Thin films of platinum deposited by physical vapor deposition (PVD) processes such as evaporation and sputtering are used in many academic and industrial settings, for example to provide metallization when tolerance to corrosive thermal cycling is desired, or in electrocatalysis research. In this review, various practical considerations for platinum (Pt) metallization on both Si and SiO2 are placed in context with a comprehensive data review of diffusion measurements. The relevance of diffusion phenomena to the development of microstructure during deposition as well as the effect of microstructure on the properties of deposited films are discussed with respect to the Pt–Si system. Since Pt and Si readily form silicides, diffusion barriers are essential components of Pt metallization on Si, and various failure modes for diffusion barriers between Pt and Si are clarified with images obtained by electron microscopy. Adhesion layers for Pt films deposited on SiO2 are also considered.

Military operations occurring in particle-laden environments have resulted in aircraft incidents and loss of life due to sand ingestion into the engine. Sand melts in the hot combustion environment and deposits as glassy calcia–magnesia–alumino–silicates (CMAS) which leads to rapid performance degradation due to clogged air pathways in the engine. A novel, composite thermal barrier coating (TBC) consisting of yttria-stabilized zirconia (YSZ) blended with gadolinia is proposed that combines the excellent thermo-mechanical properties of YSZ together with the CMAS resistance of rare-earth oxides. YSZ was blended with 2, 8, 17, and 32 vol% gadolinia and tested under simulated engine-relevant conditions. The presence of gadolinia in the composite coating reduced the adhesion of the CMAS, and at 32 vol% gadolinia addition, the CMAS was completely delaminated. A possible CMAS adhesion mitigating mechanism is discussed. This work demonstrated the capability of a new composite TBC to significantly reduce CMAS adhesion.

To estimate the cesium sorption by the bentonite and to obtain the isotherms, some batch-adsorption experiments are being carried out, being the Kd (retardation coefficient) calculated from these isotherms. One-dimensional flow cell was constructed to measure the bentonite permeability regarding to a cesium solution, which results will be used to evaluate the diffusion coefficient – D. It will be used the PHREEQC software to model the transport of the cesium radionuclide through this bentonite with the Kd and D data. The modelling of radionuclide transport in the Brazilian materials will contribute to evaluate the efficiency of multi-barriers system of the national repository, because it is one of its safety criteria.

The paper provides generic overview of legal and regulatory framework of radioactive waste management activities held in Russian Federation and national operator responsibilities and accomplishments. It gives a short description of waste classification scheme used and plans for radioactive waste disposal. In particular the paper provides information on the plans of the FEDERAL STATE UNITARY ENTERPRISE "National operator for radioactive waste management" to construct and operate several near-surface disposal facilities for low and intermediate level waste with total capacity up to 550 000 cubic meter. The paper also provides detailed information on the steps of high-level waste disposal program including site-selection, construction phase of the underground research laboratory (URL) near the city of Zheleznogorsk, Krasnoyarsk Region and research program after the construction of the URL. The paper also describes Russian system and state policy in the field of RW management and gives recommendations for future implementers.

Organic light-emitting diodes (OLEDs) have aroused great attention due to the advantages of high luminescent efficiency, fast response time, wide viewing angle, and the compatibility with the flexible electronics. Nevertheless, the organic luminescent materials are vulnerable to environment moisture/oxygen. Thus, how to protect the OLEDs from the ambient moisture/oxygen erosion is of great importance to ensure the stability and reliability. Thin film encapsulation (TFE) via atomic layer deposition (ALD) has emerged as a potential method to meet the encapsulation requirements of OLEDs due to its unique assets. In this review, the challenges of TFE, including pinholes, crystallization, cracks, and overheated, are introduced first. The ALD-based monolayer, composite structures, and hybrid laminates were developed to improve the barrier property, flexibility, and thermal conductivity. Besides, the ALD reactors and processes for TFE are also reviewed. Finally, the challenges remained and future development in the stabilization of OLEDs via ALD are also discussed.

Diffusion barrier materials play an important role in both structure reliability and performance stability of thermoelectric (TE) modules. Preferred barrier materials are screened out from various candidates by comparing the interdiffusion at the barrier material/TE substrate interfaces. Traditionally, for each barrier material candidate, complicated fabrication processing of TE elements (electrode/barrier material/TE material) must be finished to obtain relative interfaces, which makes the screening costly and time consuming. In this article, using a high-throughput strategy, we developed a high-efficiency screening method of barrier materials. By cosintering the mixture of TE substrate material and various barrier material candidates simply following the TE material’s sintering parameters, various microinterfaces were integrated to one single sample. This enables parallel aging and microstructure characterization of different interfaces, and preferred barrier materials can be swiftly screened out. As a result, it makes the design and optimization of TE modules much more efficient and economical.

