We synthesized ZnS nanocrystals from identical raw material solution by the thermal decomposition of an amine complex. The shapes of products were changed by simply varying heating rate. At higher heating rate, we obtained the isotropic zincblende nanocrystals. At the lower heating rate, the nanorods were formed and the length was increased with the decrease of heating rate. The nanorods had wurtzite structure below 175 °C, and consequently transformed to zincblende phase during a temperature rise to 200 °C. These particle shapes and phases were related to the adsorption properties of amine ligands. Additionally, the synthesized ZnS nanodots and nanorods exhibited predominantly band-edge emission in fluorescence spectra.

This work highlights the solder joints reliability issues emerged during the development of a novel compliant contacting technology. The peculiar process in this technology is a mechanical lifting procedure in which a pulling force is exerted onto 63Sn-37Pb (eutectic) solder joints (realized by a flux-less thermo compression process), releasing metal traces from the substrate, to form free standing vertical structures. Since joints mechanical characteristics are critical for the successful fabrication of contacts, different bonding conditions (inert or forming atmosphere, temperature rates) and surface finishing (electroplated gold and preformed solder) have been tested. SEM and EDX analyses have been performed on failing joints to investigate failure causes and classify defect typologies. A constantly higher failure rate (percent number of failing joints) has been observed on gold finished surfaces. Analyses proved that such unusual rate was due to contamination of gold surface left by additives in the plating bath and to the embrittlement caused by gold diffusion into molten solder. Plating additives contamination reduces the wettability of gold surfaces. Concentration values of 3 wt.% for gold, considered safe for surface mount applications, caused embrittlement in solder bumps of 20-40 μm diameters.

Leveraging past research activities in orientation control of lead zirconate titanate (PZT) thin films [1,2], this work attempts to optimize those research results using the fabrication equipment at the U.S. Army Research Laboratory so as to achieve a high degree of {001}- texture and improved piezoelectric properties. Initial experiments examined the influence of Ti/Pt and TiO2/Pt thins films used as the base-electrode for chemical solution deposition PZT thin film growth. In all cases, the starting silicon substrates used a 500 nm thermally grown silicon dioxide. The Pt films were sputter deposited onto highly textured titanium dioxide films grown by a thermal oxidation process of a sputtered Ti film [3]. The second objective targeted was to achieve highly {001}-textured PZT using a seed layer of PbTiO3 (PT). A comparative study was performed between Ti/Pt and TiO2/Pt bottom electrodes. The results indicate that the use of a highly oriented TiO2 led to highly {111}-textured Pt, which in turn improved both the PT and PZT orientations. Both PZT (52/48) and (45/55) thin films with and without PT seed layers were deposited and examined via x-ray diffraction methods (XRD) as a function of annealing temperature. As expected, the PT seed layer provides significant improvement in the PZT {001}-texture while suppressing the {111}-texture of the PZT. Improvements in the Lotgering factor (f) were observed upon comparison of the original Ti/Pt/PZT process (f=0.66) with samples using the PT seed layer as a template, Ti/Pt/PT/PZT (f=0.87), and with films deposited onto the improved Pt electrodes, TiO2/Pt/PT/PZT (f=0.96).

This work addresses the paucity of roughness measurements by reporting on roughness parameters in uniaxial strained Si beams relevant for state of the art MOSFETs, nanowire and MEMS devices, with varying degrees of strain. Roughness is characterized by high resolution AFM and strain is characterized by Raman spectroscopy. Microstructures comprising a silicon nitride actuator are used to induce a wide range of stress levels in Si beams. The microstructures also allow the comparison of surface evolution in the strain direction (along the Si beam) compared with the unstrained direction (across the Si beam). A gradual reduction in rms roughness amplitude and increase in roughness correlation length in the direction of the applied stress are found for increasing values of strain. In contrast, surface roughness in the direction perpendicular to the applied stress remained largely unchanged from the unstrained initial state.

Infrared radiation (IR) detection and imaging are of great importance to a variety of military and civilian applications. Microcantilever-based IR detectors have recently gained a lot of interest because of their potential to achieve extremely low noise equivalent temperature difference (NETD) while maintaining low cost to make them affordable to more applications. However, the curvature induced by residual strain mismatch within the microcantilever severely decreases the device performance. To meet performance and reliability requirement, it is important to fully understand the deformation of IR detectors. Therefore, the purpose of this study is threefold: (1) to develop an engineering approach to flatten IR detectors, (2) to model and predict the elastic deformation of IR detectors using finite element analysis (FEA), and (3) to study the inelastic deformation during isothermal holding.

On-chip MEMS (Micro Electromechanical Systems) characterization devices have been used to extract the Young’s modulus and average stress of polysilicon doped with phosphorus using thermal diffusion from a spin-on-dopant source. A customized fabrication process was developed and the devices were fabricated and tested. Resonant and static deformation tests were performed using microbridges. Information gathered from these experiments was combined to extract the Young’s modulus and residual stress of the thin film. Several doping concentrations, from undoped to 2.99×1020 phosphorus atoms/cm3 (4.148×10-4 Ω/cm), have been studied and it has been concluded that the Young’s modulus of phosphorus doped polysilicon with a chemical phosphorus concentration of 1.96×1020 atoms/cm3 (4.572×10-4 Ω/cm) increases by approximately 50GPa and the average stress of polysilicon with a phosphorus concentration of 2.99×1020 atoms/cm3 (4.148×10-4 Ω/cm) becomes more tensile by approximately 63 MPa relative to undoped specimens.

