In this study, ZnO f ilms heavily doped with Al or Ga were grown on a polarity-controlled buffer layer using pulsed laser deposition. The films prepared using a 1 mol% Al-doped target with the buffer layer grown at 700 °C had the c(+)-face, whereas the films with the buffer layer grown at 400 °C had the c(-)-face, which means that the polarity control can be successfully carried out using the buffer layer. However, the films prepared using targets doped with more than 1 mol% Al or Ga had the c(+)-face regardless of the polarity of the buffer layer. The 1 mol% Al-doped ZnO film with the c(+)-face had lower electron concentration and higher growth rate than the film with the c(-)-face. This result indicates that the Al content in the film with the c(-)-face was larger than that in the film with the c(+)-face.

Highly transparent and conducting Fluorine doped zinc oxide thin films were deposited using spray pyrolysis method on glass substrates held at 450 °C. The X-ray diffraction study revealed that as the dopant concentration increases in ZnO films, the intensity of the preferential orientation of (002) reflection decreased and (101) was found to increase up to 5 at. % F. The crystallite size was varied from 40 to 50 nm with dopant concentration. The optical band gap of the un-doped films was 3.30 eV and it increased to 3.34 eV for 3 at. % F. The refractive index of the films was increased from 2.05 to 2.18 with the increase of dopant concentration from 0 to 5 at. %. The scanning electron microscopy results depicted that the microstructure of ZnO: F films highly influenced by the fluorine doping. After annealing the films in hydrogen atmosphere, the resistivity of the films decreased as increase the dopant concentration and it is 4×10−3 Ω cm for 3at. % F beyond which it increased. The mobility of the charge carriers was 14 cm2/ V sec and the carrier concentration was 7.8×1019 cm3 obtained for the films doped with 3 at. % of fluorine concentration in the starting solution.

Corundum structured α-(GaFe)2O3 alloy thin films were obtained on c-plane sapphire substrates by the mist chemical vapor deposition method. Wide range of X-ray diffraction 2θ/θ scanning measurements indicated that these crystals were epitaxially grown on c-plane sapphire substrates and these are no other crystal oriented phase. The cross-sectional and plane-view transmission electron microscope images showed the growth along the c-axis of α-(GaFe)2O3 thin films on sapphire substrates, forming joint of columnar structure. The non-doped α-(GaFe)2O3 thin films showed ferromagnetic properties at 300 K, though the origin of ferromagnetism still remained unresolved. In order to enhance the spin-carrier interaction, Sn doped α-(GaFe)2O3 alloy thin films were fabricated on c-plane sapphire substrates. X-ray diffraction 2θ/θ and ω scanning measurement results indicated that the highly-crystalline films were epitaxially grown on substrates in spite of the Sn-doping.

Synthesis of both p-type and n-type oxide semiconductors is required to develop oxide-based electronic devices. Tin monoxide (SnO) recently has received increasing attention as an alternative p-type oxide semiconductor because it is a simple binary compound consisting of abundant elements. Another phase of the tin oxygen system, SnO2, is of great technological interest as transparent electrodes and as heat-reflecting filters. The preparation of tin oxide thin films has been performed by many different procedures. Radio-frequency (RF) ion-thrusters, as designed for propulsion applications, are also qualified for thin film deposition and surface etching, because different gas mixtures, extraction voltages and RF power can be applied. Tin oxide thin films were grown by ion beam sputtering (IBS) using a 3” metallic tin target. Different aspects of the thin film growth and properties of the tin oxide phases were investigated in relation to flux of oxygen fed into the gas discharge in the ion thruster. Results on thin film growth by IBS will be presented, structural, vibrational and optical properties of the films will be discussed.

The growth of thin and ultra-thin titanium dioxide layers was investigated. Oxide films were grown by galvanostatic and potentiodynamic anodisation of evaporated titanium layers on conductive substrates. It is shown that thin-film oxidation differs significantly from anodic oxidation of solid foils or plates, due to the sudden stop of anodisation process before complete oxidation of the thick films. Depending on the pH value and the potential sweep rate, the effective defect density and the dielectric constant of the anodized layers vary from 3·1019 cm-3 to 1020 cm-3and from 16 to 27, respectively, whereas the electrolyte temperature plays only a minor role.

We deposited copper oxides by rf magnetron sputtering from a 4N Cu-target at room temperature, varying the oxygen flux and keeping the argon flow constant. Dependent on the oxygen flux Cu2O, Cu4O3or CuO were synthesized. The different compounds were characterized by XRD. The dielectric functions of the oxides were determined by spectroscopic ellipsometry and show significant differences between the compounds. The electrical properties, like the carrier concentration, of each compound can be tuned by adjusting the oxygen flux. We discuss the structural, optical and electrical properties of the copper oxides in terms of phase purity and stoichiometry deviations.