Graphene oxide (GO) is a promising material in improving the corrosion resistance properties of metals. This improvement significantly relies on the microstructure and electrical properties of GO, which nevertheless is rarely studied. Here, multiscale GOs with different flake sizes and oxidation degrees were fabricated and incorporated into waterborne alkyd resin (AR). The physical and chemical structures of GO and AR/GO composites were characterized in detail. Multiscale GOs are successfully prepared, and the corrosion resistance of AR/GO coatings is measured by electrochemical workstation. Electrochemical experiments indicate that GOs with larger flake sizes have excellent barrier properties due to the shielding effect; GOs with appropriate oxidation degrees could effectively improve the dispersion of GO and avoid the conductive path of GO in the matrix, because oxidation degree of GO could influence the dispersion and electrical properties. The corrosion protection efficiency of AR/GO(GO: 120 μm, 1.5 wt%, sp2/sp3 = 2.61) is 98.14%, which is 2.26 times higher than AR. The multiscale effects of GO on the corrosion resistance property of AR coatings are quite general, thus providing guidelines for developing highly efficient corrosion resistant coatings for practical usage.

Soil samples were obtained from three different locations; Ijapo, Ibule and FUTA North Gate in Akure, Ondo State, Nigeria. The materials were dried, crushed and calcined by heating the samples in a muffle furnace to 850 °C, holding for three hours and and then brought out of the furnace to cool in the laboratory so that the organic and volatile matter escaped, and the oxide content increased. The calcined materials were milled with a ball mill and then sieved with 75 µm mesh size British standard sieves. The samples that passed through the sieves were collected for analysis to determine their extender characteristics through x-ray flouresence (XRF) spectroscopy, x-ray diffraction (XRD) analysis, scanning electron microscopy (SEM), specific gravity, oil absorption, pH and refractive index measurements as well as the determination of their resistance to chemicals. XRF results showed that materials are kaolinite in nature. XRD results showed the phase compositions of each sample as materials suitable for applications as extenders in the paints industry. SEM micrographs showed the homogeneity of the samples from Ijapo and FUTA North Gate while the sample from Ibule showed segregation of the phase compositions. The specific gravity, pH, oil absorption and refractive index of each material were within the range of those of commercial extenders used in the paints industry. The calcined materials were found to be resistant to various chemical media. The characterized materials will be suitable as extenders and pigments in the paints industry.

Formation of a low barrier back contact plays a critical role in improving the photoconversion efficiency of the CdTe solar cells. Incorporating a buffer layer to minimize the band bending at the back of the CdTe device can significantly lower the barrier for the hole current, improving open circuit voltage (VOC) and the fill factor. Over the past years, researchers have incorporated the both ZnTe and Te as buffer layers to improve CdTe device performance. Here we compare device performance using these two materials as buffer layers at the back of CdTe devices. We show that using Te in contact to CdTe results in higher performance than using ZnTe in contact to the CdTe. Low temperature current density-voltage measurements show that Te results is a lower barrier with CdTe than ZnTe, indicating that Te has better band alignment, resulting in less downward bending in the CdTe at the back interface, than ZnTe does.

In this paper, we will discuss stability and reliability requirements of organic electronic devices and evaluate different encapsulation approaches enabling stable organic ultra-thin and stretchable devices. We highlight the differences in requirements and encapsulation approaches for applications, including organic light emitting diode (OLED) displays, OLED lighting, photovoltaics, and sensors. Stability and reliability requirements addressed in this paper cover light management, mechanical characteristics, chemical compatibility, form factors, and durability. While flexible organic electronic devices have already been demonstrated and commercialized, so far only prototypes of ultra-thin and stretchable devices have been demonstrated. The technological progress is promising and by identifying the gaps between prototyping and product realization, we intend to stimulate further research and development in this area.

