A review is given on the use of ion-beam-assisted deposition (IBAD) to the growth of films within the B–C–N system, both as monolithic and multilayer coatings. The films considered include elemental, binary, and ternary materials like pure carbon (diamond-like carbon), pure boron (B), boron nitrides (c‑BN, h‑BN, and BNx), boron carbides (B4C and BxC), carbon nitrides (CNx), and ternary BxCyNz. The use of non-reactive IBAD with argon ions and reactive IBAD with nitrogen ions is discussed in connection with control of the composition, physical and chemical sputtering, film density, internal stress, and promotion of metastable phases.

Transparent conductive oxides (TCOs) are degenerately doped compound semiconductors with wide band gaps (Eg > 3 eV), which are used as transparent electrodes in optoelectronic devices. Reports on the influence of negative ions on the electrical properties of TCO films are reviewed and compared with our results. It was reported that the radial resistivity distributions depend (i) on the excitation mode of the magnetron (direct current or radio frequency), (ii) on the erosion state of the sputtering target, and (iii) on the density of the ceramic targets. This can be explained by the fact that the negative ions in magnetron discharges (in our case O−) are generated at the target surface and accelerated toward the growing films. Their energy and their radial distribution depend on the discharge voltage and the shape of the emitting surface, i.e., of the erosion groove. Ways for reducing the effect of negative ion bombardment are discussed.

High-power impulse magnetron sputtering (HiPIMS) is a promising sputtering-based ionized physical vapor deposition technique and is already making its way to industrial applications. The major difference between HiPIMS and conventional magnetron sputtering processes is the mode of operation. In HiPIMS the power is applied to the magnetron (target) in unipolar pulses at a low duty factor (<10%) and low frequency (<10 kHz) leading to peak target power densities of the order of several kilowatts per square centimeter while keeping the average target power density low enough to avoid magnetron overheating and target melting. These conditions result in the generation of a highly dense plasma discharge, where a large fraction of the sputtered material is ionized and thereby providing new and added means for the synthesis of tailor-made thin films. In this review, the features distinguishing HiPIMS from other deposition methods will be addressed in detail along with how they influence the deposition conditions, such as the plasma parameters and the sputtered material, as well as the resulting thin film properties, such as microstructure, phase formation, and chemical composition. General trends will be established in conjunction to industrially relevant material systems to present this emerging technology to the interested reader.

The Bosch process is a high-speed, deep reactive ion etching technology for silicon, which has both excellent flexibility and selectivity. For better understanding and control of the time evolution of the feature profile during the Bosch process, an accurate, predictive, and fast simulation tool would be useful. In this article, a simplified model for three-dimensional simulation of the Bosch process is proposed. Etching is modeled by an isotropic etching rate superposed by an anisotropic term. For the passivation cycle, a perfect conformal deposition is assumed corresponding to a constant deposition rate. Level set method was used for tracking the surface evolution. Since the etching and deposition rates are the model input parameters which are not computed, the computational time is significantly reduced. Calculation results presented here illustrate some typical applications of the Bosch process.

Results are presented for modeling the growth of TiO2 on the rutile (110) surface. We illustrate how long time scale dynamics techniques can be used to model thin film growth at realistic growth rates. The system evolution between deposition events is achieved through an on-the-fly Kinetic Monte Carlo method, which finds diffusion pathways and barriers without prior knowledge of transitions. We examine effects of various experimental parameters, such as substrate bias, plasma density, and stoichiometry of the deposited species. Growth of TiO2 via three deposition methods has been investigated: evaporation (thermal and electron beam), ion-beam assist, and reactive magnetron sputtering. We conclude that the evaporation process produces a void filled, incomplete structure even with the low-energy ion-beam assist, but that the sputtering process produces crystalline growth. The energy of the deposition method plays an important role in the film quality.

We developed a polyatomic cluster ion beam system for materials processing, and polyatomic clusters of materials such as alcohol and water were produced by an adiabatic expansion phenomenon. In this article, cluster formation is discussed using thermodynamics and fluid dynamics. To investigate the interactions of polyatomic cluster ions with solid surfaces, various kinds of substrates such as Si(100), SiO2, mica, polymethyl methacrylate, and metals were irradiated by ethanol, methanol, and water cluster ion beams. To be specific, chemical reactions between radicals of polyatomic molecules and surface Si atoms were investigated, and low-irradiation damage as well as high-rate sputtering was carried out on the Si(100) surfaces. Furthermore, materials processing methods including high-rate sputtering, surface modification, and micropatterning were demonstrated with ethanol and water cluster ion beams.

Thick (>150 μm) beryllium coatings are studied as an ablator material of interest for fusion fuel capsules for the National Ignition Facility. DC magnetron sputtering is used because of the relative controllability of the processing temperature and energy of the deposits. However, coatings produced by DC magnetron sputtering leak the fuel gas D2. By using ion-assisted DC magnetron, sputtered coatings can be made that are leak-tight. Transmission electron microscopy (TEM) studies revealed microstructural changes that lead to leak-tight coating. Ultrasmall angle x-ray spectroscopy is used to characterize the void distribution and volume along the spherical surface along with a combination of focused ion beam, scanning electron microscope, and TEM. An in situ multibeam optical stress sensor was used to measure the stress behavior of thick beryllium coatings on flat substrates as the material was being deposited.