We investigate metallic thin films on VO2 and show that the magnitude of the reflected color change in that visible portion of the spectrum as VO2 undergoes the insulating to metallic phase transition can be controlled by changing the type of metal, the thickness of the metal and by patterning the metal at the nano scale. We consider the role of surface plasmas in the metal film and show that in the near infrared, the magnitude of the reflectivity increase for metal coated VO2 films, but decrease for uncoated VO2 thin films. This is explained in the context of Fresnel equations and considering the large change in the imaginary part of the dielectric constant as the VO2 changes state from the insulating to metallic phase.

The atomic layer deposition (ALD) of SrO was conducted on various oxide surfaces by using strontium bis(tri-isopropylcyclopentadienyl) and water at deposition temperatures of 200 and 250°C. The initial and steady growth behaviors were studied by in-situ spectroscopic ellipsometry and ex-situ X-ray photoelectron spectroscopy. For initial growth, the growth per cycle (GPC) of SrO not only depends on the concentration of hydroxyl groups but also the formation of interfacial Sr-O-Si bonds. For the steady growth, in-situ annealing was used to enhance the growth rate and multiple growth regions were identified.

Single phase, a FeVO4 triclinic crystalline structure was successfully synthesized by annealing the mechanochemically milled xV2O5·(1-x)α-Fe2O3 composites (x = 0.5) at 550 °C for 1 h. X-ray powder diffraction (XRD) and Mössbauer spectroscopy were combined for a detailed study of the assisting role of the mechanochemical milling process. Mechanochemical milling homogeneously mixed the starting materials of α-Fe2O3 and V2O5 and substantially decreased their average grain sizes. The partially V5+-substituted α-Fe2O3 phase and Fe3+-substituted V2O5 could be the important intermediate phases in the production of FeVO4 single phase. In addition, xV2O3·(1-x)α-Fe2O3 (x = 0.1, 0.3, 0.5, and 0.7) solid solutions were successfully synthesized by mechanochemical activation of V2O3 and α-Fe2O3 mixtures. Complete solid solutions exist after 12 h ball-milling time for all studied x values. The synthesized xV2O3·(1-x)α-Fe2O3 solid solutions with x = 0.5 and 0.7 were mainly paramagnetic at room temperature. The study demonstrates that the transformation pathway is related to the valence state of the metallic specie of the oxide used in connection with hematite.

In this study we apply reaction thermodynamics to show that a significant volatile hydroxide vapor partial pressure forms at a metal-oxide interface and is a likely precursor source for nanowire growth. The growth of WO3 and CuO nanowires are used as examples for reactions dependent on only H2O and O2+H2O, respectively. Optimal temperatures, H2O (and O2) partial pressures for volatile hydroxide formation are calculated and experimentally investigated. We conclude that metal oxide nanowires can be readily grown at relatively low temperatures (close to or less than 500oC) over short anneal times (tens of minutes). The growth of these metal oxide nanowires, with many oxidation states, by this simple thermal technique is readily suited for a range of emergent large surface area nanostructured optical and electrical applications, including sensing, photocatalysis and ultracapacitors.

A Mg(OH)2–C transparent conductive film was prepared using the sputtering method by the initial formation of a Mg-C film generated by the alternate layering of Mg and C on a rotating substrate and subsequent exposure of the film to atmospheric water vapor. To examine the influence exerted by the Mg/C layers of the starting film sample on semiconductivity,evaluations of the electrical conductivity properties of the film during the hydroxylation process and the optical properties after the hydroxylation process were carried out. As a result, although no effects on the characteristics of the electrical conductivity properties associated with the composition or number of layers in the films could be confirmed, it was determined that the films possessed the characteristics of semiconductors. On the other hand, the optical properties were found to be affected by the composition and number of layers of the Mg/C films.

We have successfully formed high-quality nanoporous NiO films by the hydrothermal technique and observed intense ultraviolet (UV) luminescence at room temperature. The SEM image reveals nanoporous NiO films with pore diameters from 70 to 500 nm. The results of XRD, Micro Raman and FTIR characterizations confirm the cubic structure of NiO. The optical band gaps estimated from the absorption spectrum are found to be 3.86 and 4.51 eV. The former is similar to that of bulk NiO, while the latter is much higher than that of bulk NiO. The increased band gap was attributed to the quantum confinement in the NiO nanocrystals, which may be present in the nanoporous NiO film. The room-temperature photoluminescence (PL) spectrum shows a peak of intense luminescence at 3.70 eV and several other peaks in the UV and near-UVwavelength regions. The intense UV luminescence at 3.70 eV was associated with the near band-edge emission and the others with defect-related emission. The high-quality wall of nanoporous NiO with a large surface-to-volume ratio provided the intense UV emission.