In this study, TiO2 photoanodes doped with samarium ions via a method of hydrothermal treatment were used to fabricate dye-sensitized solar cells (DSSCs). Different doping concentrations were investigated on the effects of the cell’s performance. Some techniques including XRD, scanning electron microscopy, HRTEM, XPS, UV-Vis, photoluminescence were used to characterize the morphology, structure, and optic properties of the prepared photoanodes. The photovoltaic performance of the fabricated cells was further evaluated by measuring the current density–voltage (J–V) curves. It was found that: (1) The down-conversion luminescence effect derived from samarium doping could enhance the light-harvesting ability. (2) Compared with the undoped sample, the samarium-doped cells exhibited enhanced photovoltaic performance. Among the cells with different doping concentrations, the cell TiO2:0.015 Sm showed the best power conversion efficiency of 6.08% with a high open-circuit voltage (V oc) and a short-circuit current density (J sc).

We proposed an MgO barrier which is fabricated by combination of rf-sputter deposition of MgO film and subsequent in-situ post oxidation (PO). We found that the perpendicular magnetic anisotropy (PMA) of the CoFeB layer formed on this MgO barrier with PO was improved. We also found that a short error rate reduced drastically and a magnetoresistance (MR) ratio increased about 20% for the magnetic tunnel junction (MTJ) with this MgO barrier with PO. In addition, we showed that this MgO barrier with PO has long endurance life compared with conventional sputtered MgO barriers, and has a potential to operate over 1016 write cycles.

Furthermore, we have observed that the PO could suppress the Fe diffusion into the MgO barrier and form Fe-O bonding at MgO/CoFeB interface using electron energy-loss spectroscopy (EELS). The obtained results might be involved to the improvement of PMA and MTJ characteristics.

The growth mechanism and the barrier performance of Al2O3, SiO2 and a binary Si-Al oxide (SiAlxOy) deposited by spatial atomic layer deposition (SALD) were investigated. Alumina and silica were deposited by TMA and BDEAS with growth-per-cycles (GPC) of 0.16 and 0.013 nm, respectively. Interestingly a significant higher GPC of 0.225 nm was found for SiAlxOy. Although alumina in principle has excellent barrier properties, the films easily degraded and lose their barrier performance if exposed to water vapor at elevated temperatures. Therefore, the barrier performances of these films were investigated under harsh environment conditions. We found that the barrier performance of 100 nm Al2O3 failed in less than one day at 70 °C with 70 % relative humidity, whereas 100 nm SiAlxOy sustained for approximately one week. However, the resistivity of those barrier systems was significantly improved by inserting a single 3.3 nm SiO2 layer into the barrier films. In this way the barrier system withstands up to 5 months and the intrinsic water vapor transition rate was reduced by two to three orders of magnitude to ∼10-4 g/m2/day at these tough aging conditions.

Photolithographically patterned thin films often possess unwanted spikes along the side edges. These spikes are a significant issue for the development of spinvalve memory, tunnel junction based molecular devices, and micro-electromechanical systems. Here, we report a very simple, economical, and fast way of creating an optimum photoresist profile for the production of spike-free patterned films. This approach is based on performing a soaking step in the positive-photoresist’s developer solution before the UV exposure. However, the success of this method depends on multiple photolithography factors: photoresist thickness (governed by spin speed), soft baking temperature, soaking time in developer, and exposure time. In this paper, we report our systematic experiments to study the effect of these factors by following the L9 experimental scheme of the Taguchi Design of experiment (TDOE) approach. The L9 experiment scheme effectively accommodated the study of four photolithography factors, each with three levels. After performing photolithography as per L9 TDOE scheme, we sputter deposited 20 nm Tantalum to check the side edge profile of the patterned film by atomic force microscope (AFM). We measured the heights of the spikes along the thin film edges. We utilized spike height as the desired property and chose “smaller the better” criteria for the TDOE analysis. TDOE enabled us to understand the relative importance of the parameters, relationship among the parameters, and impact of the various levels of the parameters on the thin film edge profile. TDOE analysis yielded an optimum combination of levels for the four photolithography factors. The optimum combination of photolithography factors included spin speed 4000 rpm, 100 °C soft baking temperature, 60 sec pre-soaking in the developer solution, and 15 sec UV exposure. We validated the TDOE by AFM and observed spike free patterned films. We also made complete tunnel junction devices by utilizing the optimized photolithography factors for the bottom electrode and obtained excellent tunneling behavior. In summary, this study provides a very simple, economical, and fast photolithography approach for creating optimum photoresist profile for the micro-nano scale devices and electromechanical structures.

