Tungsten wire for incandescent lamp filaments must operate at high temperatures and for long times. To meet these requirements, the grain morphology of the wire must be controlled to reduce the propensity for grain boundary sliding. The morphology is a function of the distribution of very small pockets of potassium in the wire and the mechanical processing from ingot to wire. The behavior of the filament is directly related to the grain morphology. This paper describes the mechanism by which the potassium is incorporated into and distributed in the ingot. The elongation and spheroidization of the bubbles during hot rolling and swaging are also examined and related to the grain morphology of wire. Some indications of the relationship between grain morphology and filament behavior are also given.

Recently acoustic emission (AE) techniques have been used to study crack propagation in materials. The application of these techniques to heterogeneous, quasi-brittle materials such as concrete requires a better understanding of how the signal generated from a microfracture is transformed due to wave propagation and due to the transducer response. In this study, piezoelectric transducers were calibrated using displacement transducers. The validity of an elastodynamic Green's function approach was examined for cement-based materials. The acoustic emission source was characterized using moment tensor analysis. Acoustic emission measurements were analyzed for center-cracked-plate specimens of mortar and concrete. It was observed that, as expected, the dominant mode of cracking was mode I (tensile). However, mode II (shear) and mixed mode cracks also occurred, perhaps due to grain boundary sliding and interface debonding. Microfractures appear to localize prior to critical crack propagation. Mode I cracks generally required more energy release than mode II and a smaller inclusion provided a stronger interface bond than the larger ones.

We have prepared a series of synthetic n-type pyrite (FeS2) crystals by chemical vapor transport and high temperature solution growth. These and natural crystals were characterized with respect to Hall mobility, carrier concentration, and conductivity, and chemically analyzed by mass spectroscopy and atomic emission spectroscopy. The results are compared in detail to previous work on natural crystals. Conductivity and carrier concentration in our measurements varied between 0.05 and 3.5 (Ω cm)−1 and between 6.9·1015 and 5.4·1017 cm−3, respectively. The peak mobilities have values ranging from 100 to 2000 cm2/Vs. We find that sulfur deficiency and a number of impurity elements, such as Si, Cu, and Al, can qualitatively account for the trends in the electronic properties.

The photoluminescence spectra of polycrystalline diamond films prepared by filament assisted chemical vapor deposition are dominated by a defect band with a strong zero phonon line near 1.68 eV and weak phonon replicas at lower energies. The 1.68 eV line is blucshifted from the 1.675 eV zero phonon line associated with the neutral vacancy in bulk diamond. The line shape and position of the 1.68 eV line are shown to depend on substrate material (Si, Mo, Ni). The 1.68 eV emission for Ni and Mo substrates is interpreted in terms of the stress shifted and broadened neutral vacancy emission. The broader 1.68 eV line observed for Si substrates may indicate the additional effects of Si absorption by the diamond films. Films prepared by an oxygen-acetylene flame technique exhibit two additional luminescence bands with zero phonon lines at 1.95 and 2.16 eV. These lines have been tentatively assigned to nitrogen-vacancy complexes. The temperature dependence (6 K–300 K) of the luminescence of a free-standing diamond film, which had been deposited on a molybdenum substrate, is comparable to similar observations reported for bulk diamond. We have also observed a strong dependence of the PL spectra radially across a given combustion film and associated this with details of the flame chemistry.

We have produced thin photoluminescent films of Eu-doped Y2O3 (Y2O3: Eu) by low-pressure metalorganic chemical vapor deposition (MOCVD). Yttrium and europium β-diketonate precursors are thermally decomposed in a hot-walled MOCVD reactor in the presence of oxygen at a total reactor pressure of 1 Torr. The films are microcrystalline and photoluminescent as-deposited and contain <1 at.% of carbon contamination. Subsequent annealing at 1200°C in air enhances and stabilizes the luminescence. We have measured the photoluminescent lifetimes of the MOCVD films as a function of temperature for the Eu+35D1 ⇉ 7F1 and 5D0 ⇉ 7F2 transitions using excimer laser excitation at 248 nm. We present a kinetic model which can account for the observed emission lifetimes from 20–1000°C.