Proposed is the use of Hydrogen Peroxide (H2O2) as the ideal oxidant for atomic layer deposition of metal oxide films. H2O2 has similar oxidation properties to Ozone while simultaneously having slightly stronger proton transfer properties than water. Vital to the success of any vapor phase chemistry is delivery of stable compositions, temperature and pressure. This study demonstrates the viability of a new membrane technology for the precise delivery of H2O2/ H2O mixtures starting from a liquid range of 30-70%. An in-situ gas phase cleaning process to remove carbon contamination from Ge(100) surfaces using gas phase H2O2 has been characterized.

We studied the electrical properties of thermally treated V2O5-CuO-Fe2O3-P2O5 (vanadate) glasses under reducing high-vacuum conditions. The glasses were prepared by using a melt-quenching method and then applied on Al2O3 substrates as ∼40μm-thick films. The glass films were then heat treated at 375−550°C under a vacuum of 10−6 Pa. Powder X-ray diffraction showed the formation of complex oxides of both MxV2O5 (M = Cu, Fe; x = 0.12−1.3) and vanadium oxides (VOx; x = 1.5−2.5). The resistivity of the glass film crystallized at 550°C measured at 50°C and 300°C were 1.8 × 100 Ωcm and 2.8 × 10−1 Ωcm, respectively, which was 10 times lower than that of the film crystallized in air. The Seebeck coefficient was −132 μV/K at 50°C and −130 μV/K at 300°C. These results show that the vanadate glasses crystallized under the appropriate condition become potential candidate materials for semiconductor and thermoelectric application.

We successfully fabricated corundum-structured α-(InFe)2O3 alloy films on sapphire substrates by inserting α-Fe2O3 buffer layers. The ion compositions in the α-(In1-xFex)2O3 films, x, were artificially tuned for the entire range from 0 to 1 by changing the ion precursor composition in source solution. Magnetic measurements revealed that the α-(In1-xFex)2O3 (x = 0.13) alloy film showed ferromagnetism at 5 K.

(Na,K)NbO3 is a promising candidate for lead-free piezoelectric materials. (Na1-xKx)NbO3 films (x = 0.3–0.7) were epitaxially grown on a (100)SrTiO3 substrate via pulsed laser deposition. The effects of substrate temperature and oxygen pressure during deposition on the crystallinity of the films were examined: both parameters affected the mosaic spread of the crystallites and the formation of an impurity phase. In this study, the optimum conditions for the preparation of highly crystalline films were a substrate temperature of 800 °C and oxygen pressure of ∼60 Pa. The lattice constants parallel and perpendicular to the substrate surface responded differently to changes in x: the constant parallel to the surface increased with increasing x, while the constant perpendicular to the surface was maximized at x = 0.5. The difference in the dependence of the lattice constants could be explained by the elastic distortion of the lattice.

The effect of tungsten oxide (WO3) thin film thickness on the surface plasmon resonance (SPR) properties have been investigated. WO3 films of varying the thickness (36 nm, 60 nm, 80 nm, 100 nm, 150 nm and 200nm) have been deposited onto Au coated prism (Au/prism) by radio frequency (RF) magnetron sputtering technique. The SPR responses of bilayer films were fitted with the Fresnel’s equations in order to calculate the dielectric constant of WO3 thin film. The variation of complex dielectric constant and refractive index with the thickness of WO3 thin film was studied.

The phase transition of VO2 grown on sapphire having different crystallographic growth planes is examined experimentally. Measurements of electrical resistivity are compared with spectroscopic ellipsometry studies, to obtain complex index of refraction and plasma frequency, and transmission in the terahertz frequency range, each as a function of temperature.

Thin films of Transition Metal Oxides (TMOs) were deposited by reactive sputtering of pure transition metal targets in Argon-Oxygen gas mixture at elevated substrate temperature for efficient energy consumption. The atomic composition and thickness of the TMO films was determined by Rutherford Backscattering Spectroscopy (RBS). Optical transmittance and reflectance spectrum of the films on quartz substrate was measured with thin film measuring system at room temperature and slightly elevated temperature. The surface morphology and structure of the TMO films was determined with Atomic Force Microscope (AFM).

Ba0.6Sr0.4TiO3 (BST) thin films were deposited on La0.5Sr0.5CoO3 (LSCO) buffered Ti substrates. Both BST and LSCO were prepared by sol-gel method. X-ray diffraction (XRD) and scanning electron microscopy (SEM) analysis were used to investigate the effect of LSCO sol concentration on the crystallinity and surface morphology of the films. The results show that with the increase of LSCO sol concentration, BST films show variation of the structure and dielectric properties. BST films for LSCO of 0.2 mol/L exhibit a better crystallinity and improved dielectric properties, with the tunability, dielectric constant and tanδ of 30%, 420 and 0.028 respectively.