The hexagonal boron nitride (h-BN) as a wide bandgap semiconductor is an attractive material for deep ultraviolet (DUV) generation. In this paper we study the prospect of using the stacking hexagonal boron nitride nanosheets (h-BNNS) for generating DUV emission by impact excitation in alternating current driven thin electroluminescence devices (ACTEL) based on BN phosphors having different morphologies. A theoretical approach considered is based on the impact excitation model for generating DUV from stacking h-BNNS under a high electric field. It was found that in the h-BNNS with a thickness of 90 nm biased at 3.33×109 V/m, the quantum yield can reach to 86.8%, and the power conversion efficiency of 1.68%. To achieve the same quantum yield and power conversion efficiency for the ACTEL based on h-BN single crystal, the active phosphor layer should be 2 μm thick when biased at 1.5×108 V/m.

Nanoparticles of high-refractive-index materials like semiconductors can achieve confinement of light at the subwavelength scale because of the excitation of Mie resonances. The nanostructures out of high-refractive-index materials have extensively been studied theoretically and realized in experiments exploring a wide range of photonic applications. Recently, transition metal dichalcogenides (TMDCs) from the family of van der Waals layered materials have been shown to exhibit tailorable optical properties along with high refractive index and strong anisotropy. We envision that TMDCs are a promising material platform for designing metasurfaces and ultra-thin optical elements: these van der Waals materials show a strong spectral response on light excitations in visible and near-infrared ranges, and metasurface properties can be controlled by nanoantenna dimensions and their arrangement. In this work, we investigate a periodic array of disk-shaped nanoantennas made of a TMDC material, tungsten disulfide WS2, placed on top of a silicon layer and oxide substrate. We show that the nanostructure resonance in TMDC disk-shaped nanoantenna array can be controlled by the variation in silicon layer thickness and have a dependence on the presence of index-match superstrate cover. We also report on the spectral features in absorption and reflection profiles of the same structure with different surrounding index.

Hot carrier based methods constitute a valuable approach for efficient and silicon compatible sub-bandgap photodetection. Although, hot electron excitation and transfer have been studied extensively on traditional materials such as Au and Ti, reports on alternative materials such as titanium nitride (TiN) are rare. Here, we perform hot hole photodetection measurements on a p-Si/metal thin film junction using Ti, Au and TiN. This material is of interest as it constitutes a refractory alternative to Au which is an important property for plasmonic applications where high field intensities can occur. In contrast to Au, a TiN/Si junction does not suffer from metal diffusion into the Si, which eases the integration with current Si-fabrication techniques. This work shows that a backside illuminated p-Si/TiN system can be used for efficient hot hole extraction in the IR, allowing for a responsivity of 1 mA/W at an excitation wavelength of 1250 nm and at zero bias. Via a comparison between TiN and other commonly used materials such as Au, the origin of this comparably high photoresponse can be traced back to be directly linked to a thin TiO2-x interfacial layer allowing for a distinct hot-hole transfer mechanism. Moreover, the fabrication of TiN nanodisk arrays is demonstrated which bears great promise to further boost the device efficiency.

Zinc Oxide (ZnO) has been shown to exhibit semiconducting and piezoelectric dual properties. This has led to a large commercial demand on ZnO for optoelectronics that operate at the blue-ultraviolet regions. Consequently, varying techniques have been devised to create different nanostructures of ZnO. Here, the single step synthesis of ZnO nanostructures was performed on Si(100) substrates with a thin ZnO seed-layer. A modified chemical vapor deposition (CVD) method was developed to accomplish the structure formation. Sb doping of the structures in the gas phase was performed to study its effects on structure and optoelectronic properties. Different structures were realized including nanofilaments, nanoparticles, microflowers, nanorods, nanotubes, and nanocolumns. Only nanorods/columns, and nanotubes are shown in this work. Morphology was examined using scanning electron microscopy (SEM). Energy-dispersive X-ray spectroscopy (EDS) and X-ray powder diffraction (XRD) were used for structural studies. Optoelectronic properties were explored using room-temperature photoluminescence (PL) spectroscopy. PL data show the relative decrease in the number of defects and increase in crystal quality upon increasing reaction time. Significant structural effects were also observed upon doping. Some structural defects might be attributed to the diffusion of Sb ions into the lattices of ZnO, replacement of Zn by Sb, and ionic radii difference. These stacking faults are most likely the reason behind the dominance and broadening of DLE peak.