The chemical composition and structure of MoS2 solid lubricant films are intimately related to their friction and wear characteristics. We have conducted an x-ray photoelectron spectroscopy (XPS) study of 1-μm thick radio frequency (rf)-sputter-deposited MoS2 films to determine the chemical state of the films, focusing on the role of oxygen impurities. Concentrations of chemisorbed and bulk species were determined from the Mo 3d, S 2p, and O 1s peak shapes and intensities after annealing the films to temperatures from 425 to 975 K. Films deposited on substrates that were at ∼345 K [ambient temperature (AT) films] and on substrates heated to ∼525 K [high temperature (HT) films] both had ∼10% oxygen within the bulk of the films. The relative areas and shapes of the XPS peaks for the HT films at all annealing temperatures were consistent with the formation of a MoS2−xOx solid solution, where O atoms were probably substituted into S sites in the 2H–MoS2 crystal lattice. In AT films, this phase composition was stable only for annealing temperatures ≥725 K, in agreement with previous studies of the changes in crystal structure of AT films with annealing. The results are discussed in terms of previous studies of the structure and composition of sputter-deposited MoS2 films.

This review summarizes the results of the joint Japanese (Central Research Institute of Electric Power Industry, CRIEPI, Tokyo), Swiss (National Cooperative for the Storage of Radioactive Waste, NAGRA, Baden), Swedish (Swedish Nuclear Fuel and Waste Management Company, SKB, Stockholm) international ‘JSS’ project on the determination of the chemical durability of the French nuclear waste borosilicate glass, which was completed in 1988. Radioactive and nonradioactive glass specimens were investigated. A data base was created with results from glass corrosion tests performed with different water compositions, pH values, temperatures, sample surface areas (S), solution volumes (V), and flow rates. Glass corrosion tests were performed with and without bentonite and/or steel corrosion products present. Variation of the glass composition was taken into account by including the borosilicate glass ‘MW’ in the investigations, formulated by British Nuclear Fuels, plc. An understanding was achieved of the glass corrosion process in general, and of the performance of the French glass under various potential disposal conditions in particular. A special effort was made to establish a corrosion data base, using high S/V ratios in the experiments in order to understand the glass durability in the long term.

The question of stability of a planar solid-liquid interface in undercooled pure and alloy melts has been reconsidered without the restrictive assumption of no heat flow in the solid made in earlier works. The modified analysis indicates that provided the thermal gradient on the solid side of the interface, Gs, is positive, stability can be achieved in an undercooled alloy melt for growth rates R>Ra, whereas a recent analysis by Trivedi and Kurz, which assumes Gs = 0, suggests that stability is possible only if R>Ra + Rat. Here Ra is the familiar absolute stability limit of Mullins and Sekerka and Rat, is the absolute stability limit in an undercooled pure melt, as identified by Trivedi and Kurz. The absolute stability criterion for steady-state planar growth in an undercooled alloy melt is thus the same as derived earlier by Mullins and Sekerka for directional solidification. Relaxing the restrictive assumption of Gs = 0 also reveals that there is a regime of stability for low growth rates and low supercoolings. Stability is possible under these conditions if Gs>0, and the bath undercooling ΔTb < ΔTO + ΔTh/2, where ΔTO is the freezing range of the alloy and ΔTh is the hypercooling limit for the pure melt. For large supercoolings, Gs < 0, and the interface will be unstable with respect to large wavelength perturbations, even if R > Ra + Rat.

Absorption and cathodoluminescence spectra have been recorded for single crystals of diamond and polycrystalline films of diamond, grown by microwave-assisted chemical vapor deposition (CVD) using methane and hydrogen. The investigation has been carried out to see to what extent the properties of CVD diamond are similar to those of conventional diamond, and to what extent they are unique. Studies have been made of the as-grown material, which has not been intentionally doped, and also samples that have been subjected to radiation damage and thermal annealing. The single crystals grown using methane concentrations of 0.5 to 1.0% exhibit bright blue “band A” emission and also intense edge emission, similar to the cathodoluminescence spectra of some natural type IIa diamonds. This implies that the crystals are relatively free from structural and chemical defects, a conclusion which is reinforced by the absence of any zero-phonon lines in the absorption spectra of crystals which have been subjected to radiation damage and annealing at 800 °C. Before radiation damage the spectrum does, however, reveal an absorption which increases progressively to higher energies, and which may be associated with sp2-bonded carbon. The Cathodoluminescence spectra after radiation damage indicate that the crystals contain some isolated nitrogen, and the detection of H3 luminescence, following thermal annealing at 800 °C, demonstrates for the first time that these samples contain small concentrations of nitrogen pairs. All of the polycrystalline films, grown using methane concentrations between 0.3 and 1.5%, have an absorption which increases progressively to higher energies, and which again is attributed to sp2-bonded carbon. This absorption is stronger in the films grown using higher methane concentrations. Films grown at a methane concentration of 0.3% also exhibit bright blue cathodoluminescence, although the edge emission is undetectably weak. The use of higher methane concentrations produces films with evidence in the cathodoluminescence spectra of nitrogen + vacancy and nitrogen + interstitial complexes, as well as optical centers unique to CVD diamond. One particular defect produces an emission and absorption line at 1.681 eV. By implanting conventional diamonds with 29Si ions it has been confirmed that this center involves silicon, and it has been shown that the 1.681 eV luminescence is relatively more intense in implanted diamonds which have a high concentration of isolated nitrogen.

