The effects of CaTiO3 (CT) and BaZrO3 (BZ) modification upon the crystal structure and electromechanical properties of lead-free Bi0.5Na0.5TiO3–SrTiO3 piezoelectric ceramics were compared within a doping range of 0–4 mol%. The different effects of CT and BZ modification upon the phase transition are clearly observed in the polarization and strain hysteresis loops. The CT-modified specimens maintain strong ferroelectricity without any abnormal enhancement in the electric field-induced strain. However, the addition of as little as 1 mol% BZ induces a transition from a nonergodic relaxor phase to an ergodic relaxor phase, thus resulting in disruption of the ferroelectric order and the generation of a high field-induced strain. The present authors believe that the substitution of large ions (such as Zr4+) into the B-sites, rather than the A-sites, of the Bi0.5Na0.5TiO3-based ceramics plays a significant role in the phase transition behavior.

Potassium and cerium co-doped Bi4Ti2.86W0.14O12 ceramics with a formula of (K0.5Ce0.5)xBi4−xTi2.86W0.14O12 (abbreviated as KC100x-BITW, x = 0, 0.02, 0.04, 0.06, 0.08, 0.1) were prepared by a conventional solid-state reaction method. The effect of (K0.5Ce0.5) complex doping amount on the structure, dielectric, and piezoelectric properties of the KC100x-BITW ceramics was investigated. X-ray diffraction results indicated that the KC100x-BITW ceramics are Aurivillius-type phase with the bismuth layer structure. (K0.5Ce0.5) complex addition first increases and then decreases the grain size which can be observed by scanning electron microscopy. With the increase of (K0.5Ce0.5) complex doping amount, the Curie temperature (TC) was slightly decreased from 632 to 608 oC. The dielectric and piezoelectric properties were optimized in KC100x-BITW ceramics with x = 0.08 as follows: d33 = 24 pC/N, kp = 8.2%, Qm = 6766, εr = 135 (@100 kHz), tanδ = 0.28% (@100 kHz), Tc = 611 oC, and resistivity ρ = 2.9 × 106 Ω cm at 500 oC, indicating that the KC100x-BITW ceramics are suitable for high-temperature piezoelectric sensing applications.

A new series of ternary perovskite 0.975(0.8Bi1/2Na1/2TiO3–0.2Bi1/2K1/2TiO3)–0.025Bix/3Mgy/3Nbz/3O3 (BNT–BKT–BMN, BMN-xyz) ceramics were designed and synthesized. The effect of the element ratio in the doping component BMN on the strain, ferroelectric, piezoelectric, and dielectric properties of the BNT–BKT matrix were studied. The BMN-430 composition without Nb element exhibits the typical features of non-ergodic relaxor, which is characterized by a higher piezoelectric coefficient d33 and a butterfly-shaped strain curve with negative strain. The introduction of trace Nb can significantly enhance the ergodicity of the system, reflecting in the high positive strain response and strain coefficient $\lpar {d_{33}^\ast \gt 750\;{\rm pm/V}} \rpar$ of BMN-321 composition. In contrast, there is no significant difference in the properties between the presence and absence of Mg element. The temperature-dependent electrical behaviors of BMN-xyz ceramics were analyzed based on impedance spectroscopy. This study may be helpful to the design of the chemical modification strategy for the BNT-based relaxor ferroelectrics.

Biomagnetic field sensors based on AlN/FeCoSiB magnetoelectric (ME) composites desire a resonant frequency that can be precisely tuned to match the biomagnetic signal of interest. A tunable mechanical resonant frequency is achieved when ME composites are integrated onto shape memory alloy (SMA) thin films. Here, high-quality c-axis growth of AlN is obtained on (111) Pt seed layers on both amorphous and crystallized TiNiCu SMA thin films on Si substrates. These composites show large piezoelectric coefficients as high as d33,f= 6.4 pm/V ± 0.2 pm/V. Annealing the AlN/Pt/Ta/amorphous TiNiCu/Si composites to 700 °C to crystallize TiNiCu promoted interdiffusion of Ti into the Ta/Pt layers, leading to an enhanced conductivity in AlN. Depositing AlN onto already crystalline TiNiCu films with low surface roughness resulted in the best piezoelectric films and hence is found to be a more desirable processing route for ME composite applications.

