focused ion beam is a powerful method for cross-sectional transmission electron microscope sample preparation due to being site specific and not limited to certain materials. It has, however, been difficult to apply to many nanostructured materials as they are prone to damage due to extending from the surface. Here we show methods for focused ion beam sample preparation for transmission electron microscopy analysis of such materials, demonstrated on GaAs–GaInP core shell nanowires. We use polymer resin as support and protection and are able to produce cross-sections both perpendicular to and parallel with the substrate surface with minimal damage. Consequently, nanowires grown perpendicular to the substrates could be imaged both in plan and side view, including the nanowire–substrate interface in the latter case. Using the methods presented here we could analyze the faceting and homogeneity of hundreds of adjacent nanowires in a single lamella.

Ionic liquids are well suited to the electrochemical synthesis of freestanding metallic nanowires as well as macroporous metals and semiconductors. Such materials are potentially interesting for future generation Li-ion batteries. As the energy density of current Li-ion batteries barely exceeds 0.15 kWh/kg (in contrast to the 12 kWh/kg of hydrocarbons), there is a need for new anode and cathode materials if electrically driven cars are to have more than a 150 km cruising range at an affordable price. Freestanding aluminum nanowires and macroporous aluminum are easily feasible from AlCl3-based ionic liquids and show promising charge/discharge behavior even with ionic liquids as electrolytes. The challenges and the potential to make nanowires or macroporous structures of semiconductors (Si, Ge) are also briefly discussed.

A sample preparation method is described for enabling direct correlation of site-specific plan-view and cross-sectional transmission electron microscopy (TEM) analysis of individual nanostructures by employing a dual-beam focused-ion beam (FIB) microscope. This technique is demonstrated using Si nanowires dispersed on a TEM sample support (lacey carbon or Si-nitride). Individual nanowires are first imaged in the plan-view orientation to identify a region of interest; in this case, impurity atoms distributed at crystalline defects that require further investigation in the cross-sectional orientation. Subsequently, the region of interest is capped with a series of ex situ and in situ deposited layers to protect the nanowire and facilitate site-specific lift-out and cross-sectioning using a dual-beam FIB microscope. The lift-out specimen is thinned to electron transparency with site-specific positioning to within ∼200 nm of a target position along the length of the nanowire. Using the described technique, it is possible to produce correlated plan-view and cross-sectional view lattice-resolved TEM images that enable a quasi-3D analysis of crystalline defect structures in a specific nanowire. While the current study is focused on nanowires, the procedure described herein is general for any electron-transparent sample and is broadly applicable for many nanostructures, such as nanowires, nanoparticles, patterned thin films, and devices.

Semiconductor nanowires, by definition, typically have nanoscale cross-sectional dimensions, with lengths spanning from hundreds of nanometers to millimeters. These subwavelength structures represent a new class of semiconductor materials for investigating light generation, propagation, detection, amplification, and modulation. After more than a decade of research, nanowires can now be synthesized and assembled with specific compositions, heterojunctions, and architectures. This has led to a host of nanowire photonic and electronic devices, including photodetectors, chemical and gas sensors, waveguides, LEDs, microcavity lasers, and nonlinear optical converters. Nanowires also represent an important class of nanostructure building blocks for photovoltaics as well as direct solar-to-fuel conversion because of their high surface area, tunable bandgap, and efficient charge transport and collection. This article gives a brief history of nanowire research for the past two decades and highlights several recent examples in our lab using semiconductor nanowires and their heterostructures for the purpose of solar energy harvesting and waste heat recovery.

SiC nanowires (NWs) designed from selected bulk polytypes are investigated using quantum mechanics-based simulations (both ab initio and semiempirical methods), and their structure–property relationships examined vis-à-vis their size, shape, and orientation. It is found that 2H–SiC NWs of hexagonal morphology oriented along the <0001> direction are the most stable ones compared to NWs designed using other bulk polytypes (e.g., 3C, 4H, or 6H) and other morphologies (round, square, rhombus, etc.) for diameters with 1 nm < d < 14 nm. Based on the electronic density calculations, it is found that 2H–SiC <0001> NWs exhibit semiconductor-like characteristics (akin to their bulk counterparts), even when their diameters approach 1 nm. On the other hand, SiC NWs designed from 3C, 4H, and 6H bulk polytypes, regardless of their morphology, exhibit gapless features for diameters less than 3.5 nm. Undoubtedly, these novel properties of SiC NWs can be exploited in the fabrication of nanoscale devices.

The twin interface structure in twinning superlattice InP nanowires with zincblende structure has been investigated using electron exit wavefunction restoration from focal series images recorded on an aberration-corrected transmission electron microscope. By comparing the exit wavefunction phase with simulations from model structures, it was possible to determine the twin structure to be the ortho type with preserved In-P bonding order across the interface. The bending of the thin nanowires away from the intended ⟨110⟩ axis could be estimated locally from the calculated diffraction pattern, and this parameter was successfully taken into account in the simulations.

An electron diffraction technique called D-STEM has been developed in a transmission electron microscopy/scanning transmission electron microscopy (TEM/STEM) instrument to obtain spot electron diffraction patterns from nanostructures, as small as ∼3 nm. The electron ray path achieved by configuring the pre- and postspecimen illumination lenses enables the formation of a 1–2 nm near-parallel probe, which is used to obtain bright-field/dark-field STEM images. Under these conditions, the beam can be controlled and accurately positioned on the STEM image, at the nanostructure of interest, while sharp spot diffraction patterns can be simultaneously recorded on the charge-coupled device camera. When integrated with softwares such as GatanTM STEM diffraction imaging and Automated Crystallography for TEM or DigistarTM, NanoMEGAS, the D-STEM technique is very powerful for obtaining automated orientation and phase maps based on diffraction information acquired on a pixel by pixel basis. The versatility of the D-STEM technique is demonstrated by applying this technique to nanoparticles, nanowires, and nano interconnect structures.