Ferroelectric electro-optics materials are widely studied for optical applications, such as optical switches, optical scanners, and optical shutters. However, conventional operation of those devices requires a continuous external electrical field. On the other hand, our group proposes an optical property memory effect by controlling domain structure as either full-polarized or depolarized state using asymmetric voltage operation. The optical property memory effect can keep its optical value, such as refractive index and light transmittance without any external electrical field. In this study, it was confirmed that the refractive index state had two stable values depending on domain conditions. This memory effect should be useful for innovative optical switch or scanner in the future.

An Investigation of the piezoresistive response of a metal-polymer composite based on nickel conductive filler in a polydimethylsiloxane (PDMS) insulating matrix for tactile sensor application is presented in this paper. Lacking a mechanical deformation, the prepared composites show no electric conductivity, even though the metal particle content is well above the expected percolation threshold. In contrast, when subjected to uniaxial compression, the electric resistance is strongly reduced. A variation of up to nine orders of magnitude was registered. The thickness of the insulating layer between particles decreases when the sample composite is compressed. Therefore, the electric conduction which is related to a tunneling phenomena, increases exponentially. This behavior is further enhanced by the presence of very sharp nanometric spikes on the particles surface which act as field enhancement factors. In the presented work, the piezoresistive behavior of the composite, the stability in time of the resistance value and the response to several cycles of compression and decompression are evaluated on samples with different physical parameters like nickel content, PDMS copolymer/curing agent ratio and thickness.

High-temperature measurements of the spatial distribution of the displacement characteristics of a thickness shear mode langasite (La3Ga5SiO14) resonator are obtained using a laser Doppler interferometer. Thereby, the resonator is excited in the fundamental mode and the third overtone. Further, the resonator is coated with a gas sensitive CeO2-x film which exceeds the metal electrode. In reducing atmospheres the conductivity of the film increases and induces an increase of the effective electrode area. This effect leads to a broadening of the mechanical displacement distribution. The latter depends strongly on the size of the excited part of the resonator which is determined by the effective size of the electrodes. The direct determination of the mechanical displacement at different oxygen partial pressures confirms a model as derived from the electrical impedance of resonator devices [1]. Further, information about the mass sensitivity distribution of resonators is obtained since the property is directly proportional to the amplitude.

In this work, the mechanical properties of PECVD silicon nitride deposited on silicon substrates by two different processing conditions were investigated. Indentation method was primary used for qualitatively examining the effect of process conditions to the achieved mechanical properties. The experimental results indicated that the residual stress, fracture toughness and interfacial strength, as well as the fatigue crack propagation were strongly depended on the processing conditions such as deposition temperatures and chamber pressures. Preliminary results indicated that the specimen deposited at a lower temperature and a lower pressure exhibited a much less residual tensile stress and a better interface strength. On the other hand, it was found that RTA could enhance the interfacial strength but the generated high tensile strength could actually reduce the equivalent toughness and leads to structural reliability concerns. In summary, the characterization results should be possible to provide useful information for correlating the mechanical reliability with the processing parameters for future structural design optimization and for improving the structural integrity of PECVD silicon nitride films for MEMS and IC fabrication.

Because of their high mechanical compliance and electrical properties, the idea of using Ga and CNTs for micro electrical relay contacts has been investigated to minimize damage from switching and make good electrical contacts. Ga was electroplated into droplets on the order of 50 µm in radius on single crystal Si to create a contact for a switch that can be annealed to recover its original electrical properties after mechanical damage. CNTs were grown on Si substrates, coated with a thin Au layer, and transferred to other Si or Kapton substrates through thermocompression bonding. In the case of the Ga contact, repeated switching led to an increase in the resistance, but the resistance recovered after a thermal reflow process at 120 °C. Longer term and larger area contacts were used to measure the contact behavior under switching conditions of up to 200 A/cm2. At moderate cycling conditions (on the order of 200 cycles) the adhesion began to significantly degrade the switch. The oxidation behavior of the Ga droplets was characterized for thermal reflow, suggesting a passivating 30 nm oxide forms at 100 °C. The oxide formed by the Ga is thin and fragile as demonstrated by its use in a switch. The Ga droplets were examined with electrical contact resistance nanoindentation and the loads at fracture and the onset of electrical contact were identified. CNT turfs were also tested for making patterned electrical contacts; turfs of lateral dimensions similar to the Ga droplets were tested using electrical resistance testing during nanoindentation and as macroscopic contacts, and shown to be able to carry similar current densities. The results will be compared between the two systems, and benefits and challenges of each will be highlighted for creating compliant electrical switches and contacts.

A mechanical vibration system was made by sandwiching an array of parylene-C microsprings between two flat plates of Si. This system was driven mechanically in forced oscillation using a piezo transducer attached to the bottom Si plate. An atomic force microscope was used to record the displacement of the top plate in both the contact and non-contact modes. At the resonance, the system was observed to give large vertical displacement amplitude of up to 100 nm with a Q-factor of up to 900.

In recent years, microfluidic devices have emerged as a platform in which to culture tissue for various applications such as drug discovery, toxicity testing, and fundamental investigations of cell-cell interactions. We examine the transport phenomena associated with gradients of soluble factors and oxygen in a microfluidic device for co-culture. This work focuses on emulating conditions known to be important in sustaining a viable culture of cells. Critical parameters include the flow and the resulting shear stresses, the transport of various soluble factors throughout the flow media, and the mechanical arrangement of the cells in the device. Using analytical models derived from first principles, we investigate interactions between flow conditions and transport in a microfluidic device. A particular device of interest is a bilayer configuration in which critical solutes such as oxygen are delivered through the media into one channel, transported across a nanoporous membrane, and consumed by cells cultured in another. The ability to control the flow conditions in this membrane bilayer device to achieve sufficient oxygenation without shear damage is shown to be superior to the case present in a single channel system. Using the results of these analyses, a set of criteria that characterize the geometric and transport properties of a robust microfluidic device are provided.