Selectively absorbing properties of indium tin oxide(ITO) thin film were characterized in UV-VIS-NIR wavelength regions. Sodium diffusion from glass pane had a bad influences on the properties of ITO layers. So silica-zirconia barrier layers were formed by sol gel dip coating. ITO films on buffer layered glass pane were formed by sol gel dip coating. Transmittance and reflectivity dependence on the thickness of barrier layer and ITO coating layers were studied by measuring sheet resistance and UV-VIS-NIR spectroscopy.

Transparency at 550 nm wavelegth and selective reflectivities were important to apply to passive solar collectors. In single barrier layer and six-fold ITO coated films, good selectivities were obtained. Homogeneity of indium tin precursor coating solution was important. Atmosphere condition (humidity, temperature), dip and drawing conditions were also additional factors for uniformity of films.

Lithium ion-implantation was performed on ZnSe layers which were grown on GaAs substrates by MBE. Strong photoluminescence emission due to acceptor-bound excitons was observed from samples implanted with lithium doses of up to 1015cm−2 and annealed under optimized conditions for rapid thermal annealing. Lithium implantation results in low damage to the ZnSe as well as the formation of a shallow acceptor level. Thermal degradation of both implanted and unimplanted epilayers caused by the rapid thermal annealing was inviestigated at various annealing temperatures. We find that, under certain annealing conditions, unimplanted samples show greater thermal degradation than lithium implanted samples. The photoluminescence spectrum of an unimplanted sample annealed at 800°C shows considerable degradation; however, a lithium-implanted sample annealed at the same temperature still shows strong luminescence in the excitonic region.

We have fabricated ZnSe p-n junction LEDs with a new structure of Pt/p-ZnSe/n-ZnSe/n-GaAs. The dopant used for n-type ZnSe was Cl, and p-type ZnSe:N was formed by nitrogen radical doping. The LEDs exhibited good rectification properties. We have found that electroluminescence at 77 K was dominated by recombination emission between free electrons and acceptor holes at 2.705 eV. Increasing the temperature, recombination emission between donor electrons and free holes dominated blue bandedge emission region.

P-type conduction in bulk ZnSe has been achieved using 1×1016 cm−2 nitrogen (N) ionimplantation followed by a high temperature rapid thermal annealing. Room temperature Hall effect measurements of the sample show that the hole concentration is ∼1×1017 cm−3, and the mobility is ∼30 cm2/V-s. Photoluminescence (PL) measurements were performed to study the optical behavior of the samples, and the results show that the ion implantation damage can be partially repaired by thermal annealing at 900°C or higher. Thermal degradation and recovery of the ion-implantation damage were studied as a function of the annealing temperature.

The properties for members of a new class of nonlinear optical (NLO) materials which stoichiometrically incorporate organic and inorganic constituents into a single crystalline lattice are reported. Recent results for our synthetic, crystal growth, and optical studies suggest that a number of these relatively transparent “semiorganic” compounds have significant second and/or third order NLO responses and often display favorable crystal growth morphologies.

The prototype material of this class, zinc tris(thiourea) sulfate, or ZTS, has a UV cutoff at about 325 nm, can be readily grown to cm3 sizes, and has been shown to be a highly efficient Type II frequency doubler for 1064 nm Nd:YAG laser radiation. ZTS also possesses a moderate third order nonlinear optical response (ca. 0.1 × CS2) which occurs on at least a picosecond time scale as determined by degenerate four-wave mixing (DFWM) experiments at 532 nm.

Refractive index, second harmonic generation, and DFWM data for a number of these new compounds are presented.

Optical second harmonic generation in epitaxial layers of CdxZn1−xS and CdxZn1−xS:ZnS and CdS:CdxZn1−xS strained layer superlattices which had been removed from their substrates has been investigated. Some evidence for resonant enhancement of the second order non-linear susceptibility has been found for one sample where the onset of optical absorption was at photon energies close to that of the second harmonic radiation.

An optoelectronic memory element was constructed from two photoconducting (PC) and two electroluminescent (EL) devices. Between one EL device and one PC device an optical feedback was provided, so that these two components constituted a bi-stable system. Experimental details of preparation of the PC-EL type thin film systems and results of investigations of the memory element are presented.