Ab initio calculations are performed to investigate the structural, vibrational, electronic, and piezoelectric properties of functionalized single layers of TaS2. We find that single-layer TaS2 is a suitable host material for functionalization via fluorination and hydrogenation. The one-side fluorinated (FTaS2) and hydrogenated (HTaS2) single layers display indirect gap semiconducting behavior in contrast to bare metallic TaS2. On the other hand, it is shown that as both surfaces of TaS2 are saturated anti-symmetrically, the formed Janus structure is a dynamically stable metallic single layer. In addition, it is revealed that out-of-plane piezoelectricity is created in all anti-symmetric structures. Furthermore, the Janus-type single-layer has the highest specific heat capacity to which longitudinal and transverse acoustical phonon modes have contribution at low temperatures. Our findings indicate that single-layer TaS2 is suitable for functionalization via H and F atoms that the formed, anti-symmetric structures display distinctive electronic, vibrational, and piezoelectric properties.

Piezoelectric single crystals based on the perovskite ferroelectric system (K,Na)NbO3 have been widely investigated over the past 20 years due to large piezoelectric coefficients, high transition temperatures, low density, and the nontoxic chemical composition. Various crystal growth methods were examined, including high-temperature solution growth, solid-state crystal growth, Bridgman–Stockbarger method, and the floating zone method. Increased understanding of the crystal growth process and post-growth treatments resulted in improved crystal quality and larger sizes. Recently, crystals with high piezoelectric and electromechanical coupling coefficients exceeding 1000 pC/N and 0.90, respectively, were reported. Moreover, their large potential for high-frequency ultrasonic medical imaging was demonstrated. This work provides a review of the development of piezoelectric (K,Na)NbO3-based single crystals, including their growth, defect chemistry, domain structures, electromechanical properties, and applications. Approaches for reducing growth defects, controlling point defects, and domain engineering are discussed. The remaining open issues are presented and an outlook on the future is provided.

A liquid-state pyroelectric energy harvester is described and a remarkable capacity to convert a thermal gradient into electrical energy is demonstrated.

Increasing the sustainability of energy generation can be pursued by harvesting extremely low enthalpy sources: low temperature differences between cold and hot reservoirs are easily achieved in every industrial process, both at large and small scales, in plants as well as in small appliances, vehicles, natural environments, and human bodies. This paper presents the assessment and efficiency estimate of a liquid-state pyroelectric energy harvester, based on a colloid containing barium titanate nanoparticles and ferrofluid as a stabilizer. The liquid is set in motion by an external pump to control velocity, in a range similar to the one achieved by Rayleigh–Bénard convection, and the colloid reservoir is heated. The colloid is injected into a Fluorinated Ethylene Propylene pipe where titanium electrodes are placed to collect electrical charges generated by pyroelectricity on the surface of the nanoparticles, reaching 22.4% of the ideal Carnot efficiency of a thermal machine working on the same temperature drop. The maximum extracted electrical power per unit of volume is above 7 mW/m3 with a ΔT between electrodes of 3.9 K.

Flexible and stretchable capacitive pressure sensors have been developed in recent years due to their potential applications in health monitoring, robot skins, body activity measurements and so on. In order to enhance sensor sensitivity, researchers have changed structure of the dielectric of parallel plate capacitive sensor . Here we enhance the sensor sensitivities by changing electrode composition and explore the use of a woven electrode structure sensor with silver coated nylon yarn and EcoflexTM. The woven structure enhanced sensitivity 2.3 times relative to a simple cross-grid geometry (sensitivity was 0.003 kPa-1). Furthermore, it is also observed that the sensor with the woven electrode also had better repeatability and showed less creep than a device using carbon black electrodes. The woven structure of the electrodes enabled the device to be compliant, despite the presence of the stiff nylon fibres – thereby enabling good sensitivity without the creep seen in softer electrodes.

