The microwave energy-harvesting (MEH) and microwave power transfer (MPT) technologies have become the most emerging areas of research nowadays. The microwave rectifier circuit is the bottleneck of both the MEH and MPT systems. The efficiency of the system depends on the power conversion efficiency (PCE) of the rectifier. Due to the recent advancement of the fifth-generation communication system, it is desirable to propose an efficient rectifier operating at sub-6 GHz 5G bands. A dual-band rectifier circuit is designed and demonstrated for MEH/MPT purposes, specifically at sub-6 GHz 5G frequency bands. The dual-band matching is achieved by using a stepped impedance transmission line. The rectifier covers N78 (3.3–3.6 GHz) and N79 (4.8–5.0 GHz) bands. Peak PCE of 67.6% @ 3.5 GHz and 56.8% @ 4.9 GHz are achieved. For validation purpose, the rectifier is fabricated and characterized and measured results show good agreement with simulated results.

This paper presents compact rectenna arrays for ambient RF energy harvesting on the 2.45 GHz ISM band. The arrays are based on four and nine series-connected rectenna cells. Each cell is composed of a stacked fractal antenna and an RF-to-dc conversion circuit. The antenna is a compact third Koch fractal shape, fed by a coaxial probe for more compactness. The conversion circuit is a full-wave rectifier with a differential output, each DC polarity is provided by a two-stage Dickson voltage multiplier. Measurement results show a significant increase of the output DC voltage for the one, four, and nine cells rectenna arrays. They provide, for power density of 1.7 μW/cm2, an output DC voltage of 0.9, 2.2, and 4.1 Volts, respectively. The 9 cells rectenna array is used in a remote supply experiment of a temperature and acceleration wireless sensor, where the data are transmitted via a Bluetooth low energy link to a distant smartphone every 1 min.

In this paper, we present the electromagnetic modeling of a performance-enhanced planar Schottky diode for applications in terahertz (THz) frequencies. We provide a systematic simulation approach for analyzing our Schottky diode based on finite element method and lumped equivalent circuit parameter extraction. Afterward, we use the developed model to investigate the effect of design parameters of the Schottky diode on parasitic capacitive and resistive elements. Based on this model, device design has been improved by deep-trench formation in the substrate and using a closed-loop junction to reduce the amount of parasitic capacitance and spreading resistance, respectively. The results indicate that cut-off frequency can be improved from 4.1 to 14.1 THz. Finally, a scaled version of the diode is designed, fabricated, and well characterized to verify the validity of this modeling approach.

Voltage doubler rectifiers are usually applied to systems with high voltage and low current requirement. An X band voltage doubler rectifier has been developed with 72% conversion efficiency. To the best of our knowledge, the obtained rectifying efficiency is the maximum reported to date at X band with Schottky diodes. The working characteristics of the diodes in the voltage doubler rectifier are analyzed in detail. Closed-form equations of diode input impedance and rectifying efficiency are presented and validated using Advanced Design System simulations. The matching network design of the proposed rectifier is based on the closed-form equations. The preliminary rectifying efficiency is predicted by the closed-form equations as well. Measured and simulated results are in good agreement.

This paper presents a study of Schottky diode rectenna (rectifying antenna) for radiofrequency (RF) energy-harvesting systems. These rectennas are suitable for wireless sensors with the rechargeable battery technology especially at low-power densities. A rectifying circuit is proposed with single high responsivity Schottky diode for RF–DC conversion. A matching circuit is optimized to improve not only the power transfer between the antenna and the diode, but also to reject harmonic signals. The radiating part is a monopole antenna, with a large bandwidth in the frequency domain and an omni-directional radiation pattern in the azimuthal plane. We show that antenna frequency response takes part in the improvement of the efficiency. The rectifier is integrated with the antenna on a printed circuit board, leading to 30% of size reduction with the same performance. The aim is to reach the highest efficiency with a single tone signal and a compact rectenna. This rectenna was simulated using both Agilent ADS and Ansoft HFSS software. An output DC voltage of 210 mV was measured inside an anechoic chamber which received a single tone signal of 2 µW/cm2 power density. The highest efficiency of 34% was obtained at a power density of 1.3 µW/cm2.

This paper describes a compact and efficient rectenna based on a dual-diode microstrip rectifier at 2.45 GHz. This circuit has been designed and optimized using a global analysis technique which associates electromagnetic and circuit approaches. Due to the differential topology of the rectifier, neither input low-pass filter nor via-hole connections are needed. This makes the structure more compact reducing losses. Measurements of a single rectenna element show 83% efficiency over an optimal load of 1050 Ω at a power density of 0.31 mW/cm2. To increase the received RF power and then increase dc power over the load, identical rectennas have been interconnected to form arrays. Two and four elements rectenna arrays, connected either in parallel or in series, have been developed. It was shown that by properly choosing the interconnection topology and the optimal output load, higher dc voltage or dc power have been obtained. The four-element series-connected array can provide experimentally up to 3.85 times output dc voltage compared to the single rectenna. The parallel-connected rectenna arrays generate approximately 2.15 and 3.75 times output dc power for two and four elements, respectively.

A new type of spectrum analyzer using RF interferometry is presented. The stationary wave integrated Fourier transform spectrometer is dedicated to the measurement of transient wideband signals. The spectrometer is mobile and cheap. It consists of spatial samplers placed along a waveguide ended by a short circuit. The standing wave caused by the short circuit is sampled and the spectrum is obtained by an FFT computation. A 0.3–5 GHz analyzer was built as a proof-of-principle demonstration and an application to RF dosimetry is shown.

The potential profiles along the channel of Al/Poly(3-hexylthiophene), PHT film/Au diode from Al to Au electrodes have been measured directly using nanomanipulator with potential probing tips. The steep potential cliff is observed at the interface of Al/PHT, indicating the existence of depletion layer with higher resistance than that of bulk region. For the forward bias, the resistance at the depletion layer decreased significantly and the potential gradient in the PHT bulk region is observed above the onset bias of 1 V. It is found that the contact resistance of PHT/Au is unexpectedly large in spite of the ohmic behavior and also for Al/PHT at forward bias. The effect of light on the depletion layer will be also mentioned. It is stressed that the contact resistances of PHT and metals are significantly important to improve the performance of organic electronics devices.