Bolometric arrays dominate in commercial terahertz and millimeter wave imagers. Bolometers tend to be slow and require an operating bias that increases the power budget. This paper presents first results on antenna-coupled thermo-electric junction detectors, a potentially attractive alternative to microbolometers. The nanoscale junctions have small thermal mass and can be much faster than bolometers. These junctions are heated by currents excited in spectrally-selective antennas and generate a voltage based on the Seebeck effect without any externally applied power. A pixel comprising a series array of antenna coupled junctions with peak response at 7.5 THz (40 μm wavelength) is designed and experimentally demonstrated. Responsivity of 5 MV/W, 500 Hz chopping frequency, and D* of 3.5 x 1010 Jones are demonstrated.

The realization of an electrically driven organic solid-state laser is an ambitious but highly desirable goal. Many obstacles need to be solved before a working device can be realized. One of the most challenging tasks is an incorporation of intracavity metal contacts, which, on the one hand, would not substantially degrade optical properties of the whole device and, on the other hand, would ensure sufficient current density to reach lasing. In this paper, we present different contact compositions aiming to realize high-quality intracavity metal contacts. We build a top contact consisting of 0.5 nm of aluminum and 4 nm of silver which has a conductivity of 1.9 × 107 (Ω/m) and is not increasing the optical lasing threshold of an organic microcavity. To get a better understanding of charge carriers influencing the device performance, we have performed a set of measurements, where a hybrid OLED–MC device was excited both optically and electrically at the same time. These experiments suggest that the charge carriers do not degrade electrical performance, at least for current densities in the range of A/cm2. Moreover, our observations suggest that, in some cases, simultaneous optical excitation can contribute to more efficient electrical pumping of the OLED-MC device.

Doping, as a primary technique to modify semiconductor transport, has achieved tremendous success in the past decades. For example, boron and phosphorus doping of Si modulates the dominant carrier type between p-type and n-type, serving as the backbone for the modern microelectronic technologies. Doped III-V semiconducting systems exhibit phenomenal optoelectronic properties. Magnesium doped gallium nitride plays an important role to build efficient blue light-emitting diode (LED), which won Nobel Prize in physics in 2014. The rise of two-dimensional (2D) materials sheds light on their potential in next generation electronic, optoelectronic, and quantum applications. These properties can further be controlled via doping of 2D materials, however, many challenges still remain in this field. Here, we present a rapid review on the recent achievements and challenges in the metastable and substitutional doping of 2D materials, followed by providing an outlook on integrating 2D materials into more advanced electronic architectures.

As the global energy and environmental preservation needs continue to grow, the demand for renewable and clean energy conversion materials and devices continues to rise as well. Thermoelectric (TE) materials and devices can convert waste heat into electricity and therefore it can be a potential renewable and clean energy source. Organic and polymeric materials typically exhibit low electrical conductivities, high Seebeck coefficients, and orders of magnitude lower thermal conductivities as compared to their inorganic counterparts. However, the electrical conductivities of organic/polymeric materials are tunable via doping or molecular engineering. In this study, a series of carefully doped P3HT composites are systematically evaluated for heat as well as light modulated devices. Along with a high absorption coefficient, when the polymer film thickness is less than the penetration depth of the incoming photons, the photo effects are significant and could be very useful for light modulations of thermoelectric functions. With further systematic studies and a better understanding of the mechanisms behind the photo-Seebeck effect, the development of potential high-efficiency multi-function materials and devices appears feasible.

Ultraviolet light-emitting diodes (UVLEDs) with phosphor materials have considerable advantages over traditional illumination devices. Doping with rare earth ions can modify the optical spectrum of phosphor materials, but rare earths are very expensive. Thus, replacing rare earths with a common material would provide a great potential for the wide application in the future. In this study, we discovered that a novel type of semiconductor nanometre powder, namely manganese cobalt nickel copper oxide (MCNC), is able to emit blue-green wavelength spectrum when exited by 365-400nmUVLED. In addition, MCNC shows less attenuation of luminescence efficiency than other UVLED phosphor materials doped with rare earths with temperature increase. It is thus concluded that MCNC is a promising low-cost material to replace rare earths to adjust the optical spectrum wavelength of UVLED. This is the first time that nano-scale MCNC is reported to possess the property to change the optical spectrum wavelength of UVLED. This provides a new mechanical and nanometer phosphor material without rare earth doping to shift the wavelength spectrum.