Transport mechanisms in structurally ordered piezoelectric Ca3TaGa3Si2O14 (CTGS) single crystals are studied in the temperature range of 1000-1300 °C by application of the isotope 18O as a tracer and subsequent analysis of diffusion profiles of this isotope using secondary ion mass spectrometry (SIMS). Determined oxygen self-diffusion coefficients enable calculation of oxygen ion contribution to the total conductivity, which is shown to be small. Since very low contributions of the cations have to be expected, the total conductivity must be dominated by electron transport. Ion and electron conductivities are governed by different mechanisms with activation energies (1.9±0.1) eV and (1.2±0.07) eV, respectively. Further, the electromechanical losses are studied as a function of temperature by means of impedance spectroscopy on samples with electrodes and a contactless tone-burst excitation technique. At temperatures above 650 °C the conductivity-related losses are dominant. Finally, the operation of CTGS resonators is demonstrated at cryogenic temperatures and materials piezoelectric strain constants are determined from 4.2 K to room temperature.

Wave energy converters have been developed and commercialized in past decades; they have now faced numerous challenges of large volume sizes, environmental hazards, and high costs of deployment, components and maintenance. To address these challenges and make a wave energy converter practically available for various applications at a reasonable cost, we have developed a soft wave energy harvester that integrated low-cost soft material structures and piezoelectric-based Macro Fiber Composite (MFC). This integrated soft wave energy converter has a straightforward fabrication process and structure that can harvest energy from a broad working frequency of waves. The innovative design combined low-cost and commercially available materials and formed a harvester that addressed the aforementioned problems of commercially available harvesters. Additionally, the low cost and simple design are scalable for large energy conversion in the future. The energy conversion performance of the proposed platform has been investigated in a wave flume with low-frequency incoming waves (<2Hz). The soft energy conversion platform is hung like a curtain and produces a maximum 487nW. Also, the low cost and durable encapsulation can protect the electrical properties of MFCs and circuits, and a single harvester can last through all experiment steps without any degradation, which was more than 170 hours.

The homo- and heteroepitaxial deposition of LGS (langasite, La3Ga5SiO14) thin films on LGS single crystals, Si and SiO2 substrates by pulsed laser deposition (PLD) is demonstrated. PLD is performed at substrate temperatures up to about 700 °C and results initially in Ga deficient films. Two strategies of counterbalancing the Ga deficit are realized. First, off-stoichiometric targets with an enhanced Ga content are applied. Secondly, an increased oxygen partial pressure up to about 6 Pa is used during deposition to suppress evaporation of Ga suboxides. Combining these adaptions results in the growth of stoichiometric LGS thin films. Films deposited on LGS substrates do not show any additional X-ray diffraction reflexes nor broadening of the peaks with respect to the single crystalline substrates. Therefore, the homoepitaxial approach can be considered successful. The deposition on Si and SiO2 substrates under the same conditions leads to the formation of polycrystalline films. However, post-annealing at 800 °C increases crystallinity. Stoichiometry and homogeneous distribution of La, Ga and Si cations are confirmed by secondary neutral mass spectrometry (SNMS). The composition remains constant within the film, implying stable process parameters.

By using systematic first-principles calculation, we found that AlTlO3 compound of LiNbO3 structure shows large piezoelectric constants e33 of 10.7 C/m2 and d33 of 56.7 pC/N. These piezoelectric constants are approximately six times larger than those of LiNbO3. AlTlO3 is predicted to be stabilized above 7 GPa. On the other hand, the calculated dielectric constant ε33 shows diverged behavior around 2 GPa. This result indicates that AlTlO3 can be quenchable. Decomposition of the predicted piezoelectric constant revealed that the large piezoelectricity of AlTlO3 originates from the Tl displacement in accordance with external perturbation, which drives the ferroelectric soft mode of the corresponding paraelectric phase. However, the energy difference between the ferroelectric and paraelectric phases was small, approximately 1 meV/f.u. These insights suggest that fluctuation between ferroelectric and paraelectric phases causes large piezoelectricity in AlTlO3.