The use of modern graphenic materials for improving oxygen barriers in food packaging and anti-corrosion barriers in coatings is explored by compounding and casting graphene nanoplatelets (GNP) with polyethylene (PE) and epoxy (EP). The GNP / PE films show comparable oxygen transmission rates to the neat PE films, indicating that further processing will be necessary to realize the desired enhancements. Early corrosion tests indicate that the GNP / EP coatings are providing more protection than the neat EP coatings on steel. Experiments to expand on these results are underway.

Graphite nanoplates (GnP) have recently attracted attention as an economically viable alternative for the development of functional and structural nanocomposites. The incorporation of GnP into waterborne polyurethane (WPU) with loadings from 0.1 to 10 wt.% was studied. The mechanical properties of the composite films were assessed by tensile testing showing an increase of the Young’s modulus up to 48%. The electrical conductivity increased by 9 orders of magnitude and the water vapor permeability of the composite films decreased 57% for composites containing 5.0 wt.% of GnP.

Carbon nanotubes (CNTs), with exceptional thermal and mechanical properties as well as inherently high surface area, are an attractive candidate for integrating into thermal structures of advanced power electronics. Growth of vertically aligned carbon nanotubes (VACNTs) directly onto copper (Cu) substrates is a promising approach to apply CNTs as novel thermal interface materials (TIMs) in electronics packaging. However, compared to growing CNTs on conventional inert substrates such as SiO2, direct growth of controllable CNT arrays onto Cu substrates is significantly more challenging due to the diffusion of metallic catalyst into the substrate during growth. By depositing an appropriate buffer layer on the Cu substrate surface, VACNTs of good alignment and high quality were reproducibly synthesized on the Cu substrate via the chemical vapor deposition (CVD) method in this study. The effect of different buffer layers on the CNT growth, nanotube structure and quality was investigated (SEM, Raman), particularly in terms of the interfacial properties between the CNT array and Cu substrate (Tensile compression force tester, Laser Flash Analysis). Our experimental results indicated that the buffer layer material, deposition method, and thickness play a key role in regulating the CNT layer growth/structure, leading to variable mechanical and thermal properties. The fundamental understanding thus obtained allows the successful synthesis of VACNT on copper substrates with desired structure and properties.

Finite element modelling has been used to optimise the current/ voltage (I/V) characteristics of metal/ n-SiC and metal/ n-Si diodes incorporating a thin interfacial layer. The electrical properties of the diodes have been examined in relation to the polytype of SiC (3H, 4H or 6C), the doping level, NA, (1015 - 1018cm3) of the substrate, the defect state density, Dit and the work function of the Schottky metal, Φm. The modelling by Technology Computer-Aided Design (TCAD) has shown that the presence of an interfacial insulating layer with a thickness of 1.0 nm has reduced the reverse leakage current of the diode by a factor of ∼102 in Si and 1013 (from 10-19 A to 10-6 A) for SiC with only a minor reduction (∼ 0.8 times) in the forward current in SiC. The properties of the diodes have been modelled at room temperature without thermal annealing.

Perovskite based photovoltaics have recently emerged as the forerunner in the next generation photovoltaic technology because of the rapid increase of power conversion efficiency (PCE). However, it is well recognized that the exposure to moisture, heat and light causes the degradation of perovskite [1] (especially for methylammonium lead iodide (CH3NH3PbI3) which is the most commonly used perovskite material). It makes stability a main issue for the commercialization of perovskite based photovoltaics. Hence, an advanced encapsulation method is one of the keys to improve the stability. Here we present a comparison study between different encapsulation methods. Perovskite based photovoltaics devices were encapsulated using UV epoxy resin, with or without the addition of desiccant and the deposition of SiO2 layer. By minimizing the ingress of moisture and oxygen, devices with storage in ambient air under one sun continuous illumination could retain 94 % of the initial performance (PCE around 13%) after two days.

In order to integrate porous dielectric materials into the next generation of Cu/low-k interconnect, the porous material has to be sealed against metal barrier precursor. We have reported pore sealants which forms ultra-thin (< 3 nm-thick) layer on top of the surface of porous low-k film while the pore sealant does not diffuse into pores. In this study, it was investigated how pore seal layer is formed on the surface of porous material and how pore mouths are sealed by pore seal layer. It was found that 1) thickness of the pore seal layer is well-controlled in the range < 5 nm, by varying spin rate and concentration of solid, 2) minimal thicknesses of the pore seal layer needed to achieve an efficient sealing for porous low-k films whose pore radius is 1.5 nm was 2.6 nm. 3) Larger pores, whose pore radius is 4.2 nm, were sealed completely with an expansion of our technology.