Porous platinum thin films were prepared by thermal decomposition at temperatures from 25 to 675 °C of platinum oxide films deposited by a pulsed reactive sputtering technique. The samples’ chemistry and structure were investigated by x-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS), and x-ray absorption near edge structure (XANES), showing that the decomposition of the oxide begins as low as 400 °C and follows a sigmoidal trend with increasing annealing temperature. In the XRD spectra, only an amorphous-like signature was observed for temperatures below 575 °C, while Pt 4f XPS showed that the deposited oxide was a mixture of PtO2 and PtO. Pt-L3 edge XANES and Pt 4f XPS spectra showed that the Pt concentration and electronic structure are predominant for temperatures equal to or above 575 °C. The morphologies of the films were investigated by the area-perimeter method from atomic force microscopy and scanning electron microscopy (SEM) images, indicating that the surfaces exhibit a combination of Euclidian and fractal characteristics. Moreover, the thermal evolution of these characteristics indicates the agglomeration of the grains in the film as observed by SEM.

The residual stress in Al–Cu–Fe–B quasicrystalline thin films has been characterized by x-ray diffraction and the curvature method. Films with thicknesses in a range from 0.55 to 2.6 μm were deposited using magnetron sputtering on Si(100) substrates maintained at a temperature of 560 °C. It is found that the tensile stress in uncracked films as determined by the curvature method is close to that measured by a modified sin2ψ method using main diffraction peaks of the icosahedral structure and corresponds approximately to 1.1 GPa. This value is close to that of the thermal stress estimated from the mismatch between thermal expansion coefficients of the film and substrate, suggesting that thermal stress is the main source of residual stress. Increasing film thickness results in the development of cracks and partial delamination of the film, accompanied by the sudden decrease of the stress. The fracture toughness of the quasicrystalline films is estimated between 1.5 and 1.9 MPa.

Unbalanced magnetron sputtering (UBMS) is suitable for the preparation of hard and hydrogen-free diamond-like carbon (DLC) films. Since those films generally suffer from internal stresses and bad adhesion, the addition of a methane source offers two advantages: (i) the control of the film properties by variation of the hydrogen content and (ii) a pretreatment of methane plasma source ion implantation (PSII), which results in a gradient carbon layer within the substrates, ensuring the adhesion of the subsequently deposited DLC films. PSII and UBMS were combined to prepare DLC films on stainless steel substrates and silicon wafers. Different amounts of methane were added to the working gas, argon, to investigate the effect of the hydrogen content on the film properties, i.e., hardness, adhesion, and friction coefficient. Composition and chemical structure of the films were investigated by depth profiling (secondary-ion mass spectrometry) and Raman spectroscopy. Smooth adhesive films could be obtained with the lowest friction coefficient for small additions of methane as a hydrogen source during the sputtering process.

TiN–indium composite films were deposited by simultaneous sputtering of titanium and indium in a mixed Argon/Nitrogen atmosphere and characterized for tribological applications. Film compositions showed a nonlinear behavior as a function of sputter gun power. For films deposited at −50 V bias, and containing less than 29 relative percent indium, the films had a face centered cubic structure, but at higher indium contents (63–82%) the structure was not consistent with either TiN or indium. At −150 V bias, the films had either the TiN structure, In-type structure, or a mixture of the two. Atomic force microscopy images showed the formation of semispherical drops on the surface of the samples deposited at −50 V bias voltage, whereas at −150 V bias voltage the samples exhibited a smooth coating surface with occasional ellipsoidal blisters. Nanoindentation test of the films shows low hardness (5–12 GPa), but tribological testing showed that frictional behavior can be improved by moderate heating before testing, suggesting indium segregation to the surface.

Transparent conducting oxide films are usually several 100-nm thick to achieve the required low sheet resistance. In this study, we show that the filtered cathodic arc technique produces high-quality low-cost ZnO:Al material for comparably smaller thicknesses than achieved by magnetron sputtering, making arc deposition a promising choice for applications requiring films less than 100-nm thick. A mean surface roughness less than 1 nm is observed for ZnO:Al films less than 100-nm thick, and 35-nm-thick ZnO:Al films exhibit Hall mobility of 28 cm2/Vs and a low resistivity of 6.5 × 10−4 Ωcm. Resistivity as low as 5.2 × 10−4 Ωcm and mobility as high as 43.5 cm2/Vs are obtained for 135-nm films.

Optical emission spectroscopy (OES) was used to study plasmas generated by a novel plasma-enhanced linear antennas microwave chemical vapor deposition system for nanocrystalline diamond (NCD) growth in gas mixtures of H2 + CH4 + CO2. Atomic hydrogen intensities were investigated for pulsed plasmas and continuous wave (CW) mode plasmas. OES was used to study the effect of pressure (0.38–2 mbar), microwave pulse frequency (3.8–25 kHz), and total gas flow (125–1000 sccm). By using the Boltzmann plot for atomic hydrogen line intensities, plasma electron temperatures for pulsed and CW plasmas were calculated. During experiments, NCD films were deposited, which were investigated by secondary electron microscopy and Raman spectroscopy in terms of surface crystalline morphology and nondiamond carbon content. NCD films produced in high pulse frequency plasmas show low sp2 content (less than 5%) and homogenous crystalline structure with only a small amount of crystalline defects.