In this paper, we report on the flexible thin film piezoelectric nanogenerators based on two-dimensional ZnO nanoflakes (NFs) directly deposited onto flexible polyethylene terephthalate (PET) using a simple sonochemical reaction in aqueous solution at room temperature. Our sonochemical synthesis method is a rapid, highly stable, low-cost, and reproducible method, which can be performed at ambient conditions. These advantages of the sonochemical method allow the synthesis of many different ZnO nanostructures. The structural investigations using scanning electron microscopy (SEM), atomic force microscopy (AFM), and X-ray diffraction (XRD) indicated that the ZnO NFs grew with high level of crystallinity and without any thermal damage on the substrates. The fabrication of these device provides a promising solution for developing flexible and self-powered electronic devices particularly wearable and implantable sensors. This ZnO-NFs based nanogenerator provides 62 mV of potential and significant reproducibility having with lower p-value (0.0212).

Optoelectronic nanoscale devices have wide applications in chemical, biological, and medical technologies. Improving the performance efficiency of these devices remains a challenge. Performance is mainly dictated by the structure and characteristics of the semiconductor materials. Once a nanodevice is fabricated, its efficiency is determined. The key to improving efficiency is to control the interfaces in the device. In this article, we describe how the piezo-phototronic effect can be effectively utilized to modulate the band at the interface of a metal/semiconductor contact or a p–n junction to enhance the external efficiency of many optoelectronic nanoscale devices such as photodetectors, solar cells, and light-emitting diodes (LEDs). The piezo-phototronic effect can be highly effective at enhancing the efficiency of energy conversion in today’s green and renewable energy technology without using the sophisticated nanofabrication procedures that have high cost and complexity.

Third-generation semiconductors, such as ZnO and GaN, exhibit strong piezoelectric polarization due to the lack of inversion symmetry. The piezotronic effect observed in these semiconductors was proposed for tuning carrier transport in electronic devices by utilizing the induced piezoelectric potential as a virtual gate. This novel concept allows effective interactions between micro-/nanoelectronic devices and external mechanical stimuli. Piezotronics provide a promising approach for designing future electronic devices beyond Moore’s Law with potential for developing smart sensors, environment monitoring systems, human–machine interaction elements, and other transducers. In this article, we review recent progress in piezotronics using one-dimensional materials, heterojunctions, and large-scale arrays. We provide guidance for future piezotronic devices based on these materials.

This article discusses recent studies of piezotronics and piezo-phototronics of two-dimensional (2D) materials. Two-dimensional semiconductor materials have demonstrated excellent electronic and optoelectronic properties, and these ultrathin materials are candidates for next-generation devices. Among 2D semiconductors, transition-metal dichalcogenides in particular have large in-place piezoelectricity due to the noncentrosymmetry along the armchair direction. A strong coupling of piezoelectric and semiconducting properties has been reported for Schottky contacts and p–n junctions, even in single-layer materials. Since the carrier concentration of ultrathin 2D materials can be easily modulated by external piezocharges, layered composites of ferroelectric/2D materials also show promising piezotronic and piezo-phototronic properties.

Piezotronics can not only afford control of electronic transport over potential barriers, but the attendant mechanical stress can also influence various physical properties of piezoelectric semiconductors. Stress significantly affects the optical properties of these materials as well as their response toward the chemical environment and magnetic fields. This article focuses on the utilization of piezotronics with regard to these physical parameters for sensor applications. Stress sensors, optical sensors (especially in the ultraviolet range), and sensors for chemicals in gas and liquid phases or magnetic fields via coupled magnetostrictive layers are discussed. The benefits of piezotronics for sensors are highlighted by discussing respective figures of merit.