Polymeric conjugated materials are convenient for developing future soft-material-based semiconductors, conductors, electronic and optoelectronic devices due to their inherent features. Similar to their inorganic counterparts, the addition of certain minority molecules, or dopants, to polymeric conjugated materials can significantly alter the electronic and optoelectronic properties of the host conjugated polymers or composites. This allows for tunability of a variety of electronic and optoelectronic applications. One way to improve device performance is through the process of thermal annealing. Annealing allows for a polymer matrix to self-assemble into a lower energy state, which leads to an increase in crystallinity and higher charge mobility. Previous research does not explicitly define how dopants can affect this process. This study involves an evaluation of the effects of annealing with doped P3HT films to demonstrate changes in optoelectronic and electronic properties.

Chemical doping of organic semiconductors is a common technique used to increase the performance numerous organic electronic and optoelectronic devices. Tetrafluoro-tetracyanoquinodimethane (F4-TCNQ) is one of the most widely known p-dopants having the properties necessary to act as a strong electron acceptor. Despite its strong electron accepting abilities, F4-TCNQ is extremely expensive, making it less than ideal for large-area applications. Here, we introduce a small molecule called Tetracyanoindane (TCI) as a potential p-dopant. Widely known for its role in the field of non-linear optics, its high polarizability arises from the addition of four cyano-groups, which are electron withdrawing groups. The four cyano-groups are also seen in the F4-TCNQ molecule and contributes to the withdrawing strength alongside the four fluorine atoms present. We hypothesize that TCI could have similar accepting strength to F4-TCNQ and could potentially replace it as a cheaper alternative. In this study, Cyclic Voltammetry (CV), UV-Visible-Near Infrared Spectroscopy (UV/Vis/NIR), Photoluminescence (PL), Current-Voltage (IV) measurements analysis was conducted to compare the accepting strength of TCI and F4-TCNQ. Then, the two molecules were added to Poly-3-hexy-thiophene (P3HT) to observe how readily they dope the organic semiconductor.

Coupling semiconductors with electrochemical processes can lead to unusual materials, and attractive, practical device configurations. This work examines the reaction mechanism for single-step electrodeposition approach that creates device quality copper-indium-selenide (CISe) films with either polycrystalline or nanocrystalline morphologies on Cu and steel foils, respectively. The polycrystalline CISe film grows from In3+/Se4+ solution on Cu foil as Cu→ CuxSe→ CuInSe2; it may be used in standard planar pn devices. The nanocrystalline CISe film grown from Cu+/In3+/Se4+ solution follows the CuSe(In)→ CuInSe2→ CuIn3Se5 sequence. The latter approach leads to naturally ordered, space-filling nanocrystals, comprising interconnected 3-dimensional network of sharp, abrupt, p-CISe/n-CISe bulk homojunctions with extraordinary electro-optical attributes. Sandwiching these films between band-aligned contact electrodes can lead to high performance third generation devices for solar cells, light emitting diodes or photoelectrodes for fuel cells. Both approaches produce self-stabilized CISe absorbers that avoid recrystallization steps and can be roll-to-roll processed in simple flexible thin-film form factor for easy scale-up.

Large area lighting OLEDs manufactured in a Roll-to-Roll (R2R) fashion enable the well-longed production capability with considerably high throughput based on flexible substrates, hence largely reduced OLED manufacturing cost. This paper will outline the present status of R2R OLED fabrication on ultra-thin glass with the focus on transparent OLED devices and how to perform segmentation by printing of silver- and dielectric pastes. Ultra-thin glass (UTG) is laminated on a PET film to avoid fabrication interruptions when glass cracks occur during the Roll-to-Roll process. The R2R fabricated flexible OLEDs also show key-values comparable to conventional OLEDs fabricated on small rigid glass in lab-scale.

Substantial increase of output current, and Ion / Ioff ratio for sub-7nm low power CMOS transistors, can be accomplished using a novel optoelectronic technology, which is 100% compatible with existing CMOS process flow. For RF or mixed signal ASICs, adding photonic components may improve the cut-off frequency, and reduce series resistance. Products that utilize power regulating devices, such as power MOSFETs, will benefit from the optoelectronic configuration to achieve much lower Rdson and high voltage at the same time. For semiconductor memories, such as DRAM or FLASH, the photonic technique may reduce the ERASE / WRITE / access time and improve the reliability.