The adhesion of diamond films deposited by microwave plasma-enhanced CVD on various substrates can be quantitatively determined by an indentation method. The friction behaviors of diamond-coated cemented carbides sliding against a brass ring were studied. The wear resistance of the diamond-coated cemented carbide inserts and the commercial inserts with the other ceramic coatings were compared and directly evaluated by turning tests. Effects of the coating conditions, the substrate materials, and the surface pretreatments of the substrate on adhesion, friction, and wear properties are discussed.

Using an are-discharge method, we deposited a diamond-like carbon film 600 nm thick on hardened steel. Characterization of the film was carried out with Raman spectroscopy. In dry sliding wear and friction tests, with a hardened steel pin as a counterpart, we obtained a friction coefficient between 10000 and 20000 cycles, with the maximum value of 0.18. The value decreased to 0.12 after about 100000 cycles. We obtained a wear coefficient of 7 × 10−17 m3/mN. A transfer layer formed on the pin during sliding and probably had the dominating effect on the tribological behavior. We observed in nanoindentation measurements that the film softened in a wear track during the first 20000 cycles. Although fracture pits on the wear track occurred, fracture is not the dominant failure mechanism of these films. Degradation of good tribological properties was caused mainly by partial wear-through of the film after 370000 cycles and by a subsequent redeposition of the transfer film on the wear track during prolonged sliding.

Diamond-like carbon, or DLC, films, prepared by the rf plasma decomposition of acetylene, have been deposited at substrate temperatures of 100 to 250 °C, with the substrate at a negative bias of 80 V dc. The DLC films have been annealed in vaccum at temperatures up to 600 °C for 3–4 h. The optical properties of the as-deposited and annealed films have been characterized by ellipsometry and Fourier transform infrared spectroscopy. The wear resistance of the thin DLC films and their friction coefficients have been characterized by a specially designed tribotester. The stresses in the films have also been determined. No significant differences were found between the index of refraction and IR absorption spectra of the as-deposited films, or films annealed at up to 390 °C. The DLC films begin losing hydrogen after annealing above 390 °C and only sp2 bond carbon is observed after annealing at 590 °C. The wear behavior of the as-deposited films was identical for all deposition temperatures. DLC films deposited at 250 °C were more stable and could withstand higher annealing temperature than films deposited at lower temperatures, and remained wear resistant after anneling at 390 °C.

Amorphous carbon films were deposited on glass by dc magnetron sputtering from a graphite target in mixtures of argon and hydrogen. Hydrogen flow and other parameters affected the optical and mechanical properties of these films. Increasing hydrogen content caused the average visible transmittance to vary from 16% to 86% for 500-Å thick films. Maximum compressive stress and hardness occur between 0 and 1% hydrogen flow, resulting in rapid delamination. Low sputtering power moderately increases transmittance and hardness while relieving stress. Transparency is induced in both the high-hydrogen and low-power films by formation of sp3 C–C bonds. In the case of the hydrogenated films, however, a softer polymeric structure is formed.

Thin films of amorphous carbon (a–C) and amorphous hydrogenated carbon (a–C:H) were prepared using magnetron sputtering of a graphite target. The chemical structures of the films were characterized using electron energy loss spectroscopy (EELS) and Raman spectroscopy. The mass density, hardness, residual stress, optical band gap, and electrical resistivity were determined, and their relation to the film's chemical structure are discussed. It was found that the graphitic component increases with increasing sputtering power density. This is accompanied by a decrease in the electrical resistivity, optical band gap, mass density, and hardness. Increasing the hydrogen content in the sputtering gas mixture results in decreasing hardness (14 GPa to 3 GPa) and mass density, and increasing optical band gap and electrical resistivity. The variation in the physical properties and chemical structures of these films can be explained in terms of the changes in the volume of sp2-bonded clusters in the a–C films and changes in the termination of the graphitic clusters and sp3-bonded networks by hydrogen in the a–C:H films.