An emerging family of materials—metal halide perovskites (MHPs)—have made incredible achievements in optoelectronics in the past decade. Owing to its potential role in optoelectronic properties, the ferroic state of MHPs has been investigated by lots of researchers. Here, we review the literature regarding investigations into possible ferroic behaviors in MHPs. We summarize the recent discoveries of ferroic twin domains in MHPs. We examine the ferroelasticity and the ferroelectricity of these twin domains. Several properties relevant to the twin domains are critically analyzed, including crystallographic structure, mechanical variation, chemical variation, etc. Finally, we discussed the effects of these domains on materials’ optoelectronic properties and their potential roles in photovoltaic action.

Present work reports the growth of Strontium Barium Niobate (Sr0.75 Ba0.25 Nb2 O6, SBN 75)thin films using Pulsed laser deposition (PLD) technique for possible realization of electrically tunable modulators. Structural and optical properties of grown SBN75 thin film were investigated indicating the growth of high quality polycrystalline and optically transparent. Prism coupling technique was further utilized for coupling the incident laser light λ = 633 nm with the grown SBN75 thin film. The guided EM radiation could be further coupled with the electric field for the realization of EO modulator.

Silicon nanowires (SiNWs) show unique optoelectronic properties such as band gap, radiative and nonradiative relaxations. In this research, the optoelectronic properties of <211> SiNW are calculated by combining time-dependent density matrix methodology. Description of photo-excited dynamics processes is enabled by computing “on–the–fly” nonadiabatic couplings (NAC) between electronic and nuclear degrees of freedom using density functional theory (DFT). The dynamics of electronic degrees of freedom is propagated by the reduced density matrix with Redfield equation of motion. Oscillator strengths are used to compute radiative relaxation and to generate time resolved photoluminescence (PL) spectrum. Analysis of the simulated nonradiative decay shows that high-energy photoexcitation relaxes to the band gap edge on the order of 1 ps. We also simulate time-resolved emission spectra of the <211> SiNW that reveals optical emissions above the optical band gap. These emission features are attributed to the interband transitions. The results of this study can be useful for the material choice for optoelectronic applications.

Optoelectronic nanoscale devices have wide applications in chemical, biological, and medical technologies. Improving the performance efficiency of these devices remains a challenge. Performance is mainly dictated by the structure and characteristics of the semiconductor materials. Once a nanodevice is fabricated, its efficiency is determined. The key to improving efficiency is to control the interfaces in the device. In this article, we describe how the piezo-phototronic effect can be effectively utilized to modulate the band at the interface of a metal/semiconductor contact or a p–n junction to enhance the external efficiency of many optoelectronic nanoscale devices such as photodetectors, solar cells, and light-emitting diodes (LEDs). The piezo-phototronic effect can be highly effective at enhancing the efficiency of energy conversion in today’s green and renewable energy technology without using the sophisticated nanofabrication procedures that have high cost and complexity.

This article discusses recent studies of piezotronics and piezo-phototronics of two-dimensional (2D) materials. Two-dimensional semiconductor materials have demonstrated excellent electronic and optoelectronic properties, and these ultrathin materials are candidates for next-generation devices. Among 2D semiconductors, transition-metal dichalcogenides in particular have large in-place piezoelectricity due to the noncentrosymmetry along the armchair direction. A strong coupling of piezoelectric and semiconducting properties has been reported for Schottky contacts and p–n junctions, even in single-layer materials. Since the carrier concentration of ultrathin 2D materials can be easily modulated by external piezocharges, layered composites of ferroelectric/2D materials also show promising piezotronic and piezo-phototronic properties.

The piezophotonic effect is the coupling between piezoelectric properties and photoexcitation, where strain-induced piezopotential modulates and controls the relevant optical process. Specifically, metal ions as activators are capable of responding to photoexcitation and subsequent emission of light, also called mechanoluminescence, in general, and piezoluminescence specifically for piezoelectrics. These phenomena are helpful for understanding the materials fundamentals and conceiving widespread device applications. In this article, we briefly introduce the physical mechanisms of piezophotonics, including piezoluminescence. Selected host materials and metal-ion activators are described for demonstrating the piezophotonic effect. We provide a unified profile and recent prototypical demonstrations of light emission triggered by mechanical stimuli. The devices based on these materials offer the advantages of remote detection, nondestructive analysis, and repeatability, hence they are promising candidates for applications in stress sensing, structural health diagnosis, three-dimensional handwriting, magnetic-optical sensing, energy harvesting, biomedicine, novel light sources, and displays.