Diamond films, ranging in thickness to approximately 35 μm, were grown on Si(100) substrates using hot-filament-assisted CVD. Two different CH4:H2 ratios were employed during deposition, and the effects on the film morphology and ultralow-load indentation hardness and modulus were investigated. Films deposited from a single, linear filament exhibited a nonuniform deposition thickness profile that can be described by a simple exponential function. Films deposited at lower methane concentrations, 0.11% CH4 in H2, had larger crystallite sizes of ∼5–8 μm, an average hardness of 31 GPa, and an average modulus of 541 GPa. A higher CH4 concentration of 0.99% in H2 resulted in the formation of finer crystallites of approximately 0.5 μm, an average hardness of 65 GPa, and an average modulus of 875 GPa. While these values lie on the low end or outside of the range reported for single crystal diamond, this study has demonstrated that CVD diamond films can be synthesized with ultrahigh or near ultrahigh hardness.

A study has been made of the correlation between wear resistance and crystalline structure of ion implanted glassy carbon. Nitrogen ions were implanted in glassy carbon with fluences ranging from 5 × 1014 to 5 × 1016 ions/cm2 at an energy of 150 keV. The target temperature during ion implantation was maintained constantly at −70, 25, and 200 °C. Wear tests were carried out with the system of glassy carbon and polishing silk disk on which water including diamond slurry was poured, using a conventional polishing machine. The surface layer structure was investigated by means of laser Raman spectroscopy. Nitrogen implantation causes the wear resistance to improve, and the reduction of wear rate is dependent on the ion fluence and the target temperature during ion implantation. As the fluence increases and the target temperature is lower than room temperature, the wear rate decreases drastically. Raman spectra show that the structure of ion implanted layers becomes what is called amorphous-like as the fluence increases and the target temperature is lowered. In conclusion, the wear resistance of glassy carbon is improved owing to the change in structure followed by nitrogen implantation at a relatively high fluence and low target temperature.

Amorphous carbon-silicon (a–C–Si) coatings with smooth surface and adhesion to steel substrate were deposited at 550°C by a dc glow discharge method from reactant gases of CH4, SiCl4, H2, and Ar at a deposition rate of 1–3 μm h−1. Diamond-like carbon was detected by laser Raman spectroscopy in the coatings with high hardness of Hv 2000 and more than 70 at. % carbon. Ball-on-disk type and Ohgoshi-type apparatuses were used to measure the tribological properties. Ball-on-disk tests revealed that the a–C–Si coatings showed a friction coefficient as low as 0.04 against steel with no lubricant in an ambient atmosphere of 70% relative humidity, which was one-third that of an i–C coating. The wear rate of the steel ball against the coated disk was an order and three orders of magnitude smaller than that against i–C coated and uncoated disks, respectively. Both types of tests showed that the wear rate of the a–C–Si coating itself was also very small.

Polycrystalline diamond films of several thicknesses have been fractured by manual bending and examined by scanning electron microscopy. These films have been deposited in controlled environments at low pressures by chemical vapor deposition and in ambient atmosphere with an oxygen-acetylene torch. Fracture surfaces in the low pressure depositions exhibit cleavage steps across the grains. These surfaces, independent of thickness, are primarily transgranular, attesting to the inherent strength of the deposits. However, the ambient deposited diamond has primarily intergranular fracture indicative of weak grain boundaries. Internal defects, observed with transmission electron microscopy, such as twins, stacking faults, and dislocations, occur generally in both types of deposition with no apparent preference for location or type of deposition.

A diamond film commercially deposited on a 10 cm diameter silicon wafer has been evaluated by a variety of analytical and mechanical procedures. The film is nominally 2.5 μm thick and is very smooth with a surface roughness of only 28.1 nm, as measured by atomic force microscopy. The grain size is very small, with grains from 10 nm to about 100 nm in diameter. A sharp diamond diffraction pattern is obtained across at least 98% of the surface area, as measured by transmission electron diffraction. Raman spectra show a strong diamond band at 1330 cm−1, as well as a strong graphite band at 1580 cm−1. Additional bands are seen near 1500 cm−1 and 1200 cm−1 and are attributed to non-diamond, non-graphite carbon and to macrocrystalline diamond, respectively. Intensity in the graphite band decreases toward the outer edge of the wafer. Elastic recoil detection shows the bulk hydrogen content of the film to range from 1 at.% near the edge of the wafer to 3 at.% near the center. The film is considerably harder than the silicon substrate and is highly adherent. During acoustic emission scratch adhesion testing, the film exhibits a critical load for failure of 11.2 N. At this load the film spalls from the substrate, at the film interface. Almost 50% of the scratch tests also show limited local failure (partial film loss) at a critical load of 2.6 N. Both failure modes may be similar to cohesive failure modes in the underlying silicon substrate which shows critical loads of 4.1 and 10.0 N. The separate failure loads may be related to processes with different friction coefficients.